TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON BEAM HEATING OF DEPOSITED POLYSILICON.

Advances in the dual electron-beam recrystallization technique arising from the fast scanning of a line beam parallel to the edges of narrow seeding windows are described. The resultant recrystallized layers are essentially defect-free, have good surface flatness, and cover large areas.

Influence of lattice temperature on SOI MOSFET's output characteristics

An explanation for the observed variations in the output behaviour of SOI transistors with different buried oxide thicknesses is presented. At low drain bias, the temperature effects are relatively insignificant while at high drain bias, the temperature effects dominate the nonlinear behaviour of the output characteristics.