Papel do bloqueio dos receptores NMDA e da ativação dos receptores GABAA na manifestação dos déficits neurocomportamentais decorrentes da exposição ao etanol durante o período equivalente ao terceiro trimestre de gestação

A exposição gestacional ao etanol produz um amplo espectro de defeitos neurocomportamentais que podem persistir ao longo da vida. Dentre os distúrbios mais comumente observados estão o transtorno do déficit de atenção e hiperatividade (TDAH) e os déficits de aprendizado e memória. Apesar da grande quantidade de estudos, os mecanismos envolvidos com a manifestação destes transtornos permanecem pouco conhecidos. Estudos em roedores vêm demonstrando que o período equivalente ao terceiro trimestre de gestação é critico para o aparecimento destas alterações comportamentais. Durante este período, que é caracterizado por intensa sinaptogênese, a neurotoxicidade do etanol vem sendo atribuída ao bloqueio dos receptores glutamatérgicos do tipo N-metil-D-aspartato (NMDA) e hiperativação dos receptores do ácido gama-aminobutírico do subtipo A (GABAA). Tendo em vista que ao longo do desenvolvimento estes receptores diferem em relação a função e distribuição espaço-temporal, neste estudo avaliamos a contribuição relativa do bloqueio dos receptores NMDA e hiperativação dos receptores GABAA durante o período equivalente ao terceiro trimestre de gestação para a manifestação da hiperatividade locomotora e para os distúrbios de aprendizado e memória de camundongos pré-púberes. Para tanto, este estudo foi realizado em duas etapas. Na primeira, investigamos os efeitos da exposição isolada ao bloqueador NMDA MK801 (MK) e ao agonista GABAA muscimol (MU). Para tanto, em dias alternados do segundo dia pós-natal (PN2) a PN8, os animais receberam uma injeção intraperitoneal de Salina (SAL), MK nas doses de 0,1, 0,3 ou 0,5 mg/kg ou de MU nas doses de 0,1 0,3 ou 0,5 mg/kg. Na segunda etapa investigamos os efeitos da administração simultânea de MK (0,1mg/kg) e MU (doses 0,02, 0,1 ou 0,5 mg/kg). Em PN25, a atividade locomotora foi automaticamente avaliada por 15 min no teste de campo aberto. Em PN31 e PN32, o aprendizado e memória foi avaliado no teste da esquiva passiva inibitória. Em relação aos resultados da exposição isolada a cada uma das drogas, apenas o tratamento com MK promoveu um aumento dose dependente na atividade locomotora. No teste da esquiva passiva inibitória, os animais expostos as maiores doses de MK e MU apresentaram déficits de aprendizado e memória. Em relação aos resultados da exposição combinada de MK e MU, não foram observadas diferenças significativas entre os grupos na atividade locomotora. Na esquiva passiva inibitória, a administração simultânea de MK e MU, em doses que administradas isoladamente não tiveram efeito, promoveu prejuízos de aprendizado e memória. Nossos resultados sugerem que, enquanto a hiperatividade locomotora está associada apenas com o bloqueio dos receptores NMDA, os déficits de aprendizado e memória podem ser produto de uma ação sinergista do etanol nos dois receptores.

Avaliação da terceirização da gestão municipal de unidades ambulatoriais de Duque de Caxias, no programa de Saúde Mental.

