959 resultados para 020406 Surfaces and Structural Properties of Condensed Matter


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Various forms of hydrogenated graphene have been produced to date by several groups, while the synthesis of pure graphane has not been achieved yet. The study of the interface between graphane, in all its possible hydrogenation configurations, and catalyst metal surfaces can be pivotal to assess the feasibility of direct CVD growth methods for this material. We investigated the adhesion of graphane to a Cu(111) surface by adopting the vdW-DF2-C09 exchange-correlation functional, which is able to describe dispersion forces. The results are further compared with the PBE and the LDA exchange-correlation functionals. We calculated the most stable geometrical configurations of the slab/graphane interface and evaluated how graphane's geometrical parameters are modified. We show that dispersion forces play an important role in the slab/graphane adhesion. Band structure calculations demonstrated that in the presence of the interaction with copper, the band gap of graphane is not only preserved, but also enlarged, and this increase can be attributed to the electronic charge accumulated at the interface. We calculated a substantial energy barrier at the interface, suggesting that CVD graphane films might act as reliable and stable insulating thin coatings, or also be used to form compound layers in conjunction with metals and semiconductors.

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Schottky barrier solar cells based on graphene/n-silicon heterojunction have been fabricated and characterized and the effect of graphene molecular doping by HNO3 on the solar cells performances have been analyzed. Different doping conditions and thermal annealing processes have been tested to asses and optimize the stability of the devices. The PCE of the cells increases after the treatment by HNO3 and reaches 5% in devices treated at 200 °C immediately before the exposition to the oxidant. Up to now our devices retain about 80% of efficiency over a period of two weeks, which represents a good stability result for similar devices.

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We propose the use of solution-processed molybdenum disulfide (MoS2) flakes as hole transport layer (HTL) for metal-organic perovskite solar cells. MoS2 bulk crystals are exfoliated in 2-propanol and deposited on perovskite layers by spray coating. We fabricated cells with glass/FTO/compact-TiO2/mesoporous-TiO2/CH3NH3PbI3/spiro- OMeTAD/Au structure and cells with the same structure but with MoS2 flakes as HTL instead of spiro-OMeTAD, the most widely used HTL. The electrical characterization of the cells with MoS2 as HTL show promising power conversion efficiency -η- of 3.9% with respect to cells with pristine spiro-OMeTAD (η=3.1%). Endurance test on 800-hour shelf life has shown higher stability for the MoS2–based cells (ΔPCE/PCE=-17%) with respect to the doped spiro-OMeTAD-based one (ΔPCE/PCE =-45%). Further improvements are expected with the optimization of the MoS2 deposition process

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The specific surface area (SSA) of single-walled carbon nanotubes (SWNTs) has been measured by different groups. Fujiwara et al. measured the SSA of SWNT bundles by using nitrogen and oxygen as adsorbates, and found that the SSA from O2-adsorption was 6.6% larger than that from N2-adsorption for the same SWNT sample [1]. Also Wei et al. [2] measured the SSA of HiPco SWNTs by using O2, N2 and Ar, and found that, for the same samples, Vm(Ar) > Vm(O2) > Vm(N2), here Vm is the monolayer adsorption capacity at the standard conditions of temperature and pressure (STP). Those research results indicate that, for the same SWNT sample, its measured surface area depends on the employed adsorbate.

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Controlled synthesis of carbon nanotubes (CNTs) is highly desirable for nanoelectronic applications. To date, metallic catalyst particles have been deemed unavoidable for the nucleation and growth of any kind of CNTs. Ordered arrays of nanotubes have been obtained by controlled deposition of the metallic catalyst particles. However, the presence of metal species mixed with the CNTs represents a shortcoming for most electronic applications, as metal particles are incompatible with silicon semiconductor technology. In the present paper we report on a metal-catalyst-free synthesis of CNTs, obtained through Ge nanoparticles on a Si(001) surface patterned by nanoindentation. By using acetylene as the carbon feed gas in a low-pressure Chemical Vapor Deposition (CVD) system, multi-walled carbon nanotubes (MWNT) have been observed to arise from the smallest Ge islands. The CNTs and the Ge three-dimensional structures have been analysed by SEM, EDX and AFM in order to assess their elemental features and properties. EDX and SEM results allow confirmation of the absence of any metallic contamination on the surface, indicating that the origin of the CNT growth is due to the Ge nanocrystals.

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Atomic scale periodic ripples that extend for several nanometers on the surface of adjacent graphitic grains have been observed for the first time on highly ordered pyrolitic graphite by UHV-STM. The ripples emanate from a grain boundary, and are explained in terms of a mechanical deformation due to the elastic strain accumulated along the GB, which is relieved out-of-plane in the topmost graphene layer. We present a molecular dynamics model that accounts for the formation of similar ripples as result of the lattice mismatch induced by two different grain orientations.

