Karnaugh map synthesis of multigate threshold networks

It has been shown in an earlier paper that I-realizability of a unate function F of up to six variables corresponds to ' compactness ' of the plot of F on a Karnaugh map. Here, an algorithm has been presented to synthesize on a Karnaugh map a non-threahold function of up to Bix variables with the minimum number of threshold gates connected in cascade. Incompletely specified functions can also be treated. No resort to inequalities is made and no pre-processing (such as positivizing and ordering) of the given switching function is required.

The hardness of approximating the boxicity, cubicity and threshold dimension of a graph

A k-dimensional box is the Cartesian product R-1 X R-2 X ... X R-k where each R-i is a closed interval on the real line. The boxicity of a graph G, denoted as box(G), is the minimum integer k such that G can be represented as the intersection graph of a collection of k-dimensional boxes. A unit cube in k-dimensional space or a k-cube is defined as the Cartesian product R-1 X R-2 X ... X R-k where each R-i is a closed interval oil the real line of the form a(i), a(i) + 1]. The cubicity of G, denoted as cub(G), is the minimum integer k such that G can be represented as the intersection graph of a collection of k-cubes. The threshold dimension of a graph G(V, E) is the smallest integer k such that E can be covered by k threshold spanning subgraphs of G. In this paper we will show that there exists no polynomial-time algorithm for approximating the threshold dimension of a graph on n vertices with a factor of O(n(0.5-epsilon)) for any epsilon > 0 unless NP = ZPP. From this result we will show that there exists no polynomial-time algorithm for approximating the boxicity and the cubicity of a graph on n vertices with factor O(n(0.5-epsilon)) for any epsilon > 0 unless NP = ZPP. In fact all these hardness results hold even for a highly structured class of graphs, namely the split graphs. We will also show that it is NP-complete to determine whether a given split graph has boxicity at most 3. (C) 2010 Elsevier B.V. All rights reserved.

Analytical modeling of quantum threshold voltage for triple gate MOSFET

In this work a physically based analytical quantum threshold voltage model for the triple gate long channel metal oxide semiconductor field effect transistor is developed The proposed model is based on the analytical solution of two-dimensional Poisson and two-dimensional Schrodinger equation Proposed model is extended for short channel devices by including semi-empirical correction The impact of effective mass variation with film thicknesses is also discussed using the proposed model All models are fully validated against the professional numerical device simulator for a wide range of device geometries (C) 2010 Elsevier Ltd All rights reserved

Effects of temper level on the dependence of fatigue crack growth threshold and crack closure on the prior austenitic grain size

An attempt has been made to systematically investigate the effects of microstructural parameters, such as the prior austenite grain size (PAGS), in influencing the resistance to fatigue crack growth (FCG) in the near-threshold region under three different temper levels in a quenched and tempered high-strength steel. By austenitizing at various temperatures, the PAGS was varied from about 0.7 to 96 μm. The microstructures with these grain sizes were tempered at 200 °C, 400 °C, and 530 °C and tested for fatigue thresholds and crack closure. It has been found that, in general, three different trends in the dependence of both the total threshold stress intensity range, ΔK th , and the intrinsic threshold stress intensity range, ΔK eff, th , on the PAGS are observable. By considering in detail the factors such as cyclic stress-strain behavior, environmental effects on FCG, and embrittlement during tempering, the present observations could be rationalized. The strong dependence of ΔK th and ΔK eff, th on PAGS in microstructures tempered at 530 °C has been primarily attributed to cyclic softening and thereby the strong interaction of the crack tip deformation field with the grain boundary. On the other hand, a less strong dependence of ΔK th and ΔK eff, th on PAGS is suggested to be caused by the cyclic hardening behavior of lightly tempered microstructures occurring in 200 °C temper. In both microstructures, crack closure influenced near-threshold FCG (NTFCG) to a significant extent, and its magnitude was large at large grain sizes. Microstructures tempered at the intermediate temperatures failed to show a systematic variation of ΔKth and ΔKeff, th with PAGS. The mechanisms of intergranular fracture vary between grain sizes in this temper. A transition from “microstructure-sensitive” to “microstructure-insensitive” crack growth has been found to occur when the zone of cyclic deformation at the crack tip becomes more or less equal to PAGS. Detailed observations on fracture morphology and crack paths corroborate the grain size effects on fatigue thresholds and crack closure.

Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor

In this paper, a physically based analytical quantum linear threshold voltage model for short channel quad gate MOSFETs is developed. The proposed model, which is suitable for circuit simulation, is based on the analytical solution of 3-D Poisson and 2-D Schrodinger equation. Proposed model is fully validated against the professional numerical device simulator for a wide range of device geometries and also used to analyze the effect of geometry variation on the threshold voltage.

