A study of hydrogen gas sensing performance of Pt/Graphene/GaN devices
| Contribuinte(s) |
Lewis, Elfred |
|---|---|
| Data(s) |
2011
|
| Resumo |
In this work, we present an investigation on Pt/graphene/GaN devices for hydrogen gas sensing applications. The graphene layer was deposited on GaN substrate using a chemical vapour deposition (CVD) technique and was characterised via Raman and X-ray photoelectron spectroscopy. The current-voltage (I-V) and dynamic response of the developed devices were investigated in forward and reverse bias operation at an optimum temperature of 160°C. Voltage shifts of 661.1 and 484.9 mV were recorded towards 1% hydrogen at forward and reverse constant bias current of 1 mA, respectively. |
| Formato |
application/pdf |
| Identificador | |
| Publicador |
IEEE |
| Relação |
http://eprints.qut.edu.au/59563/1/Yu_2011_published_paper.pdf http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06126969 Yu, J., Shafiei, M., Ou, J., Shin, K., & Wlodarski, W. (2011) A study of hydrogen gas sensing performance of Pt/Graphene/GaN devices. In Lewis, Elfred (Ed.) Proceedings of the IEEE SENSORS 2011 Conference, IEEE, Limerick, Ireland, pp. 1017-1020. |
| Direitos |
© 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| Fonte |
School of Chemistry, Physics & Mechanical Engineering; Science & Engineering Faculty |
| Palavras-Chave | #030107 Sensor Technology (Chemical aspects) #100708 Nanomaterials #100712 Nanoscale Characterisation |
| Tipo |
Conference Paper |