O trabalho tem por objeto a terceirização da gestão municipal de unidades ambulatoriais de saúde mental no segundo, terceiro e quarto distritos do município de Duque de Caxias, no Rio de Janeiro, na modalidade de organização social, entre 2009 a 2012. O marco inicial refere-se a assinatura do Termo de parceria entre a Secretaria Municipal de Saúde de Duque de Caxias (SMSDC) e uma Organização da Sociedade Civil de Interesse Público (OSCIP). O marco final refere-se a rescisão unilateral do Termo de Parceria com a OSCIP por parte da SMSDC. O objetivo geral: analisar a gestão terceirizada nos ambulatórios de saúde mental do município de Duque de Caxias no referido período na modalidade de OSCIP. Objetivos específicos: descrever as circunstâncias de implantação do processo de terceirização na gestão das unidades de saúde mental em Duque de Caxias na modalidade de OSCIP; analisar a participação da OSCIP nos ambulatórios de saúde mental no município de Duque de Caxias nos distritos de interesse do estudo; discutir as implicações do modelo de terceirização para a política de Saúde Mental em Duque de Caxias. Trata-se de abordagem quanti-qualitativa do tipo descritiva. As fontes primárias se constituíram de decretos, leis, portarias, resoluções, documentos, atas e relatórios de gestão da OSCIP e do programa de Saúde Mental de Duque de Caxias, atas do Conselho do Municipal de Caxias e atas das Conferencias Nacionais e Municipais de Saúde e de Saúde Mental. Para o processo de análise dos dados foi utilizada a analise documental e a analise estatística. Os dados quantitativos foram tabulados e analisados através de estatística simples e apresentados sob a forma de tabelas e gráficos a partir dos dados do TABNET, DATASUS, relatórios da OSCIP e do Programa de Saúde Mental de Duque de Caxias, em especial das unidades terceirizadas dos 2, 3 e 4 distritos do município. Os resultados mostraram que apesar da parceria entre a instituição terceirizada e a Secretaria Municipal de Saúde que previa aumento da produção de consultas em Saúde Mental, alcançando um mínimo 75% das consultas estimadas para psiquiatras e psicólogos, não resultou em diminuição significativa na taxa de internação psiquiátrica no período estudado, que passou de 1,19% do total de internações em 2009 para 0,77% deste total em 2012, apresentando até uma elevação para 1,26% no ano de 2010. Tal fato pode ser devido ao modelo de gestão terceirizado não estar adequado à complexidade da abordagem do paciente com transtorno mental, onde o envolvimento e a formação do profissional baseada no vínculo, na participação do paciente e a construção do seu plano terapêutico com a participação da família, são aspectos diferenciais na qualidade da assistência em saúde mental. O modelo de gestão adotado por Caxias para as Unidades estudadas não apresentou correspondência na redução efetiva da taxa de internação psiquiátrica dos pacientes residentes em Duque de Caxias.

p-MOS controlled lateral thyristor: A MOS controllable thyristor suitable for integration

A novel CMOS compatible lateral thyristor is proposed in this paper. Its thyristor conduction is fully controlled by a p-MOS gate. Loss of MOS control due to parasitic latch-up has been eliminated and triggering of the main thyristor at lower forward current achieved. The device operation has been verified by 2-D numerical simulations and experimental fabrication.

Optimum design of 1.4KV trench IGBTs - The next generation of high power switching devices

The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next generation of power semiconductor devices with wide applications ranging from motor control (1-4 kV) to HVDC (6.5 kV). Here we present for the first time an optimum design of a 1.4kV Trench IGBT using a new, fully integrated optimisation system comprising process and device simulators and the RSM optimiser. The use of this new TCAD system has contributed largely to realizing devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4kV Trench IGBTs which are in excellent agreement with the TCAD predictions are reported.

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

Analytic model for turn off in the silicon-on-insulator LIGBT

Lateral insulated gate bipolar transistors (LIGBTs) in silicon-on-insulator (SOI) show a unique turn off characteristic when compared to junction-isolated RESURF LIGBTs or vertical IGBTs. The turn off characteristic shows an extended `terrace' where, after the initial fast transient characteristic of IGBTs due to the loss of the electron current, the current stays almost at the same value for an extended period of time, before suddenly dropping to zero. In this paper, we show that this terrace arises because there is a value of LIGBT current during switch off where the rate of expansion of the depletion region with respect to the anode current is infinite. Once this level of anode current is approached, the depletion region starts to expand very rapidly, and is only stopped when it reaches the n-type buffer layer surrounding the anode. Once this happens, the current rapidly drops to zero. A quasi-static analytic model is derived to explain this behaviour. The analytically modelled turn off characteristic agrees well with that found by numerical simulation.

Spice modelling of the superjunction IGBT

This paper presents a SPICE model of the SuperJunction Insulated Gate Bipolar Transistor (SJIGBT) [1]. SPICE simulation results are in good agreement with the DESSIS simulation results under DC conditions. This model consists of an intrinsic MOSFET and a parallel combination of a wide and a narrow base pnp BJTs. A parasitic JFET is also included to account for the restricted current flow between two adjacent p-wells. In addition the JFET component also models the additional depletion region caused by the transverse junction at the upper side of the n-drift region where the current is mainly transported via majority carriers.

