Influence of Domain Boundaries on Polarity of GaN Grown on Sapphire


Autoria(s): Bell, John; Phillipp, F; Schroder, H; Zhou, Hao
Data(s)

2005

Identificador

http://eprints.qut.edu.au/23290/

Publicador

Elsevier BV

Relação

Bell, John, Phillipp, F, Schroder, H, & Zhou, Hao (2005) Influence of Domain Boundaries on Polarity of GaN Grown on Sapphire. Applied Surface Science, 252(2), pp. 483-487.

Fonte

Faculty of Built Environment and Engineering

Palavras-Chave #020406 Surfaces and Structural Properties of Condensed Matter #091299 Materials Engineering not elsewhere classified #Domain boundaries, Gallium Nitride, Film Growth
Tipo

Journal Article