Hydrogen gas sensors based on thermally evaporated nanostructured MoO3 Schottky diode : a comparative study
Contribuinte(s) |
Lewis, Elfred |
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Data(s) |
2011
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Resumo |
In this paper, a comparative study of Pt/nanostructured MoO3/SiC Schottky diode based hydrogen gas sensors is presented. MoO3 nanostructured films with three different morphologies (nanoplatelets, nanoplateletsnanowires and nano-flowers) were deposited on SiC by thermal evaporation. We compare the current-voltage characteristics and the dynamic response of these sensors as they are exposed to hydrogen gas at temperatures up to 250°C. Results indicate that the sensor based on MoO3 nanoflowers exhibited the highest sensitivity (in terms of a 5.79V voltage shift) towards 1% hydrogen; while the sensor based on MoO3 nanoplatelets showed the quickest response (t90%- 40s). |
Formato |
application/pdf |
Identificador | |
Publicador |
IEEE |
Relação |
http://eprints.qut.edu.au/59558/1/IEEE_Sensors_2011_M_Shafiei-Paper_ID-_1139.pdf DOI:10.1109/ICSENS.2011.6126970 Shafiei, M., Yu, J., Motta, N., Wu, Q., Hu, Z., Qian, L., Kalantar-zadeh, K., & Wlodarski, W. (2011) Hydrogen gas sensors based on thermally evaporated nanostructured MoO3 Schottky diode : a comparative study. In Lewis, Elfred (Ed.) Proceedings of the IEEE SENSORS 2011 Conference, IEEE, University of Limerick, Limerick, Ireland, pp. 8-11. |
Direitos |
Copyright 2011 Institute of Electrical and Electronics Engineers, Inc. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to use any copyrighted component of this work in other works must be obtained from the IEEE. |
Fonte |
School of Chemistry, Physics & Mechanical Engineering; Science & Engineering Faculty |
Palavras-Chave | #030107 Sensor Technology (Chemical aspects) #100708 Nanomaterials #100712 Nanoscale Characterisation |
Tipo |
Conference Paper |