Probing the antisymmetric Fano interference assisted by a Majorana fermion

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Hybridization effects on the out-of-plane electron tunneling properties of monolayers: is h-BN more conductive than graphene?

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Crescimento epitaxial e caracterização de filmes finos: óxidos condutores e ferroelétricos preparados por deposição de solução química

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Raman and XRD study on brookite-anatase coexistence in cathodic electrosynthesized titania

Among the many methods developed for the synthesis of titanium dioxide, cathodic electrosynthesis has not received much attention because the resulting amorphous oxy-hydroxide matrix demands a further thermal annealing step to be transformed into crystalline titania. However, the possibility of filling deep recessed templates by the control of the solidliquid interface makes it a potentially suitable technique for the fabrication of porous scaffolds for photovoltaics and photocatalysis. Furthermore, a careful control of the crystallization process enables the growth of larger grains with lower density of grain boundaries, which act as electron traps that slow down electronic transport and promote charge recombination. In this report, well crystallized titania deposits were obtained by thermal annealing of amorphous deposits fabricated by cathodically assisted electrosynthesis on indium-tin oxide (ITO)substrates. The combined use of Raman spectroscopy and X-ray diffraction showed that the crystallization process is more intricate than previously assumed. It is shown that the amorphous matrix evolves into a rutile-free mixture of brookite and anatase at temperatures as low as 200 degrees C that persists up to 800 degrees C, when pure anatase dominates. The amount of brookite in the brookiteanatase mixture reaches a maximum at 400 degrees C. This very simple method for obtaining a brookiteanatase mixture and the ability to tune their proportions by thermal annealing is a promising alternative whose potential for solar cells and photocatalysis deserves a careful evaluation. Copyright (C) 2011 John Wiley & Sons, Ltd.

Light emission and current rectification in a molecular device: Experiment and theory

We have investigated optical and transport properties of the molecular structure 2,3,4,5-tetraphenyl-1-phenylethynyl-cyclopenta-2,4-dienol experimentally and theoretically. The optical spectrum was calculated using Hartree-Fock-intermediate neglect of differential overlap-configuration interaction model. The experimental photoluminescence spectrum showed a peak around 470nm which was very well described by the modeling. Electronic transport measurements showed a diode-like effect with a strong current rectification. A phenomenological microscopic model based on non-equilibrium Green's function technique was proposed and a very good description electronic transport was obtained. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767457]

Ab-initio calculations for a realistic sensor: A study of CO sensors based on nitrogen-rich carbon nanotubes

The use of nanoscale low-dimensional systems could boost the sensitivity of gas sensors. In this work we simulate a nanoscopic sensor based on carbon nanotubes with a large number of binding sites using ab initio density functional electronic structure calculations coupled to the Non-Equilibrium Green's Function formalism. We present a recipe where the adsorption process is studied followed by conductance calculations of a single defect system and of more realistic disordered system considering different coverages of molecules as one would expect experimentally. We found that the sensitivity of the disordered system is enhanced by a factor of 5 when compared to the single defect one. Finally, our results from the atomistic electronic transport are used as input to a simple model that connects them to experimental parameters such as temperature and partial gas pressure, providing a procedure for simulating a realistic nanoscopic gas sensor. Using this methodology we show that nitrogen-rich carbon nanotubes could work at room temperature with extremely high sensitivity. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4739280]

