Magnetic anisotropy of BaM ferrites

Using the point charge model with weak field scheme, a calculation of the single ion anisotropy of Fe3+ ionsn at all crystal sites in BaFe12O19 was made by perturbation theory. The results show that in addition to the 2b site, all other sites have non-negligible contributions. © 1983.

Magnetic properties and anisotropy of orthorhombic DyMnO3 single crystal

An orthorhombic DyMnO3 single crystal has been studied in magnetic fields up to 14 T and between 3 K and room temperature. The field dependent ordering temperature of Dy moments is deduced. The paramagnetic Curie Weiss behavior is related mainly to the Dy3+sublattice whereas the Mn sublattice contribution plays a secondary role. DC magnetization measurements show marked anisotropic features, related to the anisotropic structure of a cubic system stretched along a body diagonal, with a magnetic easy axis parallel to the crystallographic b axis. A temperature and field dependent spin flop transition is observed below 9 K, when relatively weak magnetocrystalline anisotropy is overcome by magnetic fields up to 1.6 T. © 2013 Elsevier B.V.

Anisotropy of 2G HTS racetrack coils in external magnetic fields

Pancake or racetrack coils wound with second generation high-temperature superconductors (2G HTSs) are important elements for numerous applications of HTS. The applications of these coils are primarily in rotating machines such as motors and generators where they must withstand external magnetic fields from various orientations. The characterization of 2G HTS coils is mostly focused on AC loss assessment, critical current and maximum magnetic field evaluation. In this study, racetrack coils will be placed in different orientations of external magnetic fields - Jc (Ic) versus angle measurements will be performed and interpreted. Full attention is paid to studies of anisotropy Jc versus angle curves for short samples of 2G HTS tapes. As will be shown, the shape of the Jc versus angle curves for tapes has a strong influence on the Jc (Ic) versus angle curves for coils. In this work, a unique and unpredicted behavior of the Jc versus angle curves for the 2G HTS racetrack coils was found. This will be analyzed and fully explained. © 2013 IOP Publishing Ltd.

Anisotropy preserving DTI processing

Statistical analysis of diffusion tensor imaging (DTI) data requires a computational framework that is both numerically tractable (to account for the high dimensional nature of the data) and geometric (to account for the nonlinear nature of diffusion tensors). Building upon earlier studies exploiting a Riemannian framework to address these challenges, the present paper proposes a novel metric and an accompanying computational framework for DTI data processing. The proposed approach grounds the signal processing operations in interpolating curves. Well-chosen interpolating curves are shown to provide a computational framework that is at the same time tractable and information relevant for DTI processing. In addition, and in contrast to earlier methods, it provides an interpolation method which preserves anisotropy, a central information carried by diffusion tensor data. © 2013 Springer Science+Business Media New York.

DTADH and quantum critical phenomena caused by anisotropy and external magnetic field for spin-1/2 Heisenberg diamond chains

Using the transfer matrix renormalization group (TMRG) method, we study the connection between the first derivative of the thermal average of driving-term Hamiltonian (DTADH) and the trace of quantum critical behaviors at finite temperatures. Connecting with the exact diagonalization method, we give the phase diagrams and analyze the properties of each phase for both the ferromagnetic and anti-ferromagnetic frustrated J(3) anisotropy diamond chain models. The finite-temperature scaling behaviors near the critical regions are also investigated. Further, we show the critical behaviors driven by external magnetic field, analyze the formation of the 1/3 magnetic plateau and the influence of different interactions on those critical points for both the ferrimagnetic and anti-ferromagnetic distorted diamond chains.

Dynamics of photo-enhanced magneto-crystalline anisotropy in diluted ferromagnetic GaMnAs

By chopping a pump beam in conventional time-resolved Kerr rotation (TRKR) experiments and measuring the time evolution of M-shaped "major" hysteresis loops of magnetic linear dichroism (Delta MLD = MLDpump-on MLDpump-off), the differential MLD signal in the presence and the absence of the pump beam, we studied the dynamics of photo-enhanced magneto-crystalline anisotropy, and found that its very long recovering time (much longer than 13 ns) might reflect the nature of the coherent coupling between photo-excited holes and localized spins in the d shell of manganese.

Quantum teleportation via a two-qubit Heisenberg XXZ chain - effects of anisotropy and magnetic field

We study quantum teleportation via a two-qubit Heisenberg XXZ, chain under an inhomogeneous magnetic field. We first consider entanglement teleportation, and then focus on the teleportation fidelity under different conditions. The effects of anisotropy and the magnetic field, both uniform and inhomogeneous, are discussed. We also find that, though entanglement teleportation does require an entangled quantum channel, a nonzero critical value of minimum entanglement is not always necessary.

