982 resultados para photo-induced anisotropy


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The effect of irradiation (UV-visible light) on a nematic liquid crystal doped with a photoactive azobenzene derivative was investigated. The selective irradiation results in either an E implies Z or Z implies E isomerization of the azobenzene unit. The effect of the isomerization is to cause a reversible depression of the liquid crystal to isotropic (LC implies l) phase transition temperature of the doped mixture, which can be monitored optically as an isothermal phase transition. This depression also results in a biphasic liquid crystal+isotropic region which is discussed. The authors investigate the cause and magnitude of the phase depression as a function of the amount of doped 4-butyl-4'-methoxyazobenzene (photoactive unit) in 4-cyano-4'-n-pentylbiphenyl (liquid crystal unit), and as a function of the percentage conversion of E implies Z (caused by isomerization) in the azobenzene. The photostationary state of the doped mixtures achieved by Z implies E isomerization is considered and its effect upon the transition temperature of the mixture and response time of the system is discussed. They discuss the implications of the photostationary state with regards to the reversibility of the photo-induced phase transition and hence potential applications.

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Weak photo-induced chemiluminescence (PICL) emission is observed when polymers are exposed to UVA or visible light. The presence of dyes can either increase PICL intensity via Type I photosensitisation which generates polymer free radicals, or reduce it via photo-protection. PICL studies on the eight Blue Wool Standards (BWSs) that are used commercially as lightfastness standards show higher PICL intensity from the least photostable BWSs that use triphenylmethane dyes and lower intensity from more photostable BWSs using UVA and visible wavelengths. The relative PICL intensities do not correlate in a stepwise manner with lightfastness ratings of the BWSs. However dye/polymer combinations that emit high levels of PICL relative to the undyed material are unlikely to have acceptable lightfastness. The xanthene dyes fluorescein and eosin Y are more strongly photosensitising than triphenylmethane dyes on wool and both produce higher PICL emission than undyed wool when irradiated with visible light.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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A variation of photoconductivity excitation with wavelength is applied to Si-doped Al0.56Ga0.44As (indirect bandgap material) for a wide range of temperature. The lower the temperature the lower the photocurrent below 70 K. In the range 13-30 K there is a decrease in the photoconductivity spectrum slightly above the bandgap transition energy, followed by another increase in the conductivity. We interpret these results in the light of existing models and confirm the trapping by the X-valley effective mass state. which is responsible for attenuation of persistent photoconductivity below 70 K. A DX0 intermediate state which has non-negligible lifetime is proposed as responsible for the decrease in the photoconductivity with about 561 nm of wavelength of exciting light, in the investigated 13-30 g range.

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Investigations of photo-induced structural transformations (PST) and related changes of optical parameters in amorphous chalcogenide layers were further developed towards the establishment of their dependence on the compositional modulation of the material at nanoscale-dimensions (similar to3-10 nm) and possible improvement of optical recording parameters as well. Besides the known amorphous-amorphous PST, photo-stimulated interdiffusion and crystallization in multilayer structures were found as a useful method for amplitude-phase optical relief formation. The last two types of PST were influenced by size restrictions and efficiently operated by the composition and by the modulation period of the layered nanocomposite. Experimental evidences were obtained in Se-, AsSe-, Se0.4Te0.6-containing layered or quasi zero-dimensional structures based on As2S3 or SiOx and MgF2 matrix. Comparison was made with As2S3- and GeS2-based multicomponent layers, containing Se, Te and Ga. (C) 2004 Elsevier B.V. All rights reserved.

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Investigations of photo-induced structural transformations (PST) and related changes of optical parameters in the light-sensitive amorphous chalcogenides were extended to composite layers, which consist of a wide band-gap material and an active material, Se60Te40 with a smaller band gap. Photo-stimulated interdiffusion and/or crystallization in layered Se0.6Tc0.4/As0.6Se0.94 and Se0.6Te0.4/SiOx were investigated with respect to their dependence on the compositional modulation of the multilayer at scale-dimensions (similar to3-10nm). It was established that PST due to the interdiffusion and crystallization can be efficiently operated by the composition of the adjacent layers of the multilayer which results in the change of the transformation rate and of the optical relief type (positive or negative). The comparison with a single Se0.6Te0.4 layer and with the known data for amorphous-Se/As2S3 multilayers supports the advantages of composite layers for amplitude-phase optical recording. (C) 2004 Published by Elsevier B.V.

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The present paper focuses on the structural, electronic, and compositional properties of Ge25Ga10S65 glasses before and after UV illumination in air using X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) techniques. The XPS Ge 3d spectra reveal the existence of Ge-O bonds in the surface region of illuminated glass. In the case of this sample, XAS O K-edge spectra showed the formation of an enriched region of oxygen atoms in the glass bulk, indicating a different bonding structure of oxygen at the surface and in the bulk of the glass. Moreover, the structural changes that occur after UV illumination in the glass sample are identified as the formation of a homogeneous germanium oxide surface layer followed by an intermediary Ge25Ga10S65-yOz subsurface region. (c) 2005 Elsevier B.V. All rights reserved.

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We investigated the alignment induced on a nematic liquid crystal (LC) by a photo-aligned polymer film with azo-dye side groups. The orientation of the LC molecules can be manipulated in a reversible manner by irradiating the film with polarized light. We analyzed the competition between the orientation induced by the main chain, through rubbing of the film and that induced by the photo-aligned polymer. Anchoring strength for the different processing conditions are reported. The changes in film morphology caused by rubbing or photo-alignment could be captured by atomic force microscopy. The reversibility of the photo-induced alignment and the competition between the two anchoring mechanisms may allow recording and erasing of information in a LC display.

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The interactions governing adsorption of layer-by-layer (LBL) films from an azopolymer, PS-119(R), and poly(allylamine hydrochloride) (PAH) have been controlled by modifying the pH of the solutions used to form the films. The thickness per bilayer was varied by one order of magnitude, from 10 to 240 A, as the pH changed from 4 to 10. Thick layers were formed at higher pHs because in this case the PAH is only partially charged adopting a loopy conformation. This change in molecular conformation caused the kinetics of isomerization and mass transport to be much slower than at lower pHs. The writing time defined as the time to achieve 50% of maximum birefringence dropped from 110 to 18 min for films prepared from solutions with pH 10 and pH 4, respectively. This decrease is probably due to the higher free volume for isomerization in the films prepared at lower pHs, in which PAH molecules are less coiled than at higher pHs. For the same reason, the rate of inscription of surface-relief gratings with an interference pattern of p-polarized light was also much slower at higher pHs. (C) 2003 Elsevier B.V. All rights reserved.

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We present conductance as function of temperature (G×T) under influence of monochromatic light in the range 0.5-1.5 μm for direct as well as indirect bandgap n-type AlxGa1-xAs. Results obtained below 60 K in indirect bandgap sample show the presence of another level of trapping, besides the DX centre, probably a X-valley effective mass state. In direct bandgap samples, these G×T curves show that above bandgap light increases conductivity to higher values than at room temperature and below bandgap light is not enough to avoid trapping. Photoconductivity spectra in indirect bandgap AlxGa1-xAs show that above ≅120 K, the absence of persistent photoconductivity contributes for a very clean spectrum. The mobility of AlxGa1-xAs is modelled considering dipole scattering. Data of transient decay of persistent photoconductivity is simulated using this approach.