Behavior of Multiple Shear Bands in Zr-Based Bulk Metallic Glass

The deformation behavior of Zr41.2Ti13.8Cu12.5Ni10Be22.5 bulk metallic glass was studied by in situ scanning electron microscopy (SEM) quasi-static uniaxial compression tests at room temperature. Multiple shear bands were observed with a large plasticity. Microscopic examination demonstrates that slipping, branching and intersecting of multiple shear bands are the main mechanisms for enhancing the plasticity of this metallic glass. Additionally, nano/micro-scale voids and cracks at the intersecting sites of shear bands and preferential etching of shear bands were observed as well. These observations demonstrated that the formation of shear bands in bulk metallic glasses is resulted mainly from local free volume coalescence.

Atomistic Simulations of the Mechanical Behavior of Fivefold Twinned Nanowires

Atomistic simulations are used to investigate the mechanical behavior of metal nanowire with fivefold twinned structure. The twinned nanowires were reported in recent experiments [B. Wu et al., Nano Lett. 6, 468 (2006)]. In the present paper, we find that the yield strength of the fivefold twinned Cu nanowire is 1.3 GPa higher than that of the face-centered-cubic (fcc) < 110 > single crystalline Cu nanowire without fivefold twinned structure, and the microstructure-hardened mechanism is primarily due to the twinned boundaries which act as the barriers for the dislocation emission and propagation. However, we also find that the fivefold twinned Cu nanowire has lower ductility than that of fcc < 110 > single crystalline Cu nanowire without the twinned structure, and this is mainly attributed to the scarcity and low mobility of dislocations. In addition, in our simulations the effect of preexisting stacking faults and dislocations on strength of the fivefold twinned nanowires is investigated.

Deformation behavior and microstructure effect in 2124Al/SiCp composite

Dynamic compression tests were performed by means of a Split Hopkinson Pressure Bar (SHPB). Test materials were 2124Al alloys reinforced with 17% volume fraction of 3, 13 and 37 μm SiC particles, respectively. Under strain rate ε = 2100 l/s, SiC particles have a strong effect on σ_0.2 of the composites and the σ_0.2 increases with different SiC particle size in the following order: 2124Al-alloy → 124Al/SiC_p (37 μm) → 2124Al/SiC_p (13 μm) → 2124Al/SiC_p (3 μm), and the strain hardening of the composites depends mainly on the strain hardening of matrix, 2124A1 alloy. The results of dimensional analysis present that the flow stress of these composites not only depends on the property of reinforcement and matrix but also relates to the microstructure scale, matrix grain size, reinforcement size, the distance between reinforcements and dislocations in matrix. The normalized flow stress here is a function of inverse power of the edge-edge particle spacing, dislocation density and matrix grain size. Close-up observation shows that, in the composite containing SiC particles (3 μm), localized deformation formed readily comparing with other materials under the same loading condition. Microscopic observations indicate that different plastic flow patterns occur within the matrix due to the presence of hard particles with different sizes.

Influence of Indenter Tip Roundness on Hardness Behavior in Nanoindentation

In this paper. the effect of indenter tip roundness on hardness behavior for two typical elastic perfectly plastic materials is studied by means of finite element simulation. A rigid conical indenter of semi apex angle 70.3 degrees fitted smoothly with a spherical tip is employed. It is shown that as the indentation depth increases hardness first rises from zero, reaches a maximum and then decreases slowly approaching asymptotically the limiting value equal to that due to a conical indenter of ideally sharp tip. The range within which hardness varies appreciably is comparable to the radius of the indenter tip. The difference between the maximum value and the limiting value depends on the yield stress over the Young's modulus ratio. The smaller this ratio the greater the difference is. Numerical simulation also provides an opportunity for checking the accuracy and limitations of the widely used Oliver-Pharr method.

Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.

A time domain computation method for dynamic behavior of mooring system

A quasi-steady time domain method is developed for the prediction of dynamic behavior of a mooring system under the environmental disturbances, such as regular or irregular waves, winds and currents. The mooring forces are obtained in a static sense at each instant. The dynamic feature of the mooring cables can be obtained by incorporating the extended 3-D lumped-mass method with the known ship motion history. Some nonlinear effects, such as the influence of the instantaneous change of the wetted hull surface on the hydrostatic restoring forces and Froude-Krylov forces, are included. The computational results show a satisfactory agreement with the experimental ones.