Pt/SnO2 nanowires/SiC based hydrogen gas sensor
| Contribuinte(s) |
Mizaikoff, Boris |
|---|---|
| Data(s) |
2007
|
| Resumo |
Pt/SnO2 nanowires/SiC based metal-oxidesemiconductor (MOS) devices were fabricated and tested for their gas sensitivity towards hydrogen. Tin oxide (SnO2) nanowires were grown on SiC substrates by the vapour liquid solid growth process. The material properties of the SnO2 nanowires such as its formation and dimensions were analyzed using scanning electron microscopy (SEM). The currentvoltage (I-V) characteristics at different hydrogen concentrations are presented. The effective change in the barrier height for 0.06 and 1% hydrogen were found to be 20.78 and 131.59 meV, respectively. A voltage shift of 310 mV at 530°C for 1% hydrogen was measured. |
| Formato |
application/pdf |
| Identificador | |
| Publicador |
IEEE |
| Relação |
http://eprints.qut.edu.au/59629/1/IEEE_Sensors_2007_M_Shafiei.pdf http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4388362 Shafiei, M., Wlodarski, W., Kalantar-zadeh, K., Comini, E., Bianchi, S, & Sberveglieri, G. (2007) Pt/SnO2 nanowires/SiC based hydrogen gas sensor. In Mizaikoff, Boris (Ed.) Proceedings of the IEEE SENSORS 2007 Conference, IEEE, Atlanta, Georgia, USA , pp. 166-169. |
| Direitos |
© 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from IEEE. |
| Fonte |
Science & Engineering Faculty |
| Palavras-Chave | #030107 Sensor Technology (Chemical aspects) #100708 Nanomaterials #100712 Nanoscale Characterisation |
| Tipo |
Conference Paper |
