A simple method of synthesis and optical properties of Mn doped ZnO nanocups

A combination of chemical and thermal annealing techniques has been employed to synthesize a rarely reported nanocup structure of Mn doped ZnO with good yield. Nanocup structures are obtained by thermally annealing the powder samples consisting of nanosheets, synthesized chemically at room temperature, isochronally in a furnace at 200-500 degrees C temperature range for 2 h. Strong excitonic absorption in the UV and photoluminescence (PL) emission in UV-visible regions are observed in all the samples at room temperature. The sample obtained at 300 degrees C annealing temperature exhibits strong PL emission in the UV due to near-band-edge emission along with very week defect related emissions in the visible regions. The synthesized samples have been found to be exhibiting stable optical properties for 10 months which proved the unique feature of the presented technique of synthesis of nanocup structures. (C) 2012 Elsevier B.V. All rights reserved.

Tailoring the optical properties of amorphous heavily Er3+-doped Ge-Ga-S thin films

This study deals with the influence of Er-doping level and thermal annealing on the optical properties of amorphous Ge-Ga-S thin films. Nominal compositions of (GeS2)(75)(Ga2S3)(25) doped with high concentrations of 2.1 and 2.4 mol% Er2S3 (corresponding to 1.2 and 1.4 at% Er, respectively) have been chosen for this work. The results have been related to those obtained for the un-doped samples. The values of the refractive index, the absorption coefficient and optical band gap have been determined from the transmittance data. It has been found that the optical band gap of un-doped and 2.1 mol% Er2S3-doped films slightly increases with annealing temperature, whereas at 2.4 mol% Er2S3-doping level it is decreased. The dependences of the optical parameters on the erbium concentration and effect of annealing in the temperature range of 100-200 degrees C have been evaluated and discussed in relation to possible structural changes.

Comparative study on optical properties of Se-Zn-In and Se-Zn-Te-In chalcogenide glasses

In contemporary world optoelectronics materials are used in daily life owing to its verity of applications. Utility of these materials makes them attractive for investigations. Specifically study regarding optical properties of recent developed materials is worth for technical uses. Therefore, this work demonstrates a comparative study of extinction coefficient (K), real dielectric (epsilon') and imaginary dielectric (epsilon `') constants, refractive index (n) and optical energy band gap (E-g) with structural unit < r > for Se98-xZn2Inx (0 <= X-In <= 10) and Se93-yZn2Te5Iny (0 <= Y-In <= 10) chalcogenide glasses. Fixed amount of Te with increasing In concentration as cost of Se is largely influence the optical parameters of the materials. Values of optical parameters are obtained higher and lower respectively at thresholds structural units values. This comparative study demonstrates that enhanced values of optical parameters have been obtained for Te containing Se-Zn-In glasses.

Synthesis, structural and optical properties of nanocrystalline Ba2NaNb5O15

Fine powders comprising nanocrystallites of barium sodium niobate, Ba2NaNb5O15 (BNN) were obtained via a citrate assisted sol-gel route at a much lower temperature than that of the conventional solid-state reaction route. The phase evolution of BNN as a function of temperature was investigated by thermogravimetric analysis (TGA), differential thermal analysis (DTA), Fourier transform infrared spectroscopy (FTIR) and X-ray powder diffraction (XRD). DTA data followed by XRD studies confirmed the BNN formation temperature to be around 923 K. The as-synthesized powders heat-treated at 923 K/10 h attained an orthorhombic structure akin to that of the parent BNN phase. Transmission electron microscopy revealed that the nanocrystallites are associated with dislocations. The optical band gap was calculated using the Kubelka-Munk function. These nanocrystallites exhibited strong visible photoluminescence (PL) at room temperature. The PL mechanism was explained by invoking the dielectric confinement effect, defect states and generation of self-trapped excitons.