Anisotropy of magnetic properties in ferrimagnetic ytterbium iron garnet under high magnetic fields

The magnetic anisotropy in ytterbium iron garnet (YbIG) is theoretically investigated under high magnetic fields (up to 160 kOe). According to the crystal field effect in ytterbium gallium garnet (YbGaG), a detailed discussion of crystal-field interaction in YbIG is presented where a suitable set of crystal-field parameters is obtained. Meanwhile, the influences of nine crystal-field parameters on the crystal-field energy splitting are analyzed. On the other hand, considering the ytterbium-iron (Yb-Fe) superexchange interaction of YbIG, the spontaneous magnetization is calculated at different temperatures for the [111] direction. In particular, we demonstrate that the Wesis constant lambda is the function of 1/T in YbIG. In addition, the field dependences of the magnetization for the [110] and [111] directions are theoretically described where a noticeable anisotropy can be found. Our theory further confirms the great contribution of anisotropic Yb-Fe superexchange interaction to the anisotropy of the magnetization in YbIG. Moreover, our theoretical results are compared with the available experiments.

Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface

Fe films with the different thicknesses were grown on c(4x4) reconstructed GaAs (001) surfaces at low temperature by molecular-beam epitaxy. Well-ordered bcc structural Fe epitaxial films are confirmed by x-ray diffraction patterns and high-resolution cross-sectional transmission electron microscopy images. A large lattice expansion perpendicular to the surface in Fe film is observed. In-plane uniaxial magnetic anisotropy is determined by the difference between magnetizing energy along [110] and [110] directions, and the constant of interfacial uniaxial magnetic anisotropy is calculated to be 1.02x10(-4) J m(-2). We also find that magnetic anisotropy is not obviously influenced after in situ annealing, but in-plane strain is completely changed.

Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry

The well-width dependence of in-plane optical anisotropy (IPOA) in (001) GaAs/AlxGa1-xAs quantum wells induced by in-plane uniaxial strain and interface asymmetry has been studied comprehensively. Theoretical calculations show that the IPOA induced by in-plane uniaxial strain and interface asymmetry exhibits much different well-width dependence. The strain-induced IPOA is inversely proportional to the energy spacing between heavy- and light-hole subbands, so it increases with the well width. However, the interface-related IPOA is mainly determined by the probability that the heavy- and light-holes appear at the interfaces, so it decreases with the well width. Reflectance difference spectroscopy has been carried out to measure the IPOA of (001) GaAs/AlxGa1-xAs quantum wells with different well widths. Strain- and interface-induced IPOA have been distinguished by using a stress apparatus, and good agreement with the theoretical prediction is obtained. The anisotropic interface potential parameters are also determined. In addition, the energy shift between the interface- and strain-induced 1H1E reflectance difference (RD) structures, and the deviation of the 1L1E RD signal away from the prediction of the calculation model have been discussed.

Room-temperature ferromagnetism and in-plane magnetic anisotropy characteristics of nonpolar GaN:Mn films

Diluted magnetic nonpolar GaN Mn films have been fabricated by implanting Mn ions into nonpolar aplane (1 1 (2) over bar 0) p-type GaN films and a subsequent rapid thermal annealing process. The ferromagnetism properties of the films were studied by means of superconducting quantum interference device (SQUID). Clearly in-plane magnetic anisotropy characteristics of the sample at 10 K were revealed with the direction of the applied magnetic field rotating along the in-plane [0 0 0 1]-axis. Moreover, obvious ferromagnetic properties of the sample up to 350 K were detected by means of the temperature-dependent SQUID. (C) 2009 Elsevier B.V. All rights reserved.

Low power 2 x 2 thermo-optic SOI waveguide switch fabricated by anisotropy chemical etching

A 2 x 2 thermo-optic (TO) Mach-Zehnder (MZ) switch based on silicon waveguides with large cross section was designed and fabricated on silicon-on-insulator (SOI) wafer. The multi-mode interferometers (MMI) were used as power splitter and combiner in MZ structure. In order to get smooth interface, anisotropy chemical wet-etching of silicon was used to fabricate the waveguides instead of dry-etching. Additional grooves were introduced to reduce power consumption. The device has a low switching power of 235 mW and a switching speed of 60 mus. (C) 2004 Elsevier B.V. All rights reserved.