Active Voltage Control on series connection of IGBTs and diode recovery optimization

In this paper an Active Voltage Control (AVC) technique is presented, for series connection of insulated-gate-bipolar-transistors (IGBT) and control of diode recovery. The AVC technique can control the switching trajectory of an IGBT according to a pre-set reference signal. In series connections, every series connected IGBT follows the reference and so that the dynamic voltage sharing is achieved. Another key advantage for AVC is that by changing the reference signal at turn-on, the diode recovery can be optimised. © 2010 IEEE.

Investigation into IGBT dV/dt during turn-off and its temperature dependence

In many power converter applications, particularly those with high variable loads, such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the insulated gate bipolar transistor (IGBT) junction temperature using the collector voltage dV/dt at turn-OFF is outlined. A theoretical closed-form expression for the dV/dt at turn-OFF is derived, closely agreeing with experimental measurements. The role of dV/dt in dynamic avalanche in high-voltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV/dt are discussed, including implementation of such a temperature measurement technique. © 2006 IEEE.

IGBT series connection under active voltage control

In this paper an Active Voltage Control (AVC) technique is presented, for series connection of insulated-gate-bipolar-transistors (IGBT) and control of diode recovery. The AVC technique can control the switching trajectory of an IGBT according to a pre-set reference signal. In series connections, every series connected IGBT follows the reference and so that the dynamic voltage sharing is achieved. For the static voltage balancing, the AVC technique can clamp the highest collector-to-emitter voltage to a pre-set clamping voltage level. By selecting the value of the clamping voltage, the difference among series connected IGBTs can be controlled in an accepted range. Another key advantage for AVC is that by changing the reference signal at turn-on, the diode recovery can be optimized. © 2011 EPE Association - European Power Electr.

Transient electrothermal simulation of power semiconductor devices

In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature.© 2010 IEEE.

200-V lateral superjunction LIGBT on partial SOI

This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R dson of 765 mΩ ̇ mm 2. It exhibits half the value of specific on-state resistance R dson and three times higher saturation current (I dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R dson at 175°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process. © 2012 IEEE.

Superjunction IGBT filling the gap between SJ MOSFET and ultrafast IGBT

In this letter, we report E off-versus-V ce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dE off/dV ce > 0 in a transition region between purely unipolar and strongly bipolar device behaviors. This effect is due to the action of p-pillar hole current when depleting the drift layer of SJ IGBTs during turnoff and the impact of current gain on the transconductance. Such SJ IGBTs surpass by a very significant margin their superjunction MOSFET counterparts in terms of power-handling capability and on-state and turnoff losses, all at the same time. © 2012 IEEE.

FPGA, physics-based modeling of IGBT and pin diode for hardware co-simulation of complex power electronic converters and systems

This paper presents the steps and the challenges for implementing analytical, physics-based models for the insulated gate bipolar transistor (IGBT) and the PIN diode in hardware and more specifically in field programmable gate arrays (FPGAs). The models can be utilised in hardware co-simulation of complex power electronic converters and entire power systems in order to reduce the simulation time without compromising the accuracy of results. Such a co-simulation allows reliable prediction of the system's performance as well as accurate investigation of the power devices' behaviour during operation. Ultimately, this will allow application-specific optimisation of the devices' structure, circuit topologies as well as enhancement of the control and/or protection schemes.

Series-connected IGBTs using active voltage control technique

With series insulated-gate bipolar transistor (IGBT) operation, well-matched gate drives will not ensure balanced dynamic voltage sharing between the switching devices. Rather, it is IGBT parasitic capacitances, mainly gate-to-collector capacitance Cgc, that dominate transient voltage sharing. As Cgc is collector voltage dependant and is significantly larger during the initial turn-off transition, it dominates IGBT dynamic voltage sharing. This paper presents an active control technique for series-connected IGBTs that allows their dynamic voltage transition dV\ce/dt to adaptively vary. Both switch ON and OFF transitions are controlled to follow a predefined dVce/dt. Switching losses associated with this technique are minimized by the adaptive dv /dt control technique incorporated into the design. A detailed description of the control circuits is presented in this paper. Experimental results with up to three series devices in a single-ended dc chopper circuit, operating at various low voltage and current levels, are used to illustrate the performance of the proposed technique. © 2012 IEEE.