Nonlinear optical second harmonic generation in ZnS quantum dots and observation on optical properties of ZnS/PMMA nanocomposites

ZnS quantum dots (QDs) of different sizes are synthesized by a simple chemical co-precipitation method at room temperature, by varying pH value of the reaction mixture. Samples are characterized by an X-ray diffractometer, transmission electron microscope, energy-dispersive X-ray analysis, etc. Linear optical properties, including UV-visible absorption and photoluminescence emission characteristics, of as-prepared QDs are measured. Size dependent nonlinear optical property, such as second harmonic generation (SHG) of 1064 nm Nd:YAG laser fundamental radiation in the synthesized ZnS QDs, is reported for the first time, to the best of our knowledge, by using the standard Kurtz-Perry powder method. In not to study the possibility of the synthesized ZnS QDs in different device applications ZnS/PMMA (polymethylmethacrylate) nanocomposites are also synthesized. The presence of weak chemical interaction between the polymer matrix and ZnS QDs is confirmed by Fourier transform infrared spectroscopy. Thermal properties of the nanocomposites are studied by differential scanning calorimetry and thermo-gravimetric analysis techniques, which show that the composites are stable up to similar to 300 degrees C temperature. (C) 2013 Elsevier B.V. All rights reserved.

Ferroelectric and optical properties of Ba5Li2Ti2Nb8O30 ceramics potential for memory applications

Giant grained (42 mu m) translucent Ba5Li2Ti2Nb8O30 ceramic was fabricated by conventional sintering technique using the powders obtained via solid state reaction route. These samples were confirmed to possess tetragonal tungsten bronze structure (P4bm) at room temperature. The scanning electron microscopy established the average grain size to be close to 20 mu m. The photoluminescence studies carried out on these ceramics indicated sharp emission bands around 433 and 578 nm at an excitation wavelength of 350 nm which were attributed to band-edge emission as the band gap was 2.76 eV determined by Kubelka-Munk function. The dielectric properties of these ceramics were studied over wide frequency range (100-1 MHz) at room temperature. The decrease in dielectric constant with frequency could be explained on the basis of Koops theory. The dielectric constant and the loss were found to decrease with increasing frequency. The Curie temperature was confirmed to be similar to 370 A degrees C based on the dielectric anomaly observed when these measurements were carried out over a temperature range of 30-500 A degrees C. This shows a deviation from Curie-Weiss behaviour and hence an indicator of the occurrence of disordering in the system, the gamma = 1.23 which confirms the diffuse ferroelectric transition. These ceramics at room temperature exhibited P-E hysteresis loops, though not well saturated akin to that of their single crystalline counterparts. These are the suitable properties for ferroelectric random access memory applications.

Effect of film thickness and annealing on optical properties of TiO2 thin films and electrical characterization of MOS capacitors

Titanium dioxide (TiO2) thin films were deposited on glass and silicon (100) substrates by the sol-gel method. The influence of film thickness and annealing temperature on optical transmittance/reflectance of TiO2 films was studied. TiO2 films were used to fabricate metal-oxide-semiconductor capacitors. The capacitance-voltage (C-V), dissipation-voltage (D-V) and current-voltage (I-V) characteristics were studied at different annealing temperatures and the dielectric constant, current density and resistivity were estimated. The loss tangent (dissipation) increased with increase of annealing temperature.

Effect of compositional variations on the optical properties of SbxSe60-xS40 thin films

Thin films of SbxSe60-xS40( x= 10, 20, 30, and 40) were deposited by thermal evaporation from the prepared bulk materials on glass substrates held at room temperature. The film compositions were confirmed by using energy dispersive X-ray spectroscopy. X-ray diffraction studies revealed that all the as- deposited films have amorphous structure. The optical constants ( n, k, E-g, E-e, B-1/2) of the films were determined from optical transmittance data, in the spectral range 500-1200 nm, using the Swanepoel method. An analysis of the optical absorption spectra revealed an Urbach's tail in the low absorption region, while in the high absorption region an indirect band gap characterizes the films with different compositions. It was found that the optical band gap energy decreases as the Sb content increases. Finally, in terms of the chemical bond approach, degree of disorderness has been applied to interpret the decrease in the optical gap with increasing Sb content in SbxSe60-xS40 thin films. The changes in X-ray photo electron spectra and Raman shift in the films show compositional dependence. (C) 2015 Elsevier B.V. All rights reserved.

Photo induced effects on the optical properties of As20Sb20S60 thin films

The thermally evaporated As20Sb20S60 amorphous film of 800 nm thickness was subjected to light exposure for photo induced studies. The as-prepared and illuminated thin films were studied by X-ray diffraction, Fourier Transform Infrared Spectroscopy and X-ray Photoelectron Spectroscopy and Raman spectroscopy. The optical band gap was reduced due to photo induced effects along with the increase in disorder. These optical properties changes are due to the change of homopolar bond densities. The core level peak shifting in XPS spectra and Raman shift supports the optical changes happening in the film due to light exposure.

