Probing disorder in cubic pyrochlore Bi-1 Zn-5(1) Nb-0(1) O-5(7) (BZN) thin films

The dielectric response of pulsed laser ablated Bi-1 Zn-5(1) Nb-0(1) O-5(7) (BZN) thin films are investigated within the temperature range of 300-660 K and frequency range of 100 Hz-100 kHz Thin film exhibited a strong dielectric relaxation behavior A sharp rise in dielectric constant of BZN thin film at high temperatures is related to disorder in canon and anion lattices Observed dielectric relaxation implies a redistribution of charges within the unit cell This phenomenon suggests that the large change in dielectric constant is due to a dynamical rise of dipolar fluctuations in the unit cell XPS spectra of BZN (A(2)B(2)O(6)O') cubic pyrochlore confirm that the relaxation corresponds to the ionic hopping among the A and O' positions of several local potential minima Barrier height for hopping is distributed between 0 and 0 94 eV The O is spectrum confirms presence of two types of oxygen in BZN thin film The disorder in charge neutralized thin film is correlated with XPS spectra (C) 2010 Elsevier Ltd All rights reserved

Synthesis of Novel Oxide Pyrochlores, A2BB?O7 (A = La, Nd; BB? = Pb, Sn, Bi), by Alkali Melt Route

Oxide pyrochlores of the formula A2BB? O7 (A = La, Nd; BB? = Pb, Sn, Bi) have been synthesized by a low-temperature ambient-pressure route employing KOH melts. All the compositions, including La2Bi2O7 and its strontium-substituted derivatives, La2-xSrxBi2O7-?, are deeply colored insulators, confirming that a metallic ground state is not achieved for Pb(IV) and Bi(IV/V) oxides with the pyrochlore structure.

Electrical switching and thermal studies on bulk Ge-Te-Bi glasses

Bulk, melt quenched Ge18Te82-xBix glasses (1 <= x <= 4) have been found to exhibit memory type electrical switching behavior, which is in agreement with the lower thermal diffusivity values of Ge-Te-Bi samples. A linear variation in switching voltages (V-th) has been found in these samples with increase in thickness which is consistent with the memory type electrical switching. Also, the switching voltages have been found to decrease with an increase in temperature which happens due to the decrease in the activation energy for crystallization at higher temperatures. Further. V-th of Ge18Te82-xBix glasses have been found to decrease with the increase in Bi content, indicating that in the Ge-Te-Bi system, the resistivity of the additive has a stronger role to play in the composition dependence of V-th, in comparison with the network connectivity and rigidity factors. In addition, the composition dependence of crystallization activation energy has been found to show a decrease with an increase in Bi content, which is consistent with the observed decrease in the switching voltages. X-ray diffraction studies on thermally crystallized samples reveal the presence of hexagonal Te, GeTe, Bi2Te3 phases, suggesting that bismuth is not taking part in network formation to a greater extent, as reflected in the variation of switching voltages with the addition of Bi. SEM studies on switched and un-switched regions of Ge-Te-Bi samples indicate that there are morphological changes in the switched region, which can be attributed to the formation of the crystalline channel between two electrodes during switching. (C) 2010 Elsevier B.V. All rights reserved.

Structure evolution and phase change in Ag-5.1 at.% Bi alloy during mechanical alloying

In this paper we explore the enhancement of solubility in a mechanically driven immiscible system experimentally using a mixture of Ag and Bi powders corresponding to a composition of Ag-5.1 at.% Bi. Increase in solubility can be correlated with the combination of sizes of both Ag and Bi at the nanometric scale. It is shown that complete solid solution of Ag-5.1 at.% Bi forms when the respective sizes of :Bi and Ag exceed 13 and 8 nm respectively. We have carried out a thermodynamic analysis of the size- and strain-dependent free energy landscape and compared the results to the initial mixture of microsized particles to rationalize the evolution of Ag solid solution. The agreement indicates that the emerging driving force for the formation of solid solution is primarily due to size reduction rather than the enhanced kinetics of mass transport due to mechanical driving. (c) 2011 Published by Elsevier Ltd. on behalf of Acta Materialia Inc.