Darstellung und Untersuchung von Materialien mit negativem Magnetowiderstand

Mit dem System KCo2-xCuxS2 wurde ein neues magnetoresistives System gefunden. Der negative Magnetowiderstand ist mit der Größenordnung von 10 % in 8 Tesla bei 4 K klein im Vergleich zu Mangan-Perowskiten, jedoch eindeutig intrinsisch.Die magnetische Struktur des Thiospinells Fe0.5Cu0.5Cr2S4 konnte durch Neutronenbeugung, Mößbauer-Spektroskopie sowie begleitende Bandstrukturrechnungen aufgeklärt werden. Ein negativen Magnetowiderstand von 5,5 % nahe der Curie-Temperatur in Magnetfeldern von 8 Tesla bei der isostrukturellen eisenreichen Verbindung Fe0.75Cu0.25Cr2S4 wurde gefunden.Die intermetallischen Verbindungen des Gadoliniums weisen alle hohe negative Magnetowiderstände bei TC auf. Sowohl bei GdAl2 als auch bei GdPdP und GdPtP werden Widerstandsabsenkungen in 8 Tesla beobachtet, die bei ~1,5 TC 4 % erreichen und bis zu Temperaturen von 5 K über 6 % liegen. Während der Transportmechanismus in GdAl2 offenbar auf einer direkten Gd-Gd Wechselwirkung beruht, ist bei GdPdP und GdPtP bei tiefen Temperaturen ein nicht eindeutiges Verhalten beobachtbar. Ein Einfluss von Fremdphasen kann jedoch ausgeschlossen werden.Unter den metallreichen Phosphiden hexagonaler Struktur zeigt Fe2P große negative MR-Effekte von 7 % schon bei Raumtemperatur in hohen Feldern. Nahe der ferromagnetischen Ordnung reagiert die Verbindung auf äußere Felder bei niedrigen Feldstärken von weniger als 2 Tesla mit einer Erhöhung der Leitfähigkeit um 10 bis 11 %.

Pinning-Effekte kolumnarer Schwerionenspuren in Kuprat-Supraleiter-Dünnschichten

In this work the flux line dynamics in High-Temperature Superconductor (HTSC) thin films in the presence of columnar defects was studied using electronic transport measurements. The columnar defects which are correlated pinning centers for vortices were generated by irradiation with swift heavy ions at the Gesellschaft für Schwerionenforschung (GSI) in Darmstadt. In the first part, the vortex dynamics is discussed within the framework of the Bose-glass model. This approach describes the continuous transition from a vortex liquid to a Bose-glass phase which is characterized by the localization of the flux lines at the columnar defects. The critical behavior of the characteristic length and time scales for temperatures in the vicinity of this phase transition were probed by scaling properties of experimentally obtained current-voltage characteristics. In contrast to the predicted universal properties of the critical behavior the scaling analysis shows a strong dependence of the dynamic critical exponent on the experimentally accessible electric field range. In addition, the predicted divergence of the activation energy in the limit of low current densities was experimentally not confirmed.The dynamic behavior of flux lines in spatially resolved irradiation geometries is reported in the second part. Weak pinning channels with widths between 10 µm and 100 µm were generated in a strong pinning environment with the use of metal masks and the GSI microprobe, respectively. Measurements of the anisotropic transport properties of these structures show a striking resemblance to the results in YBCO single crystals with unidirected twin boundaries which were interpreted as a guided vortex motion effect. The use of two additional test bridges allowed to determine in parallel the resistivities of the irradiated and unirradiated parts as well as the respective current-voltage characteristics. These measurements provided the input parameters for a numerical simulation of the potential distribution in the spatially resolved irradiation geometry. The results are interpreted within a model that describes the hydrodynamic interaction between a Bose-glass phase and a vortex liquid. The interface between weakly pinned flux lines in the unirradiated channels and strongly pinned vortices leads to a nonuniform vortex velocity profile and therefore a variation of the local electric field. The length scale of these interactions was estimated for the first time in measuring the local variation of the electric field profile in a Bose-glass contact.Finally, a method for the determination of the true temperature in HTSC thin films at high dissipation levels is described. In this regime of electronic transport the occurrence of a flux flow instability is accompanied by heating effects in the vortex system. The heat propagation properties of the film/substrate system are deduced from the time dependent voltage response to a short high current density pulse of rectangular shape. The influence of heavy ion irradiation on the heat resistance at the film/substrate interface is studied.

