The dewetting dynamics of the polymer thin film by solvent annealing

The slippage effect of the polymer chains is investigated in the dewetting process of the polymer solution film. The solvent-induced dewetting is used in our experiments to study the dynamics of hole growth in the dewetting process of the polymer solution film. Our results show that in the case of the low molecular weight polystyrene (PS) film, the slippage effect of the polymer chains is not displayed and the radius of the holes is R similar to exp(t/tau); in the case of the higher molecular weight PS film, the slippage effect of the polymer chain is not valid in the case of the thin film and that is valid in the case of the thick film, and the dynamic process of hole growth divides into three stages (R similar to t, and then R similar to t(x) (2/3 < x < 1), finally, R similar to t). Besides, the solvent and substrate properties also influence the dewetting dynamics of the polymer solution film.

Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility

Air-stable n-type field effect transistors were fabricated with an axially oxygen substituted metal phthalocyanine, tin (IV) phthalocyanine oxide (SnOPc), as active layers. The SnOPc thin films showed highly crystallinity on modified dielectric layer, and the electron field-effect mobility reached 0.44 cm(2) V-1 s(-1). After storage in air for 32 days, the mobility and on/off ratio did not obviously change. The above results also indicated that it is an effective approach of seeking n-type semiconductor by incorporating the appropriate metal connected with electron-withdrawing group into pi-pi conjugated system.

Effect of the nature of annealing solvent on the morphology of diblock copolymer blend thin films

The morphologies and structures for the thin film of blend systems consisting of two asymmetric polystyrene-block-polybutadiene (SB) diblock copolymers induced by annealing in the vapor of different solvents, namely, cyclohexane, benzene, and heptane, which have different selectivity or preferential affinity for a certain block, were investigated by tapping mode atomic force microscopy (AFM) and transmission electron microscopy (TEM). The results revealed that even a slight preferential affinity of good solvent for one block would strongly alter the morphology of the blend thin film.

Improving performance of polymer photovoltaic devices using an annealing-free approach via construction of ordered aggregates in solution

Low crystalline order has been proved to be one of the main hindrances for achieving high performance devices based on thin films composed of crystallizable polymer. In this work, we use a facile method to substantially improve crystallinity of poly(3-hexylthiophene) (P3HT) in its pure or composite film via the construction of ordered precursors in the solution used for thin film deposition. These improvements have been confirmed by bright-field transmission electron micrography, electron diffraction, UV-Vis absorption and wide-angle X-ray diffraction.

Effect of annealing on the deformation mechanism of a styrene/n-butyl acrylate copolymer latex film investigated by synchrotron small-angle X-ray scattering

The deformation mechanism of a styrene/n-butyl acrylate copolymer latex film subjected to uniaxial tensile stress was studied by small-angle X-ray scattering. The influence of annealing at 23, 60, 80, and 100 degrees C for 4 h on microscopic deformation processes was elucidated. It was demonstrated that the microscopic deformation mechanism of the latex films transformed gradually from nonaffine deformation behavior to affine deformation behavior with increasing annealing temperature.

Vertical structure p-type permeable metal-base organic transistors based on N,N '-diphentyl-N,N '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine

In this article, vertical structure p-type permeable-base organic transistors were proposed and demonstrated. A hole-type organic semiconductor N,N-'-diphentyl-N,N-'-bis(1-naphthylphenyl)-1,1(')-biphenyl-4,4(')-diamine was used as emitter and collector. In the permeable-base transistors, the metal base was formed by firstly coevaporating Al and Ca in vacuum and then annealing at 120 degrees C for 5 min in air, followed by a thin Al deposition. These devices show a common-base current gain of near 1.0 and a common-emitter current gain of similar to 270.

Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing

A nonvolatile write-once-read-many-time (WORM-time) memory device based on poly(N-vinylcarbazole) (PVK) films was realized by thermally annealing. The device can be fabricated using a simple spin coat method. It was found that the control of PVK film surface morphology by thermally annealing plays an important role in achieving the WORM memory properties. The memory device showed an ON/OFF current ratio as high as 10(4) and the retention time was over 2000 s without degradation.

The effect of annealing treatment on performance of interdiffused organic photovoltaic devices

We fabricated the interdiffused organic photovoltaic devices, which composed of poly (2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene) (MEH-PPV) and buckminsterfullerene (C-60), by annealing treatment. After annealing, C60 diffused into the MEH-PPV layer, in consequence, MEH-PPV/C-60 interfacial area was increased and their interface became closer proximity. The results lead to reduce reverse-bias saturation current (J(s)), and increase the open-circuit voltage (V-OC) and the short-circuit current (J(SC)).

Effects of thermal annealing on polymer photovoltaic cells with buffer layers and in situ formation of interfacial layer for enhancing power conversion efficiency

We have investigated the effects of thermal annealing before and after cathode deposition on poly(3-hexylthiophene)(P3HT)/[6,6]-phenyl C61-butyric acid methyl ester (PCBM) blend photovoltaic cells with different cathode buffer layers. The introduction of cathode buffer layer such as lithium fluoride (LiF) and calcium oxide (CaO) in pre-annealing cells can increase the open-circuit voltage (V-oc) and the power conversion efficiency (PCE). Post thermal annealing after cathode deposition further enhanced the PCE of the cells with LiF/Al cathode.

