A hydrogen gas sensor based on Pt/nanostructured WO3/SiC Schottky diode
Data(s) |
01/02/2011
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Resumo |
Pt/nanostructured WO3/SiC Schottky diodes were fabricated and applied for hydrogen gas sensing applications. The nanostructured WO3 films were synthesized from tungsten coated SiC substrates via an acid-etching method using a 1.5 M HNO3 solution for 1 hr, 2 hrs and 3 hrs duration. Scanning electron microscopy of the developed films revealed platelet crystals with thicknesses in the order of 20-60 nm and lengths between 100-700 nm. X-ray diffraction analysis revealed that the rate of oxidation of tungsten increases as the duration of acid-etching increases. The devices were tested towards hydrogen gas balanced in air at different temperatures from 25°C to 200°C. At 200°C, voltage shifts of 0.45 V, 0.93 V and 2.37 V were recorded for devices acid-etched for 1 hr, 2 hrs and 3 hrs duration, respectively upon exposure to 1% hydrogen, under a constant forward bias current of 500 µA. |
Formato |
application/pdf |
Identificador | |
Publicador |
American Scientific Publishers |
Relação |
http://eprints.qut.edu.au/46226/1/46226A.pdf DOI:10.1166/sl.2011.1409 Shafiei, Mahnaz, Sadek, Abu Z, Yu, Jerry, Latham, Kay, Breedon, Michael, McCulloch, Dougal, Kalantar-zadeh, Kourosh, & Wlodarski, Wojtek (2011) A hydrogen gas sensor based on Pt/nanostructured WO3/SiC Schottky diode. Sensor Letters, 9(1), pp. 11-15. |
Direitos |
Copyright 2011 Please consult the authors. |
Fonte |
Faculty of Built Environment and Engineering |
Palavras-Chave | #Nanostructured WO3 #Gas Sensors #Schottky Diode #Hydrogen #Acid-etching |
Tipo |
Journal Article |