990 resultados para Zero-current-switching


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This paper presents a new family of pulsewidth-modulated (PWM) converters, featuring soft commutation of the semiconductors at zero current (ZC) in the transistors and zero voltage (ZV) in the rectifiers, Besides operating at constant frequency and with reduced commutation losses, these new converters have output characteristics similar to the hard-switching-PWM counterpart, which means that there is no circulating reactive energy that would cause large conduction losses, the new family of zero-current-switching (ZCS)-PWM converters is suitable for high-power applications using insulated gate bipolar transistors (IGBT's). The advantages of the new ZCS-PWM boast converter employing IGBT's, rated at 1.6 kW and operating at 20 kHz, are presented, This new ZCS operation can reduce the average total power dissipation in the semiconductors practically by half, when compared with the hard-switching method, This new ZCS-PWM boost converter is suitable for high-power applications using Ie;BT's in power-factor correction, the principle of operation, theoretical analysis, and experimental results of the new ZCS-PWM boost converter are provided in this paper to verify the performance of this new family of converters.

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A new family of dc-to-dc pulse-width-modulated (PWM) converters is presented. These converters feature soft-commutation at zero-current (ZC) in the active switches. The new ZCS-PWM Boost and new ZCS-PWM Zeta converters, both based on the new ZCS-PWM soft-commutation cell proposed, are used as examples to illustrate the operation of the new family of converters.

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A new family of direct current (DC) to DC converters based on a zero current switching pulse width modulated (ZCS-PWM) soft commutation cell is presented. This ZCS-PWM cell is consists of two transistors, two diodes, two inductors and one capacitor; and provides zero voltage turn-on to the diodes, a zero-current turn-on and a zero-current zero-voltage turn-off to the transistors. In addition, a new commutation cell in a new ZCS-PWM boost rectifier is developed, obtaining a structure with power factor near the unity, high efficiency at wide load range and low total harmonic distortion in the input current.

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An analysis of a modified series-L/parallel-tuned Class-E power amplifier is presented, which includes the effects that a shunt capacitance placed across the switching device will have on Class-E behaviour. In the original series L/parallel-tuned topology in which the output transistor capacitance is not inherently included in the circuit, zero-current switching (ZCS) and zero-current derivative switching (ZCDS) conditions should be applied to obtain optimum Class-E operation. On the other hand, when the output transistor capacitance is incorporated in the circuit, i.e. in the modified series-L/parallel-tuned topology, the ZCS and ZCDS would not give optimum operation and therefore zero-voltage-switching (ZVS) and zero-voltage-derivative switching (ZVDS) conditions should be applied instead. In the modified series-L/parallel-tuned Class-E configuration, the output-device inductance and the output-device output capacitance, both of which can significantly affect the amplifier's performance at microwave frequencies, furnish part, if not all, of the series inductance L and the shunt capacitance COUT, respectively. Further, when compared with the classic shunt-C/series-tuned topology, the proposed Class-E configuration offers some advantages in terms of 44% higher maximum operating frequency (fMAX) and 4% higher power-output capability (PMAX). As in the classic topology, the fMAX of the proposed amplifier circuit is reached when the output-device output capacitance furnishes all of the capacitance COUT, for a given combination of frequency, output power and DC supply voltage. It is also shown that numerical simulations agree well with theoretical predictions.

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A switching control strategy is proposed for current-fed half-bridge converters. An active switch based voltage doubler circuit at the secondary side of the isolation transformer is used to obtain zero-current-switching at turn-off and zero-voltage-switching at turn-on in the primary side switches of the current-fed half-bridge converter. The operation of the current-fed half-bridge converter with the proposed switching control strategy is explained using the equivalent circuit during each sub-interval of operation. The operation of the current-fed halfbridge converter is simulated using MATLAB/Simpower and PSIM to verify the feasibility of the switching control strategy. Experimental results are provided to validate the converter's operation.

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A switching control strategy is proposed for single inductor current-fed push-pull converter with a secondary side active voltage doubler rectifier or a voltage rectifier used in photovoltaic (PV) grid interfacing. The proposed switching control strategy helps to turn-on and turn-off the primary side power switches with zero-voltage and zero-current switching. The operation of the push-pull converter is analyzed for two modes of operation. The feasibility of the proposed switching control strategy is validated using simulation and experimental results.

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A switching control strategy is proposed for single and dual inductor current-fed push-pull converters. The proposed switching control strategy can be used with both current-fed push-pull converters with an active voltage doubler rectifier, or active rectifier, in the secondary side of the isolation transformer. The proposed switching control strategy makes turn-on and turn-off processes of the primary side power switches zero-voltage-switching and zero-current-switching respectively. The soft-switching operation of the single and dual inductor push-pull converters, with both types of active rectifier, is explained. Simulation and experimental results are provided to validate soft switching operation of the current-fed push-pull converters with the proposed switching control strategy.

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The phase shift full bridge (PSFB) converter allows high efficiency power conversion at high frequencies through zero voltage switching (ZVS); the parasitic drain-to-source capacitance of the MOSFET is discharged by a resonant inductance before the switch is gated resulting in near zero turn-on switching losses. Typically, an extra inductance is added to the leakage inductance of a transformer to form the resonant inductance necessary to charge and discharge the parasitic capacitances of the PSFB converter. However, many PSFB models do not consider the effects of the magnetizing inductance or dead-time in selecting the resonant inductance required to achieve ZVS. The choice of resonant inductance is crucial to the ZVS operation of the PSFB converter. Incorrectly sized resonant inductance will not achieve ZVS or will limit the load regulation ability of the converter. This paper presents a unique and accurate equation for calculating the resonant inductance required to achieve ZVS over a wide load range incorporating the effects of the magnetizing inductance and dead-time. The derived equations are validated against PSPICE simulations of a PSFB converter and extensive hardware experimentations.

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This new and general method here called overflow current switching allows a fast, continuous, and smooth transition between scales in wide-range current measurement systems, like electrometers. This is achieved, using a hydraulic analogy, by diverting only the overflow current, such that no slow element is forced to change its state during the switching. As a result, this approach practically eliminates the long dead time in low-current (picoamperes) switching. Similar to a logarithmic scale, a composition of n adjacent linear scales, like a segmented ruler, measures the current. The use of a linear wide-range system based on this technique assures fast and continuous measurement in the entire range, without blind regions during transitions and still holding suitable accuracy for many applications. A full mathematical development of the method is given. Several computer realistic simulations demonstrated the viability of the technique.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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This paper proposes a novel modulation strategy for a phase controlled Capacitor-Inductor-Capacitor (CLC) Resonant Dual Active Bridge (RDAB). The proposed modulation strategy improves the soft turn-on, Zero-Current-Switching (ZCS) and Zero-Voltage-Switching (ZVS) range of the converter while only minimally increasing the required reactive currents in the ac link. A mathematical analysis of the proposed modulation scheme is presented along with a theoretical loss comparison between several modulation strategies. The proposed modulation strategy was implemented and the experimental results are presented.

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The first analysis and synthesis equations for the newly introduced inverse Class-E amplifier when operated with a finite d.c. blocking capacitance and a finite d.c.-feed inductance are presented in the paper. Closed-form design equations are derived in order to establish the circuit component values required for optimum synthesis. Excellent agreement between numerical simulation results and theoretical prediction is obtained. It is shown that drain efficiency approaching 100 at a pre-specified output power level can be achieved as zero-current switching and zero-current derivative conditions are simultaneously satisfied. The proposed analysis offers the prospect for realistic MMIC implementation.