Chemical vapor deposited boron carbide : growth by a vapor-liquid-solid process


Autoria(s): Mackinnon, I.D.R.; Smith, K.L.
Contribuinte(s)

Aselage, T.

Emin, D.

Wood, C.

Data(s)

01/01/1987

Resumo

Detailed analytical electron microscope (AEM) studies of yellow whiskers produced by chemical vapor deposition (CVD)1 show that two basic types of whiskers are produced at low temperatures (between 1200°C and 1400°C) and low boron to carbon gas ratios. Both whisker types show planar microstructures such as twin planes and stacking faults oriented parallel to, or at a rhombohedral angle to, the growth direction. For both whisker types, the presence of droplet-like terminations containing both Si and Ni indicate that the growth process during CVD is via a vapor-liquid-solid (VLS) mechanism.

Identificador

http://eprints.qut.edu.au/57614/

Publicador

Cambridge University Press

Relação

DOI:10.1557/PROC-97-127

Mackinnon, I.D.R. & Smith, K.L. (1987) Chemical vapor deposited boron carbide : growth by a vapor-liquid-solid process. In Aselage, T., Emin, D., & Wood, C. (Eds.) Novel Refractory Semiconductors, Cambridge University Press, Anaheim, CA, pp. 127-132.

Fonte

Institute for Future Environments

Palavras-Chave #091201 Ceramics #091203 Compound Semiconductors #boron carbide whiskers #chemical vapour deposition #VLS growth #trace metals #droplet termination #Silicon #Nickel
Tipo

Conference Paper