How to achieve ultra high photoconductive gain for transparent oxide semiconductor image sensors

We present quantitative analysis of the ultra-high photoconductivity in amorphous oxide semiconductor (AOS) thin film transistors (TFTs), taking into account the sub-gap optical absorption in oxygen deficiency defects. We analyze the basis of photoconductivity in AOSs, explained in terms of the extended electron lifetime due to retarded recombination as a result of hole localization. Also, photoconductive gain in AOS photo-TFTs can be maximized by reducing the transit time associated with short channel lengths, making device scaling favourable for high sensitivity operation. © 2012 IEEE.

Electronic load interface for improving PV dual-converter system operational margin

An electronic load interface (ELI) for improving the operational margin of a photovoltaic (PV) dual-converter system under dynamic conditions is presented. The ELI - based on a modified buck-boost converter - interfaces the output of the converters and the load system. It improves the operational margin of the PV dual-converter system by extending the conditions under which the dual-converter system operates at the maximum power point. The ELI is activated as and when needed, so as minimise system losses. By employing the ELI, utilisation and efficiency of a PV dual-converter system increases. In general, the concept of the ELI can be applied to multi-converter PV systems - such as multi-converter inverters, and multi-converter DC-DC converter systems - for performance and efficiency improvement. © 2013 The Institution of Engineering and Technology.

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.

We have performed a comparative study of ultrafast charge carrier dynamics in a range of III-V nanowires using optical pump-terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm² V⁻¹ s⁻¹, which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s⁻¹. This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10⁵ cm s⁻¹. These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices.

Fast O2 measurement using modified UEGO sensors in the intake and exhaust of a diesel engine

Recent work has investigated the use of O2 concentration in the intake manifold as a control variable for diesel engines. It has been recognised as a very good indicator of NOX emissions especially during transient operation, however, much of the work is concentrated on estimating the O2 concentration as opposed to measuring it. This work investigates Universal Exhaust Gas Oxygen (UEGO) sensors and their potential to be used for such measurements. In previous work it was shown that these sensors can be operated in a controlled pressure environment such that their response time is of the order 10ms. In this paper, it is shown how the key causes of variation (and therefore potential sources of error) in sensor output, namely, pressure and temperature are largely mitigated by operating the sensors in such an environment. Experiments were undertaken on a representative light duty diesel engine using modified UEGO sensors in the intake and exhaust system. Results from other fast emissions measuring equipment are also shown and it is seen that the UEGO sensors are capable of giving an accurate measurement of O2 and EGR. Copyright © 2013 SAE International.

Sensors based on SAW and FBAR technologies

Over the last few years a number of sensing platforms are being investigated for their use in drug development, microanalysis or medical diagnosis. Lab-on-a-chip (LOC) are devices integrating more than one laboratory functions on a single device chip of a very small size, and typically consist of two main components: microfluidic handling systems and sensors. The physical mechanisms that are generally used for microfluidics and sensors are different, hence making the integration of these components difficult and costly. In this work we present a lab-on-a-chip system based on surface acoustic waves (for fluid manipulation) and film bulk acoustic resonators (for sensing). Coupling surface acoustic waves into liquids induces acoustic streaming and motion of micro-droplets, whilst it is well-known that bulk acoustic waves can be used to fabricate microgravimetric sensors. Both technologies offer exceptional sensitivity and can be fabricated from piezoelectric thin films deposited on Si substrates, reducing the fabrication time/cost of the LOC devices. © 2013 SPIE.

A single FBAR-based temperature and pressure sensors

A novel temperature and pressure sensor based on a single film bulk acoustic resonator (FBAR) is designed. This FBAR support two resonant modes, which response opposite to the change of temperature. By sealed the back cavity of a back-trench membrane type FBAR with silicon wafer, an on-chip single FBAR sensor suitable for measuring temperature and pressure simultaneously is proposed. For unsealed device, the experimental results show that the first resonant mode has a temperature coefficient of frequency (TCF) of 69.5ppm/K, and the TCF of the second mode is -8.1ppm/K. After sealed the back trench, it can be used as a pressure sensor, the pressure coefficient of frequency (PCF) for the two resonant mode is -17.4ppm/kPa and -6.1 ppm/kPa respectively, both of them being more sensitive than other existing pressure sensors. © 2013 Trans Tech Publications Ltd, Switzerland.

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.