Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition

Post-growth annealing was carried out on ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD). The grain size of ZnO thin film increases monotonically with annealing temperature. The ZnO thin films were preferential to c-axis oriented after annealing as confirmed by Xray diffraction (XRD) measurements. Fourier transformation infrared transmission measurements showed that ZnO films grown at low temperature contains CO2 molecules after post-growth annealing. A two-step reaction process has been proposed to explain the formation mechanism of CO2, which indicates the possible chemical reaction processes during the metal-organic chemical vapor deposition of ZnO films.

PHOTOLUMINESCENCE SPECTRA OF STRAINED HETEROSTRUCTURE OF INP ON GAAS SUBSTRATE GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

A high-energy shift of the band-band recombination has been observed in photoluminescence spectra of the strained InP layer grown on GaAs substrate. The InP layer is under biaxial compressive strain at temperatures below the growth temperature, because the thermal expansion coefficient of InP is smaller than that of GaAs. The strain value determined by the energy shift of the band-edge peak is in good agreement with the calculated thermal strain. A band to carbon acceptor recombination is also identified.

METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAN

Single-crystal GaN films have been deposited on (01 (1) over bar 2) sapphire substrates using trimethylgallium (TMGa) and NH3 as sources. The morphological, crystalline, electrical and optical characterizations of GaN film are investigated. The carrier concentration ofundoped GaN increases with decreasing input NH3-to-TMGa molar flow ratio.

Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition

ZnO thin films were grown on GaAs （001） substrates by metal-organic chemical vapor deposition （MOCVD） at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precursor, respectively. The effects of the growth temperatures on the growth characteristics and optical properties of ZnO films were investigated. The X-ray diffraction measurement （XRD） results indicated that all the thin films were grown with highly c- axis orientation. The surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. Although there was no evidence of epitaxial growth, the scanning electron microscopy （SEM） image of ZnO film grown at 400℃ revealed the presence of ZnO microcrystallines with closed packed hexagon structure. The photoluminescence spectrum at room temperature showed only bright band-edge （3. 33eV） emissions with little or no deep-level e- mission related to defects.

Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition

High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. InP-based HBTs were fabricated by low pressure metal organic chemical vapor deposition(MOCVD) and wet chemical etching. The sub-collector and collector were grown at 655 ℃ and other layers at 550 ℃. To suppress the Zn out-diffusion in HBT, base layer was grown with a 16-minute growth interruption. Fabricated HBTs with emitter size of 2.5×20 μm~2 showed current gain of 70~90, breakdown voltage(BV_(CE0))>2 V, cut-off frequency(f_T) of 60 GHz and the maximum relaxation frequency(f_(MAX)) of 70 GHz.

Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers

In order to improve crystal quality for growth of quaternary InAlGaN, a series of InAlGaN films were grown on GaN buffer layer under different growth temperatures and carrier gases by low-pressure metal-organic vapor phase epitaxy. Energy dispersive spectroscopy (EDS) was employed to measure the chemical composition of the quaternary, high resolution X-ray diffraction (HRXRD) and photoluminescence (PL) technique were used to characterize structural and optical properties of the epilayers, respectively. The PL spectra of InAlGaN show with and without the broad-deep level emission when only N2 and a N2+H2 mixture were used as carrier gas, respectively. At pressure of 1.01×104 Pa and with mixed gases of nitrogen and hydrogen as carrier gas, different alloy compositions of the films were obtained by changing the growth temperature while keeping the fluxes of precursors of indium (In), aluminum (Al), gallium (Ga) and nitrogen (N2) constant. A combination of HRXRD and PL measurements enable us to explore the relative optimum growth parameters-growth temperature between 850℃ and 870℃,using mixed gas of N2+H2 as carrier gas.

The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system

This work was supported by the National Science Foundation of China (60976008 and 60776015), the Special Funds for Major State Basic Research Project (973 program) of China (2006CB604907), and the 863 High Technology R&D Program of China (2007AA03Z402 and 2007AA03Z451). The authors express their appreciations to Prof. Yongliang Li (Analytical and Testing Center, Beijing Normal University) for FE-SEM measurements, to DrTieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions.

Constructing porous frameworks from one-dimensional cobalt-oxygen clusters and pyridinedicarboxylate ligands adopting two rare coordination modes

A porous material with cobalt-oxygen cluster framework has been synthesized hydrothermally, which possesses large and rigid channels and manifests strong antiferromagnetic interactions, and the pyridinedicarboxylate ligand exhibits two types of rare coordination modes.

A three-dimensional metal-organic framework based on a triazine derivative: syntheses, structure analysis, and sorption studies

A novel metal-organic framework [Cu-3(m-TATB)(2)Py(CH3OH)(2)] (1) constructed of a triazine-based trigonal-planar ligand, 3,3',3 ''-s-triazine-2,4,6- triyltribenzoate (m-H(3)TATB), has been synthesized and structurally characterized. Compound 1 features three-dimensional (3D) channels and cavities together, and exhibits high carbon dioxide sorption at normal pressure.

Magnesium-Based 3D Metal-Organic Framework Exhibiting Hydrogen-Sorption Hysteresis

A new magnesium metal-organic framework (MOF) based on an asymmetrical ligand, biphenyl-3,4',5-tricarboxylate (H3PT) has been synthesized and structurally characterized. MOF Mg-3(BPT)(2)(H2O)(4) (1) consists of 10 hexagonal nanotube-like channels and exhibits pronounced hydrogen-sorption hysteresis at medium pressure.

Interweaving of single-helical and equal double-helical chains with the same helical axis in a 3D metal-organic framework

A novel metal-organic framework with unprecedented interweaving of coaxial single-helical and equal double-helical chains of opposite chirality, which features a super-connective helix simultaneously tangling with eight helices, was reported.

A new 1D metal-organic coordination polymer with blue fluorescent emission: [Cd-2(1,10 '-phen)(2)(betc)(H2O)](n)

A new coordination polymer [Cd-2(1,10'-phen)(2)(betc)(H2O)](n) (1) (betc = benzene-1,2,4,5-tetracarboxylate, 1,10'-phen = 1,10'-phenanthroline) was hydrothermally synthesized from CdCl2.2.5H(2)O, H(4)betc and 1,10'-phen at 160 degreesC. It was characterized by IR, XPS, TG and single-crystal X-ray diffraction. Compound 1 possesses infinite chair-like chains which construct 3D framework through pi-pi interactions and the hydrogen bond interactions. The fluorescent spectrum study shows that compound 1 exhibits blue fluorescent emission in the solid at room temperature.

Application of CO2-TPD in the synthesis of composite oxides from metal-organic precursors

CO2-TPD was demonstrated an effective way to investigate the phase formation during pyrolysis for the preparation of composite oxides using metal-organic molecules as precursors. Based on the CO2-TPD results, it was found that calcination condition had deep effect on the carbonate formation and the minimum firing temperature to acquire pure phase composite oxide. An optimized calcination schedule was then developed.

A metal-organic gel used as a template for a porous organic polymer

A polymeric metal-organic gel is described, which acts as a template in the preparation of macroporous polymethylmethacrylate, and can be easily removed post polymerisation.