Wachstum und Transporteigenschaften dünner Co-basierter Heusler-Filme

For the advancement of spinelectronicsmuch importance is attached to Heusler compounds. Especially compounds with the stoichiometry Co2YZ are supposed to exhibit a large asymmetry between majority and minority electrons at the Fermi edge. Ideally, only majority states are present. This property leads to high magnetoresistive effects. However, the experimental results available at present fall behind the expectations. In particular, a strong reduction of the spin asymmetry with increasing temperature is problematic. For this reason,rnthe investigation of further representatives of this material class as well as optimization of their deposition is required. Therefore, during the course of this work thin Heusler films with the composition Co2Cr0.6Fe0.4Al and Co2Mn1−xFexSi were fabricated. At first, this was accomplished by sputter deposition, which is the standard technique for the preparation of thin Heuslerrnfilms. It resulted also here in samples with high structural order. On the other hand, these films exhibit only a reduced magnetic moment. To improve this situation, a laser ablation system was constructed. The resulting film deposition under ultra-high vacuum led to a clear improvement especially of the magnetic properties. In addition to the improved deposition conditions, this method allowed the flexible variation of the film stoichiometry as well. This possibility was successfully demonstrated in this work by deposition of epitaxial Co2Mn1−xFexSi films. The availableness of these high quality quaternary alloys allowed the systematic investigation of their electronic properties. Band structure calculations predict that the substitution of Mn by Fe lead to a shift of the Fermi energy over the minority energy gap, whereas the density of states remains nearly unchanged. This prediction could by tested by electronic transport measurements. Especially the normal Hall effect, which was measured at these samples, shows a transition from a hole-like charge transport in Co2MnSi to an electron-like transport in Co2FeSi. This is in accordance with corresponding band structure calculations as well as with comparative XMCD experiments. Furthermore, the behavior of the anomalous Hall effect was studied. Here it could be seen, that the effect is influenced by two mechanisms: On the one hand an intrinsic contribution, caused by the topology of the Fermi surface and on the other hand by temperature dependent impurity scattering. These two effects have an opposing influence on the anomalous Hall effect. This can lead to a sign reversal of the anomalous contribution. This behavior has been predicted just recently and was here systematically investigated for the first time for Heusler compounds.

Single-Molecule Junctions Based on Nitrile-Terminated Biphenyls: A Promising New Anchoring Group

We present a combined experimental and theoretical study of the electronic transport through single-molecule junctions based on nitrile-terminated biphenyl derivatives. Using a scanning tunneling microscope-based break-junction technique, we show that the nitrile-terminated compounds give rise to well-defined peaks in the conductance histograms resulting from the high selectivity of the N-Au binding. Ab initio calculations have revealed that the transport takes place through the tail of the LUMO. Furthermore, we have found both theoretically and experimentally that the conductance of the molecular junctions is roughly proportional to the square of the cosine of the torsion angle between the two benzene rings of the biphenyl core, which demonstrates the robustness of this structure-conductance relationship.

Processing and characterization of PbSnTe-based thermoelectric materials made by mechanical alloying