Phthalocyanato tin(IV) dichloride: An air-stable, high-performance, n-type organic semiconductor with a high field-effect electron mobility

Phthalocyanato tin(IV) dichloride, an axially dichloriniated MPc, is an air-stable high performance n-type organic semiconductor with a field-effect electron mobility of up to 0.30 cm(2) V-1 s(-1). This high mobility together with good device stability and commercial availability makes it a most suitable n-type material for future organic thin-film transistor applications.

Influence of Annealing on Microstructure and Mechanical Properties of Isotactic Polypropylene with beta-Phase Nucleating Agent

The microstructure and mechanical properties of beta-nucleated iPP before and after being annealed at different temperatures (90-160 degrees C) have been analyzed, Annealing induced different degrees of variation in fracture toughness of beta-nucleated iPP samples. namely, slight enhancement at relatively low annealing temperatures (< 110 degrees C) and great improvement at moderate temperatures (120-130 degrees C), whereas dramatic deterioration at relatively high temperatures ( > 140 degrees C) has been observed. The variation of fracture toughness of beta-nucleated iPP is observed to be dependent on the content of beta-NA. Experiments, including scanning electronic microscope (SEM), wide-angle X-ray diffraction (WAXD), differential scanning calorimetry (DSC), small-angle X-ray scattering (SAXS), and dynamic mechanical analysis (DMA), are performed to study the variations of microstructures as well as the toughening mechanism of the beta-nucleated iPP after being annealed.

Tunable Luminescence in Monodisperse Zirconia Spheres

In this article, monodisperse spherical zirconia (ZrO2) particles with a narrow size distribution were prepared by the controlled hydrolysis of zirconium butoxide in ethanol, followed by heat treatment in air at low temperature from 300 to 500 degrees C. X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, thermogravimetric and differential thermal analysis (TG/DTA), scanning electron microscopy (SEM), transmission electron microscopy (TEM), photoluminescence (PL) spectra, kinetic decay, and electron paramagnetic resonance were used to characterize the samples. The experimental results indicate that the annealed ZrO2 samples exhibit broad, intense visible photoluminescence. The annealing temperature is indispensable for the luminescence of the obtained ZrO2 particles. The emission colors of the ZrO2 samples can be tuned from blue to nearly white to dark orange by varying the annealing temperature.

Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics

In this work we present a permeable base transistor consisting of a 60 nm thick N,N'diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine layer or a 40 nm thick 2,6-diphenyl-indenofluorene layer as the emitter, a CalAl/Ca multilayer as the metal base, and p-Si as collector. In the base, the Ca layers are 5 nm thick and the Al layer was varied between 10 and 40 nm. the best results obtained with a 20 nm thick layer. The devices present common-base current gain with both organic layer and silicon acting as emitter, but there is only observable common-emitter current gain when the organic semiconductor acts as emitter. The obtained common-emitter current gain, similar to 2, is independent on collector-emitter voltage, base current and organic emitter in a reasonable wide interval. Air exposure or annealing of the base is necessary to achieve these characteristics, indicating that an oxide layer is beneficial to proper device operation.

Highly Uniform Gd(OH)(3) and Gd2O3:Eu3+ Nanotubes: Facile Synthesis and Luminescence Properties

Uniform Gd(OH)(3) nanotubes have been prepared via a simple wet-chemical route at ambient pressure and low temperature, without any catalysts, templates, or substrates, in which Gd(NO3)(3) was used as the gallium source and ammonia as the alkali. SEM and TEM images indicate that the as-obtained Gd(OH)3 entirely consists of uniform nanotubes in high yield with diameters of about 40 nm and lengths of 200-300 nm. The temperature-dependent morphological evolution and the formation mechanism of the Gd(OH)(3) nanotubes were investigated in detail. Furthermore, the Gd2O3 and Eu3+-doped Gd2O3 nanotubes, which inherit their parents' morphology, were obtained during a direct annealing process in air. The corresponding Gd2O3:Eu3+ nanotubes exhibit the strong red emission corresponding to the D-5(0)-F-7(2), transition of the Eu3+ ions under UV light or low-voltage electron beam excitation, which might find potential applications in the fields such as light-emitting phosphors, advanced flat panel displays, or biological labeling.

Study on the Single Crystals of Poly(3-octylthiophene) Induced by Solvent-Vapor Annealing

Needle-like single crystals of poly(3-octylthiophene) (P3OT) have been prepared by tetrahydrofuran-vapor annealing. The morphology and structure of the crystals were characterized with optical microscopy, scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and wide-angle X-ray diffraction. It is observed that the P3OT molecules are packed with the backbones parallel to the length axis of the crystal and the alkyl side chains perpendicular to the substrate. The field effect transistor based on the P3OT single crystal exhibited a charge carrier mobility of 1.54 x 10(-4) cm(2)/(Vs) and on/off current ratio of 37, and the molecular orientation of the crystal is ascribed to account for the device performance. The time-dependent morphological evolution demonstrated that the crystals underwent Ostwald ripening when annealed.