Design and simulation of a RF MEMS shunt switch for Ka and V bands and the impact of varying its geometrical parameters

RF MEMS plays an important role in microwave switching. The high performance of RF MEMS shunt such as high bandwidth, low insertion loss, and high isolation have made these switches well suitable for high performing microwave and millimeter wave circuits. This paper presents a RF MEMS shunt capacitive switch for Ka and V band application. This paper investigates the effect of various geometrical parameters on RF characteristics of the switch. The simulation results are presented and discussed.

RF techniques for lowering the actuation voltage of RF MEMS shunt capacitor switch for C-K band

Increasing the capacitance ratio in RF MEMS shunt capacitive switch will increase its RF performance but also raise its actuation voltage. To improve the RF performance of the switch without increasing its capacitance ratio, this paper explores two methods: reducing the LC resonance from the mm-wave into the X-band by using an inductive bridge, and using two short high impedance transmission lines at both ends of the CPW line. Accordingly, this paper presents the design and simulation of an electro-static low actuation voltage and a very high isolation multipurpose switch with a very large bandwidth. The simulation results are presented and discussed.

Design and simulation of a high isolation RF MEMS shunt capacitive switch for C-K band

This paper presents a wide band RF MEMS capacitive switch. The LC resonant frequency is reduced from mm wave to X band frequencies at down-state by using a meander type membrane, with the frequency band is being increased by adding two short high impedance lines at both ends of coplanar waveguide (CPW). Moreover, this acts as T-match circuit in up-state position and improves the matching. Simulation results demonstrate that the capacitance ratio reduces from 50 to 21.4, S21 and S11 are less than −10dB for the entire frequency band at down-state and up-state. Also, a comprehensive and complete electric model of the switch is proposed and simulation results agree well with the characteristics of the physical structure of the MEMS switch. Vpull-in and Vpull-out of this switch are 8.1V and 0.3V, respectively.

Design and simulation of a low voltage wide band RF MEMS switch

This paper presents design of an electrostatic wide band shunt capacitive coupling RF MEMS switch with low actuation voltage. The key factors of the RF MEMS switch design are the proper scattering parameters, low actuation voltage, and the cost of the fabrication process. An overview of the recent low actuation voltage RFMEMS switches has been presented. These designs still suffer from the complexity of process, lack of reliability, limitation of frequency band, and process cost. RF characteristics of a shunt RF MEMS switches are specified mostly by coupling capacitor in upstate position of the membrane Cu. This capacitor is in trade-off with actuation voltage. In this work, the capacitor is eliminated by using two short high impedance transmission lines, at the input and output of the switch. The simulation results demonstrate an improvement in the RF characteristic of the switch.

Design and simulation of a tunable MEMS filter for wireless biomedical signal transceivers

This paper presents a new architecture for a high quality tunable MEMS filter that can be used in wireless biomedical signal transceivers. It consists of a π match circuit with two shunt capacitive coupling switches separated by a piece of high impedance short transmission line, and also a series switch placed at the quarter wavelength distance away from the π match circuit. The low actuation voltage and also tunability are important features of the design objective. All portions of the filter can be realized simultaneously. Thus, the filter docs not require any extra steps during its fabrication, and is not costly. The simulation results confirm the good performance of the filter.

Determining RF MEMS switch parameter by neural networks

A challenge in designing a RF MEMS switch is the determination of its parameters to satisfy the application requirements. Often this is done through a set of comprehensive time consuming simulations. This paper employs neural networks and develops a supervised learner that is capable of determining S11 parameter for a RF MEMS shunt switch. The inputs are the length its L and the height of its gap. The outputs are S11s for eight different frequency points from 0 to V band. The developed learner helps prevent repetitive simulations when designing the specified switch. Simulation results are presented.

An effective VAR planning to improve dynamic voltage profile of distribution networks with distributed wind generation

This paper proposes an effective VAR planning based on reactive power margin for the enhancement of dynamic voltage stability in distribution networks with distributed wind generation. The analysis is carried over a distribution test system representative of the Kumamoto area in Japan. The detailed mathematical modeling of the system is also presented. Firstly, this paper provides simulation results showing the effects of composite load on voltage dynamics in the distribution network through an accurate time-domain analysis. Then, a cost-effective combination of shunt capacitor bank and distribution static synchronous compensator (D-STATCOM) is selected to ensure fast voltage recovery after a sudden disturbance. The analysis shows that the proposed approach can reduce the size of compensating devices, which in turn, reduces the cost. It also reduces power loss of the system.

Voltage profile improvement for distributed wind generation using D-STATCOM

This paper presents the application of FACTS devices for the enhancement of dynamic voltage stability in distribution networks with distributed wind generation. The analysis is carried over a test distribution system representative of the Kumamoto area in Japan. The detailed mathematical modelling of the system is also presented. Firstly, this paper provides simulation results showing the effects of higher and lower penetration of distributed wind generation on the voltage dynamics in a faulted system. Then, a distribution static synchronous compensator (D-STATCOM) is used to improve the voltage profile of the system. This analysis shows that D-STATCOM has significant performance to improve the voltage dynamics of distribution system compared to shunt capacitor.