A study of cubic bismuth oxides of the type bi(26-X)m(X)O(40-delta) (m=ti, mn, fe, co, ni or pb) related to gamma-bi2O3

A structural investigation of cubic oxides (space group I23) of the formula Bi(26-x)M(x)O(40-delta) (M = Ti, Mn, Fe, Co, Ni and Pb) related to the Y-Bi2O3 phase has been carried out by the Rietveld profile analysis of high-resolution X-ray powder diffraction data in order to establish the cation distributions. Compositional dependence of the cation distribution has been examined in the case of Bi26-xCoxO40-delta (1 < x < 16). The study reveals that in Bi(26-X)M(X)O(40-delta) with M = Ti, Mn, Fe, Co or Pb, the M cations tend to occupy tetrahedral (2a) sites when x < 2 while the octahedral (24f) sites are shared by the excess Co or Ni cations with Bi atoms when x > 2. Also experimental magnetic moments of Mn, Co and Ni derivatives have been used to establish the valence state and distribution of these cations.

Influence of Bi 3+ ions in enhancing the magnitude of positive temperature coefficients of resistance in n-BaTiO3 ceramics

Bi3+ ions substituting at Ba-sites in a limited concentration range with another donor dopant occupying the Ti-sites in polycrystalline BaTiO3 enhanced the positive temperature coefficient of resistance (PTCR) by over seven orders of magnitude. These ceramics did not require normal post sinter annealing or a change to an oxygen atmosphere during annealing. These ceramics had low porosities coupled with better stabilities to large applied electric fields and chemically reducing atmospheres. Bi3+ ions limited the grain growth to less than 8 mum in size, they enhanced the concentration of acceptor-type trap centres at the grain-boundary-layer regions and maintained complete tetragonality at low grain sizes in BaTiO3 ceramics.

Synthesis of Cuprates of Perovskite Structure in the Ba-Pb-Cu-O, Ba-Bi-Cu-O, and Ba-Pb-Tl-Cu-O Systems: Possible High Tc Superconductivity in a Perovskite-like Phase in the Ba-Pb-Tl-Cu-O System

Cubic cuprates (a not, vert, similar 18.6 Å) with a BaCuO2-type structure were obtained in the Ba-Pb-Cu-O and Ba-Bi-Cu-O systems by the reaction of the component oxides at a high temperature (1370-1420 K), followed by quenching. By annealing these phases in oxygen at 1070-1120 K, perovskite-like phase (a not, vert, similar 4.3 Å) of the formulae BaPb1-xCuxO3-y and BaBi1-xCuxO3-y (0 < x ? 0.5) were obtained. A perovskite of nominal composition BaPb0.25Tl0.25 Cu0.5O3-y, prepared by a similar procedure, was found to be superconducting with a Tc of not, vert, similar 70 K.

Ionic conductivity, mechanical strength and Li-ion battery performance of mono-functional and bi-functional (''Janus'') ``soggy sand'' electrolytes

Influence of dispersion of uniformly sized mono-functional and bi-functional (''Janus'') particles on ionic conductivity of novel ``soggy sand'' electrolytes and its implications on mechanical strength and lithium-ion battery performance are discussed here.

Heterogeneous nucleation of nanometre-sized Bi particles embedded in a Zn matrix

It is argued that the nanometric dispersion of Bi in a Zn matrix is an ideal model system for heterogeneous nucleation experiments. The classical theory of heterogeneous nucleation with a hemispherical cap model is applied to analyse the nucleation data. It is shown that, unlike the results of earlier experiments, the derived site density for catalytic nucleation and contact angle are realistic and strongly suggest the validity of the classical theory. The surface energy between the 0001 plane of Zn and the <10(1)over bar 2> plane of Bi, which constitute the epitaxial nucleation interface, is estimated to be 39 mJ m(-2).

