Chemical vapor deposited boron carbide : growth by a vapor-liquid-solid process
Contribuinte(s) |
Aselage, T. Emin, D. Wood, C. |
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Data(s) |
01/01/1987
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Resumo |
Detailed analytical electron microscope (AEM) studies of yellow whiskers produced by chemical vapor deposition (CVD)1 show that two basic types of whiskers are produced at low temperatures (between 1200°C and 1400°C) and low boron to carbon gas ratios. Both whisker types show planar microstructures such as twin planes and stacking faults oriented parallel to, or at a rhombohedral angle to, the growth direction. For both whisker types, the presence of droplet-like terminations containing both Si and Ni indicate that the growth process during CVD is via a vapor-liquid-solid (VLS) mechanism. |
Identificador | |
Publicador |
Cambridge University Press |
Relação |
DOI:10.1557/PROC-97-127 Mackinnon, I.D.R. & Smith, K.L. (1987) Chemical vapor deposited boron carbide : growth by a vapor-liquid-solid process. In Aselage, T., Emin, D., & Wood, C. (Eds.) Novel Refractory Semiconductors, Cambridge University Press, Anaheim, CA, pp. 127-132. |
Fonte |
Institute for Future Environments |
Palavras-Chave | #091201 Ceramics #091203 Compound Semiconductors #boron carbide whiskers #chemical vapour deposition #VLS growth #trace metals #droplet termination #Silicon #Nickel |
Tipo |
Conference Paper |