Threshold behaviour in the nonisothermal properties of Ge-Sb-Se glasses

Differential scanning calorimetry studies have been performed on GexSb5Se95-x (12.5≤x≤35) and GexSb10Se90-x (10≤x≤32.5) glasses. The observed dependence of the glass transition temperature on the mean coordination number up to =2.60 and the maxima in the glass transition temperature and the activation energy of crystallisation at =2.65 have been interpreted in terms of the mechanical and chemical thresholds occuring near these compositions.

Estimating the Threshold Surface Density of Gp120-CCR5 Complexes Necessary for HIV-1 Envelope-Mediated Cell-Cell Fusion

Reduced expression of CCR5 on target CD4(+) cells lowers their susceptibility to infection by R5-tropic HIV-1, potentially preventing transmission of infection and delaying disease progression. Binding of the HIV-1 envelope (Env) protein gp120 with CCR5 is essential for the entry of R5 viruses into target cells. The threshold surface density of gp120-CCR5 complexes that enables HIV-1 entry remains poorly estimated. We constructed a mathematical model that mimics Env-mediated cell-cell fusion assays, where target CD4(+)CCR5(+) cells are exposed to effector cells expressing Env in the presence of a coreceptor antagonist and the fraction of target cells fused with effector cells is measured. Our model employs a reaction network-based approach to describe protein interactions that precede viral entry coupled with the ternary complex model to quantify the allosteric interactions of the coreceptor antagonist and predicts the fraction of target cells fused. By fitting model predictions to published data of cell-cell fusion in the presence of the CCR5 antagonist vicriviroc, we estimated the threshold surface density of gp120-CCR5 complexes for cell-cell fusion as similar to 20 mu m(-2). Model predictions with this threshold captured data from independent cell-cell fusion assays in the presence of vicriviroc and rapamycin, a drug that modulates CCR5 expression, as well as assays in the presence of maraviroc, another CCR5 antagonist, using sixteen different Env clones derived from transmitted or early founder viruses. Our estimate of the threshold surface density of gp120-CCR5 complexes necessary for HIV-1 entry thus appears robust and may have implications for optimizing treatment with coreceptor antagonists, understanding the non-pathogenic infection of non-human primates, and designing vaccines that suppress the availability of target CD4(+)CCR5(+) cells.

Low threshold ovonic switching in a-Si:H/InSb heterostructures

a-Si:H/InSb structures have been fabricated by glow discharge deposition of a-Si on bulk InSb substrates in hydrogen atmosphere. The structure shows interesting switching properties, toggling between a high resistance and a conducting state with OFF to ON resistance ratio of 10(6) at remarkably low threshold voltages of 0.3 V at room temperature. The low threshold voltage for this structure, as compared to the higher switching threshold of about 30 V for other a-Si based structures, has been achieved by the use of InSb as a substrate, capable of high carrier injection. (C) 1997 Published by Elsevier Science Ltd.

In-situ power monitoring scheme and its application in dynamic voltage and threshold scaling for digital CMOS integrated circuits

An in-situ power monitoring technique for Dynamic Voltage and Threshold scaling (DVTS) systems is proposed which measures total power consumed by load circuit using sleep transistor acting as power sensor. Design details of power monitor are examined using simulation framework in UMC 90nm CMOS process. Experimental results of test chip fabricated in AMS 0.35µm CMOS process are presented. The test chip has variable activity between 0.05 and 0.5 and has PMOS VTH control through nWell contact. Maximum resolution obtained from power monitor is 0.25mV. Overhead of power monitor in terms of its power consumption is 0.244 mW (2.2% of total power of load circuit). Lastly, power monitor is used to demonstrate closed loop DVTS system. DVTS algorithm shows 46.3% power savings using in-situ power monitor.

Composition tunable memory and threshold switching in Al20As xTe80− x semiconducting glasses

I-V studies indicate a composition dependent switching behavior (Memory or Threshold) in bulk Al20AsxTe80−x glasses, which is determined by the coordination and composition of aluminum. Investigations on temperature and thickness dependence of switching and structural studies on switched samples suggest thermal and electronic mechanisms of switching for the memory and threshold samples, respectively. The present results also show that these samples have a wider composition range of threshold behavior with lower threshold voltages compared to other threshold samples.

Threshold-like features in the magnetic response of iron-filled multi-walled carbon nanotube and polymer composite

The magnetic properties of iron-filled multi-walled carbon nanotubes dispersed in polystyrene (Fe-MWNT/PS) have been investigated as a function of Fe-MWNT concentration (0.1-15 wt%) from 300 to 10 K. Electron microscopy studies indicate that Fe nanorods (aspect ratio similar to 5) remain trapped at various lengths of MWNT and are thus, prevented from oxidation as well as aggregation. The magnetization versus applied field (M-H loop) data of 0.1 wt% of Fe-MWNTs in PS show an anomalous narrowing at low temperatures which is due to the significant contribution from shape anisotropy of Fe nanorods. The remanence shows a threshold feature at 1 wt%. The enhanced coercivity shows a maximum at 1 wt% due to the dominant dipolar interactions among Fe nanorods. Also the squareness ratio shows a maximum at 1 wt%.