The correlation between electric field emission phenomenon and Schottky contact reverse bias characteristics in nanostructured systems
Data(s) |
13/06/2011
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Resumo |
Two different morphologies of nanotextured molybdenum oxide were deposited by thermal evaporation. By measuring their field emission (FE) properties, an enhancement factor was extracted. Subsequently, these films were coated with a thin layer of Pt to form Schottky contacts. The current-voltage (I-V) characteristics showed low magnitude reverse breakdown voltages, which we attributed to the localized electric field enhancement. An enhancement factor was obtained from the I-V curves. We will show that the enhancement factor extracted from the I-V curves is in good agreement with the enhancement factor extracted from the FE measurements. |
Identificador | |
Publicador |
IEEE |
Relação |
DOI:10.1063/1.3583658 Yu, J., Liu, J., Breedon, M., Shafiei, M., Wen, H., Li, Y.X., Wlodarski, W., Zhang, G., & Kalantar-zadeh, K. (2011) The correlation between electric field emission phenomenon and Schottky contact reverse bias characteristics in nanostructured systems. Journal of Applied Physics, 109(11), p. 114316. |
Fonte |
School of Chemistry, Physics & Mechanical Engineering; Science & Engineering Faculty |
Palavras-Chave | #030107 Sensor Technology (Chemical aspects) #100708 Nanomaterials #100712 Nanoscale Characterisation |
Tipo |
Journal Article |