Doping effect of Ag+, Mn2+ ions on Structural and Optical Properties of ZnO nanoparticles

Pure ZnO and co-doped (Mn, Ag) ZnO nanoparticles have been successfully prepared by chemical co-precipitation method without using a capping agent. X-ray diffraction (XRD) studies confirms the presence of wurtzite (hexagonal) crystal structure similar to undoped ZnO, suggesting that doped Mn, Ag ions are substituted to the regular Zn sites. The morphology of the samples were studied by scanning electron microscopy (SEM). The chemical composition of pure and co-doped ZnO nanoparticles were characterized by energy dispersive X-ray analysis spectroscopy (EDAX). Optical absorption properties were determined by UV-vis Diffuse Reflectance Spectrophotometer. The incorporation of Ag+, Mn2+ in the place of Zn2+ provoked to decrease the size of nanocrystals as compared to pure ZnO. Optical absorption measurements indicates blue shift in the absorption band edge upon Ag, Mn ions doped ZnO nanoparticles.

Effect of laser irradiation on the optical properties of As40Sb15Se45 chalcogenide thin films

The exposure with band gap light of thermally evaporated As40Sb15Se45 amorphous film of 800 nm thickness, were found to be accompanied by optical changes. The as-prepared and illuminated thin films were studied by X-ray diffraction, Fourier Transform Infrared Spectroscopy and X-ray Photoelectron Spectroscopy and Raman spectroscopy. The optical band gap was reduced due to photo induced effects along with the increase in disorder. These optical properties changes are due to the change of homopolar bond densities. The core level peak shifting in XPS spectra and Raman shift supports the optical changes happening in the film due to light exposure.

Enhanced nonlinear optical properties of graphene oxide-silver nanocomposites measured by Z-scan technique

Nonlinear optical properties (NLO) of a graphene oxide-silver (GO-Ag) nanocomposite have been investigated by the Z-scan setup at Q-switched Nd:YAG laser second harmonic radiation i.e., at 532 nm excitation in a nanosecond regime. A noteworthy enhancement in the NLO properties in the GO-Ag nanocomposite has been reported in comparison with those of the synthesized GO nanosheet. The extracted value of third order nonlinear susceptibility (chi(3)), at a peak intensity of I-0 = 0.2 GW cm(-2), for GO-Ag has been found to be 2.8 times larger than that of GO. The enhancement in NLO properties in the GO-Ag nanocomposite may be attributed to the complex energy band structures formed during the synthesis which promote resonant transition to the conduction band via surface plasmon resonance (SPR) at low laser intensities and excited state transition (ESA) to the conduction band of GO at higher intensities. Along with this photogenerated charge carriers in the conduction band of silver or the increase in defect states during the formation of the GO-Ag nanocomposite may contribute to ESA. Open aperture Z-scan measurement indicates reverse saturable absorption (RSA) behavior of the synthesized nanocomposite which is a clear indication of the optical limiting (OL) ability of the nanocomposite.

Growth and optical properties of peculiar ZnO tetrapods

Regular ZnO tetrapods with different morphologies have been obtained on Si(100) substrate via the chemical vapour deposition approach. Varying the growth temperature and gas rate, we have obtained different structured ZnO materials: tetrapods with a large hexagonal crown, a flat top and a small hexagonal crown. The results suggest that these tetrapods are all single crystals with a wurtzite structure that grow along the (0001) direction. However, photoluminescence spectra shows that their optical properties are quite different: for those with large hexagonal crown, the green emission overwhelms that of the near band-edge (NBE) ultraviolet (UV) peak, while others have only a strong NBE UV peak at ~386 nm.

Thermal, structural and optical properties of NiOx thin films deposited by reactive dc-magnetron sputtering

The NiOx thin films were deposited by reactive dc-magnetron sputtering from a nickel metal target in Ar + O-2 with the relative O-2 content 5%. The as-deposited NiOx, thin films could represent a two-component system comprising crystalline NiO particles dispersed in an amorphous Ni2O3. Decomposition temperature of the as-deposited NiO, thin films was at about 263 degrees C. After annealed at 400 degrees C for 30 min in air, the surface morphology of the films became very rough due to the decomposition of the Ni2O3, leading to the changes of the optical properties of the NiO, thin films. The reflectivity of the films annealed at 400 degrees C was lower than that of the as-deposited one and the optical contrast was 52% at 405 nm. (c) 2006 Elsevier B.V. All rights reserved.