The research reported in this dissertation investigates the processes required to mechanically alloy Pb1-xSnxTe and AgSbTe2 and a method of combining these two end compounds to result in (y)(AgSbTe2)–(1 - y)(Pb1-xSnxTe) thermoelectric materials for power generation applications. In general, traditional melt processing of these alloys has employed high purity materials that are subjected to time and energy intensive processes that result in highly functional material that is not easily reproducible. This research reports the development of mechanical alloying processes using commercially available 99.9% pure elemental powders in order to provide a basis for the economical production of highly functional thermoelectric materials. Though there have been reports of high and low ZT materials fabricated by both melt alloying and mechanical alloying, the processing-structure-properties-performance relationship connecting how the material is made to its resulting functionality is poorly understood. This is particularly true for mechanically alloyed material, motivating an effort to investigate bulk material within the (y)(AgSbTe2)–(1 - y)(Pb1-xSnx- Te) system using the mechanical alloying method. This research adds to the body of knowledge concerning the way in which mechanical alloying can be used to efficiently produce high ZT thermoelectric materials. The processes required to mechanically alloy elemental powders to form Pb1-xSnxTe and AgSbTe2 and to subsequently consolidate the alloyed powder is described. The composition, phases present in the alloy, volume percent, size and spacing of the phases are reported. The room temperature electronic transport properties of electrical conductivity, carrier concentration and carrier mobility are reported for each alloy and the effect of the presence of any secondary phase on the electronic transport properties is described. An mechanical mixing approach for incorporating the end compounds to result in (y)(AgSbTe2)–(1-y)(Pb1-xSnxTe) is described and when 5 vol.% AgSbTe2 was incorporated was found to form a solid solution with the Pb1-xSnxTe phase. An initial attempt to change the carrier concentration of the Pb1-xSnxTe phase was made by adding excess Te and found that the carrier density of the alloys in this work are not sensitive to excess Te. It has been demonstrated using the processing techniques reported in this research that this material system, when appropriately doped, has the potential to perform as highly functional thermoelectric material.

Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-nitride nanodetectors, white light emitters, and solar cells

III-nitride nanorods have attracted much scientific interest during the last decade because of their unique optical and electrical properties [1,2]. The high crystal quality and the absence of extended defects make them ideal candidates for the fabrication of high efficiency opto-electronic devices such as nano-photodetectors, light-emitting diodes, and solar cells [1-3]. Nitride nanorods are commonly grown in the self-assembled mode by plasma-assisted molecular beam epitaxy (MBE) [4]. However, self-assembled nanorods are characterized by inhomogeneous heights and diameters, which render the device processing very difficult and negatively affect the electronic transport properties of the final device. For this reason, the selective area growth (SAG) mode has been proposed, where the nanorods preferentially grow with high order on pre-defined sites on a pre-patterned substrate

E-beam nanopatterning for the selective area growth of III-V nitride nanorods

GaN/InGaN nanorods have attracted much scientific interest during the last decade because of their unique optical and electrical properties [1,2]. The high crystal quality and the absence of extended defects make them ideal candidates for the fabrication of high efficiency opto-electronic devices such as nano-photodetectors, light-emitting diodes, and solar cells [1-3]. Nitrides nanorods are commonly grown in the self-assembled mode by plasma-assisted molecular beam epitaxy (MBE) [4]. However, self-assembled nanorods are characterized by inhomogeneous heights and diameters, which render the device processing very difficult and negatively affect the electronic transport properties of the final device. For this reason, the selective area growth (SAG) mode has been proposed, where the nanorods preferentially grow on pre-defined sites on a pre-patterned substrate [5].

Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics

Thinning the absorber layer is one of the possibilities envisaged to further decrease the production costs of Cu(In,Ga)Se2 (CIGSe) thin films solar cell technology. In the present study, the electronic transport in submicron CIGSe-based devices has been investigated and compared to that of standard devices. It is observed that when the absorber is around 0.5 μm-thick, tunnelling enhanced interface recombination dominates, which harms cells energy conversion efficiency. It is also shown that by varying either the properties of the Mo back contact or the characteristics of 3-stage growth processing, one can shift the dominating recombination mechanism from interface to space charge region and thereby improve the cells efficiency. Discussions on these experimental facts led to the conclusions that 3-stage process implies the formation of a CIGSe/CIGSe homo-interface, whose location as well as properties rule the device operation; its influence is enhanced in submicron CIGSe based solar cells.

Fano-Rashba effect in quantum dots

We consider the electronic transport through a Rashba quantum dot coupled to ferromagnetic leads. We show that the interference of localized electron states with resonant electron states leads to the appearance of the Fano-Rashba effect. This effect occurs due to the interference of bound levels of spin-polarized electrons with the continuum of electronic states with an opposite spin polarization. We investigate this Fano-Rashba effect as a function of the applied magnetic field and Rashba spin-orbit coupling.