Kinetics of picosecond laser pulse induced charge separation and proton transfer in bacteriorhodopsin

Bacteriorhodopsin (BR) films oriented by an electrophoretic method are deposited on a transparent conductive ITO glass. A counterelectrode of copper and gelose gel is used to compose a sandwich-type photodetector with the structure of ITO/BR film/gelose gel/Cu. A single 30-ps laser pulse and a mode-locked pulse train are respectively used to excite the BR photodetector. The ultrafast failing edge and the bipolar response signal are measured by the digital oscilloscope under seven different time ranges. Marquardt nonlinear least squares fitting is used to fit all the experimental data and a good fitting equation is found to describe the kinetic process of the photoelectric signal. Data fitting resolves six exponential components that can be assigned to a seven-step BR photocycle model: BR-->K-->KL-->L-->M-->N-->O-->BR. Comparing tests of the BR photodetector with a 100-ps Si PIN photodiode demonstrates that this type of BIR photocletector has at least 100-ps response time and can also serve as a fast photoelectric switch. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

一种新型的5GHz自适应偏置及可变增益低噪声放大器

该文提出了一种新型的自适应偏置及可变增益低噪声放大器（LNA），利用电荷泵（亦称电压倍增器）将LNA输出信号转换成与LNA射频输入信号功率成比例变化的直流信号，以此信号同时反馈控制LNA的偏置和增益，来实现自适应偏置以及可变增益低噪声放大器。从而极大地改善了LNA的输入线性范围。鉴于5GHz频率下，Bipolar相对于CMOS更好的频率特性和低噪声特性，该项研究采用了BiCMOS工艺，实现了低于3．0dB的噪声系数（高增益状态下）和大约13dBm的输入三阶交调点ⅡP3的控制范围以及大于15dB的增益控制范围。

High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD

The high temperature (300～480K) characteristics of the n-3C-SiC/p-Si heterojunction diodes (HJD) fabricated by low-pressure chemical vapor deposition on Si (100) substrates are investigated.The obtained diode with best rectifying properties has 1.8×104 of ratio at room temperature,and slightly rectifying characteristics with 3.1 of rectification ratio is measured at 480K of an ambient temperature .220V of reverse breakdown voltage is acquired at 300K.Capacitance-voltage characteristics show that the abrupt junction model is applicable to the SiC/Si HJD structure and the built-in voltage is 0.75V.An ingenious equation is employed to perfectly simulate and explain the forward current density-voltage data measured at various temperatures.The 3C-SiC/Si HJD represents a promising approach for the fabrication of high quality heterojunction devices such as SiC-emitter heterojunction bipolar transistors.

Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)

Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown on φ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD). The initial stage of carbonization and the surface morphology of carbonization layers of Si(100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM). It is shown that the optimized carbonization temperature for the growth of voids-free 3S-SiC on Si (100) substrates is 1100 ℃. The electrical properties of SiC layers are characterized using Van der Pauw method. The I-V, C-V, and the temperature dependence of I-V characteristics in n-3C-SiC-p-Si heterojunctions with AuGeNi and Al electrical pads are investigated. It is shown that the maximum reverse breakdown voltage of the n-3C-SiC-p-Si heterojunction diodes reaches to 220V at room temperature. These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).

An analysis of the performance of a new high-speed single-way analog switch

This paper introduces a new highspeed single-way analog switch which has both highspeed high-resolution mono-direction analog transmission gate function and high-speed digital logic gate function with normal bipolar technology. The analysis of static and transient switching performances as an analog transmission gate is emphasized in the paper. In order to reduce the plug-in effect on high-speed high-resolution systems, an optimum design scheme is also given. This scheme is to achieve accelerated dynamic response with very low bias power dissipation. The analysis of PSPICE simulation as well as the circuit test results confirms the feasibility of the scheme. Now, the circuit has been applied effectively to the designs of novel highspeed A/D and D/A converters.

Bridged triphenylamines as novel host materials for highly efficient blue and green phosphorescent OLEDs

Two bridged triphenylamine-triphenylsilane (BTPASi) hybrids have been designed as host materials for phosphorescent OLEDs; devices with the novel host materials achieve maximum external quantum efficiencies as high as 15.4% for blue and 19.7% for green electrophosphorescence.

Novel Oligo-9,9 '-spirobifluorenes through ortho-Linkage as Full Hydrocarbon Host for Highly Efficient Phosphorescent OLEDs

4-Bromo-9,9'-spirobifluorene is facilely synthesized, and from this precursor, two ortho-linked oligo-9,9'-spirobifluorenes, 44BSF and 24TSF, are constructed. Devices with 24TSF as the full-hydrocarbon host material and Ir(ppy)(3) or (ppq)(2)Ir(acac) as the triplet emitter show maximum external quantum efficiencies of 12.6 and 10.5% for green and red electrophosphorescence, respectively.