Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires


Autoria(s): Li, Zhen; Du, Ai Jun; Sun, Qiao; Aljada, Muhsen; Zhu, Zhong Hua; Lu, Gao Qing (Max)
Data(s)

2012

Resumo

Field-effect transistors (FETs) fabricated from undoped and Co2+-doped CdSe colloidal nanowires show typical n-channel transistor behaviour with gate effect. Exposed to microscope light, a 10 times current enhancement is observed in the doped nanowire-based devices due to the significant modification of the electronic structure of CdSe nanowires induced by Co2+-doping, which is revealed by theoretical calculations from spin-polarized plane-wave density functional theory.

Identificador

http://eprints.qut.edu.au/60120/

Publicador

Royal Society of Chemistry

Relação

DOI:10.1039/c2nr11627h

Li, Zhen, Du, Ai Jun, Sun, Qiao, Aljada, Muhsen, Zhu, Zhong Hua, & Lu, Gao Qing (Max) (2012) Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires. Nanoscale, 4(4), p. 1263.

Fonte

Science & Engineering Faculty

Tipo

Journal Article