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Flexible graphene-based thin film supercapacitors were made using carbon nanotube (CNT) films as current collectors and graphene films as electrodes. The graphene sheets were produced by simple electrochemical exfoliation, while the graphene films with controlled thickness were prepared by vacuum filtration. The solid-state supercapacitor was made by using two graphene/CNT films on plastic substrates to sandwich a thin layer of gelled electrolyte. We found that the thin graphene film with thickness <1 μm can greatly increase the capacitance. Using only CNT films as electrodes, the device exhibited a capacitance as low as ~0.4 mF cm−2, whereas by adding a 360 nm thick graphene film to the CNT electrodes led to a ~4.3 mF cm−2 capacitance. We experimentally demonstrated that the conductive CNT film is equivalent to gold as a current collector while it provides a stronger binding force to the graphene film. Combining the high capacitance of the thin graphene film and the high conductivity of the CNT film, our devices exhibited high energy density (8–14 Wh kg−1) and power density (250–450 kW kg−1).

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Based on a self-similar array model of single-walled carbon nanotubes (SWNTs), the pore structure of SWNT bundles is analyzed and compared with that obtained from the conventional triangular model and adsorption experimental results. In addition to the well known cylindrical endo-cavities and interstitial pores, two types of newly defined pores with diameters of 2-10 and 8-100 nm are proposed, inter-bundle pores and inter-array pores. In particular, the relationship between the packing configuration of SWNTs and their pore structures is systematically investigated. (c) 2005 American Institute of Physics.

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Thin films of ZrO2 were prepared by reactive magnetron sputtering. Annealing of the films exhibited a drastic change in the properties due to improved crystallinity and packing density. The root mean square roughness of the sample observed from atomic force microscope is about 5.75 nm which is comparable to the average grain size of the thin film which is about 6 nm obtained from X-ray diffraction. The film annealed at 873 K exhibits an optical band gap of around 4.83 eV and shows +4 oxidation state of zirconium indicating fully oxidized zirconium, whereas higher annealing temperatures lead to oxygen deficiency in the films and this is reflected in their properties. A discontinuity in the imaginary part of the AC conductivity was observed in the frequency range of tens of thousands of Hz, where as, the real part does not show such behavior.

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We describe an empirical, self-consistent, orthogonal tight-binding model for zirconia, which allows for the polarizability of the anions at dipole and quadrupole levels and for crystal field splitting of the cation d orbitals, This is achieved by mixing the orbitals of different symmetry on a site with coupling coefficients driven by the Coulomb potentials up to octapole level. The additional forces on atoms due to the self-consistency and polarizabilities are exactly obtained by straightforward electrostatics, by analogy with the Hellmann-Feynman theorem as applied in first-principles calculations. The model correctly orders the zero temperature energies of all zirconia polymorphs. The Zr-O matrix elements of the Hamiltonian, which measure covalency, make a greater contribution than the polarizability to the energy differences between phases. Results for elastic constants of the cubic and tetragonal phases and phonon frequencies of the cubic phase are also presented and compared with some experimental data and first-principles calculations. We suggest that the model will be useful for studying finite temperature effects by means of molecular dynamics.

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The results of the investigation of the magnetic and structural properties of the alloy system Fe0.75–xSi0.25Sbx, where x = 0, 0.05, 0.1, 0.15, 0.2, and 0.25 synthesized by mechanical alloying followed by heat treatment are described. The x-ray diffraction reveals that all samples crystallize in the DO3-type cubic phase structure. Substituting Fe by Sb led to a de-crease in the lattice constant and the unit cell volume. The magnetic properties are investigated by vibrating sample magnetometer and show that all the samples are ferromagnetically ordered at room temperature. The Curie temperature is found to decrease linearly from (850 ± 5) K for the parent alloy to (620 ± 5) K for the alloyith x = 0.25. The satura-tion magnetizations at room temperature and at 100 K are found to decrease with increasing the antimony concentration. The above results indicate that Sb dissolves in the cubic structure of this alloy system.

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This work involved an investigation to ascertain how the substitution of nickel ions for zinc ions affects the structural, morphological and magnetic properties of NiFe(2)O(4) ferrite samples. Ni(1-x)Zn(x)Fe(2)O(4) (x = 0.0, 0.3 0.5, 0.7) powders were prepared by combustion reaction and characterized structurally by X-ray diffraction. The specific surface area of the powders was determined by the nitrogen adsorption method (BET). Magnetization measurements were taken using an alternative gradient magnetometer (AGM), which revealed that the powders prepared by combustion reaction resulted in nanosized particles with a particle size of 18-27 nm. The crystallite size and lattice parameter increased as the concentration of Zn increased. Moreover, augmenting the Zn content in the NiFe(2)O(4) ferrite increased the saturation magnetization and coercive field. (C) 2008 Elsevier B.V. All rights reserved.

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The structural and electronic properties of ZnO (10 (1) over bar0) and (11 (2) over bar0) surfaces were investigated by means of density functional theory applied to periodic calculations at B3LYP level. The stability and relaxation effects for both surfaces were analyzed. The electronic and energy band properties were discussed on the basis of band structure as well as density of states. There is a significant relaxation in the (10 (1) over bar0) as compared to the (11 (2) over bar0) terminated surfaces. The calculated direct gap is 3.09, 2.85, and 3.09 eV for bulk, (10 (1) over bar0), and (11 (2) over bar0) surfaces, respectively. The band structures for both surfaces are very similar.

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Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence proccsses than that of the flat film.

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Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence proccsses than that of the flat film.