Modelling of the influence of the layer pollution thickness in high voltage polluted insulators

An experimental model and a mathematical model with the introduction of a ramp in the channel of Obenaus model are presented. The aim is to present a better reproduction of the real layer pollution deposited on the HV insulators. This better reproduction is obtained from two types of thickness variation: the introduction of a ramp (soft variation) and the introduction of a step (sudden variation). The computational simulations and the experimental data suggest that the introduction of the ramp is the better reproduction of the layer pollution. The ramp approximates to the real layer pollution more than the step.

Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650°C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700°C for 60 min. The leakage current density of the films was lower than 10-9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

Carta de Aptidão para a implantação de rodovias e avaliação de alternativas de traçado com uso de geotecnologias

This study discuss the use of the geotechnologies to aid the planners on the terrain aptness definition for highways implantation and on the different trace evaluation to the extention of the Governador Carvalho Pinto highway, between Taubaté-SP and Aparecida do Norte-SP. Fratures on the area were mapping using Landsat ETM+, band Pan. In order to elaborate the phisical aptness chart for highway implantation was used the Analitical Hierarchy Process (AHP) operation, in on geographical information system (GIS). Using GIS were realized a ponderate middle with the soils, rocks, relief, slope, fractures and land use/cover maps. Using this physical aptness chart and joinning it with urban and restrict areas (that was inserted by the Boolean operation), were obtained a viability chart for highway implantation. Based on it were proposed three aleatory traces for the Carvalho Pinto highway. This traces were evaluated with the cross tabulation operation. The integration of the restrict areas, land use and phisical aptness in digital media can offer for the planners the cartography of the viability for the highway implantation. The evaliation of these three traces, based on the viability chart, can subsidyse the decision by the planners.

Optical and transport properties of rare-earth trivalent ions located at different sites in sol-gel SnO2

Photoluminescence and photo-excited conductivity data as well as structural analysis are presented for sol-gel SnO2 thin films doped with rare earth ions Eu3+ and Er3+, deposited by sol-gel-dip-coating technique. Photoluminescence spectra are obtained under excitation with various types of monochromatic light sources, such as Kr+, Ar+ and Nd:YAG lasers, besides a Xe lamp plus a selective monochromator with UV grating. The luminescence fine structure is rather different depending on the location of the rare-earth doping, at lattice symmetric sites or segregated at the asymmetric grain boundary layer sites. The decay of photo-excited conductivity also shows different trapping rate depending on the rare-earth concentration. For Er-doped films, above the saturation limit, the evaluated capture energy is higher than for films with concentration below the limit, in good agreement with the different behaviour obtained from luminescence data. For Eu-doped films, the difference in the capture energy is not so evident in these materials with nanoscocopic crystallites, even though the luminescence spectra are rather distinct. It seems that grain boundary scattering plays a major role in Eu-doped SnO2 films. Structural evaluation helps to interpret the electro-optical data. © 2010 IOP Publishing Ltd.

Ensino de eletrostática: a história da ciência contribuindo para a aquisição de subsunções

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Reciclagem de isolantes térmicos presentes em defletores de calor automotivo

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo da interação entre camadas de super-redes supercondutor/isolante/ferromagneto

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Effects of thermal annealing on the semi-insulating properties of radio frequency magnetron sputtering-produced germanate thin films

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Al2O3 Obtained through resistive evaporation for use as insulating layer in transparent field effect transistor

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.