Molecular structure and reactions of 1,1 '-bi(acenaphthen-1-ylidene)-2,2 '-dione

The molecular structure of 1,1'-bi(acenaphthen-1-ylidene)-2,2'-dione 1, a potential building-block for the synthesis of fullerene fragments, has been investigated by X-ray crystallography and semi-empirical (AM1 and PM3) calculations. There is a good agreement between the calculated and crystal structure which is essentially planar and has E-configuration. In the solid state, molecules of 1 pack in an interesting manner as corrugated sheets sustained by a network of C-H ... O hydrogen bonds and resulting in the formation of tetrameric loops. While steric factors limit the reactivity of the carbonyl groups in 1, the ene double bond of the ene-dione moiety present in it exhibits propensity toward [4 + 2]-cycloadditions to furnish novel and highly compressed polycycles 8-10.

The melting and solidification of nanoscale Bi particles embedded in a glassy and crystalline matrix

We report the formation of an amorphous phase in nanosized Pi particles embedded in an Al-based glassy alloy matrix. High-resolution electron microscopy (HREM) has been used to show that the particles contain crystalline and amorphous portions. A depression of the melting point by more than 100 K of the crystalline portion of the Pi particles was found by differential scanning calorimetric studies and by in-situ electron microscopy using a heating stage. The same techniques established the absence of an amorphous phase in the particles when the matrix is crystallized. It is shown that the formation of the amorphous phase and the depression of the melting point cannot be explained by the pressure developed by the volume change during solidification in this constrained system.

Effect of granularity on the insulator-superconductor transition in ultrathin Bi films

We have studied the insulator-superconductor transition (IST) by tuning the thickness in quench-condensed Bi films. The resistive transitions of the superconducting films are smooth and can be considered to represent ''homogeneous'' films. The observation of an IST very close to the quantum resistance for pairs R-square(N) similar to h/4e(2) on several substrates supports this idea. The relevant length scales here are the localization length, and the coherence length. However, at the transition, the localization length is much higher than the superconducting coherence length, contrary to expectation for a "homogeneous" transition. This suggests the invalidity of a purely fermionic model for the transition. Furthermore, the current-voltage characteristics of the superconducting films are hysteretic, and show the films to be granular. The relevant energy scales here are the Josephson coupling energy and the charging energy. However, Josephson coupling energies (E-J) and the charging energies (E-c) at the IST, they are found to obey the relation E-j < E-c. This is again contrary to expectation, for the IST in a granular or inhomogeneous system. Hence, a purely bosonic picture of the transition is also inconsistent with our observations. We conclude that the IST observed in our experiments may be either an intermediate case between the fermioinc and bosonic mechanisms, or in a regime of charge and vortex dynamics for which a quantitative analysis has not yet been done.

Solution combustion synthesis of gamma(L)-Bi(2)MoO(6) and photocatalytic activity under solar radiation

The facile method of solution combustion was used to synthesize gamma(L)-Bi(2)MoO(6). The material was crystallized in a purely crystalline orthorhombic phase with sizes varying from 300 to 500 nm. Because the band gap was 2.51 eV, the degradation of wide variety of cationic and anionic dyes was investigated under solar radiation. Despite the low surface area (< 1 m(2)/g) of the synthesized material, gamma(L)-Bi(2)MoO(6) showed high photocatalytic activity under solar radiation due to its electronic and morphological properties. (C) 2011 Elsevier Ltd. All rights reserved.

Vortex dynamics and upper critical fields in ultrathin Bi films

Current-voltage (I-V) characteristics of quench condensed, superconducting, ultrathin Bi films in a magnetic field are reported. These I-V's show hysteresis for all films, grown both with and without thin Ge underlayers. Films on Ge underlayers, close to superconductor-insulator transition, show a peak in the critical current, indicating a structural transformation of the vortex solid. These underlayers, used to make the films more homogeneous, are found to be more effective in pinning the vortices. The upper critical fields (B-c2) of these films are determined from the resistive transitions in perpendicular magnetic field. The temperature dependence of the upper critical field is found to differ significantly from Ginzburg-Landau theory, after modifications for disorder.