Zur Reaktionskinetik der Oxidation von Kohlenstoffmaterialien aus Biomasse

Zur Modellierung von Vergasungs- und Verbrennungsprozessen zur energetischen Nutzung von Biomasse ist die Kenntnis von reaktionskinetischen Daten für die Sauerstoff-Oxidation von Biomassepyrolysaten erforderlich. Eine ausführliche Literaturübersicht zeigt den Stand der Forschung bezüglich der experimentellen Ermittlung von reaktionskinetischen Parametern für die Oxidation von Pyrolysaten aus Lignin, Cellulose und pflanzlicher Biomasse sowie der Suche nach einem plausiblen Reaktionsmechanismus für die Reaktion von Sauerstoff mit festen Kohlenstoffmaterialien. Es wird eine Versuchsanlage mit einem quasistationär betriebenen Differentialreaktor konstruiert, die eine Messung der Reaktionskinetik und der reaktiven inneren Oberfläche (RSA) für die Reaktion eines Pyrolysats aus Maispflanzen mit Sauerstoff ermöglicht. Die getrockneten und zerkleinerten Maispflanzen werden 7 Minuten lang bei 1073 K in einem Drehrohrofen pyrolysiert. Das Pyrolysat zeichnet sich vor allem durch seine hohe Porosität von über 0,9 und seinen hohen Aschegehalt von 0,24 aus. Die RSA wird nach der Methode der Messung von Übergangskinetiken (TK) bestimmt. Die Bestimmung der RSA erfolgt für die Reaktionsprodukte CO und CO2 getrennt, für die entsprechend ermittelten Werte werden die Bezeichnungen CO-RSA und CO2-RSA eingeführt. Die Abhängigkeit dieser Größen von der Sauerstoffkonzentration läßt sich durch eine Langmuir-Isotherme beschreiben, ebenso das leichte Absinken der CO-RSA mit der Kohlendioxidkonzentration. Über dem Abbrand zeigen sich unterschiedliche Verläufe für die CO-RSA, CO2-RSA und die innere Oberfläche nach der BET-Methode. Zur Charakterisierung der Oberflächenzwischenprodukte werden temperaturprogrammierte Desorptionsversuche (TPD) durchgeführt. Die Ergebnisse zeigen, daß eine Unterscheidung in zwei Kohlenstoff-Sauerstoff-Oberflächenkomplexe ausreichend ist. Die experimentellen Untersuchungen zum Oxidationsverlauf werden im kinetisch bestimmten Bereich durchgeführt. Dabei werden die Parameter Temperatur, Sauerstoff-, CO- und CO2-Konzentration variiert. Anhand der Ergebnisse der reaktionskinetischen Untersuchungen wird ein Reaktionsmechanismus für die Kohlenstoff-Sauerstoff-Reaktion entwickelt. Dieser Reaktionsmechanismus umfaßt 7 Elementarreaktionen, für welche die reaktionskinetischen Parameter numerisch ermittelt werden. Darüber hinaus werden reaktionskinetische Parameter für einfachere massenbezogene Reaktionsgeschwindigkeitsansätze berechnet und summarische Reaktionsgeschwindigkeitsansätze für die Bildung von CO und CO2 aus dem Reaktionsmechanismus hergeleitet.

Zur Adsorption und Reaktion von Stickstoffmonoxid an Aktivkohle

Die Verwendung von Aktivkohlen und -koksen stellt eine Alternative zu herkömmlichen Prozessen zur Verminderung der NOx-Emissionen in Rauchgasen dar. An diesen Materialien wird Stickstoffmonoxid adsorbiert und katalytisch zu N2 reduziert. Eine einheitliche Erklärung über die ablaufenden Vorgänge und die Reaktionsmechanismen gibt es noch nicht. Die Ergebnisse der bisher veröffentlichten wissenschaftlichen Arbeiten sind sehr unterschiedlich, wenn nicht sogar widersprüchlich. In dieser Arbeit wird, anhand der Messung von NO-Durchbruchskurven und thermischen Desorptionsspektren, die Adsorption und Reaktion von Stickstoffmonoxid an Aktivkohlen und -koksen in Anwesenheit von Sauerstoff und Wasserdampf untersucht. Zur Durchführung der experimentellen Untersuchungen wird eine Versuchsanlage, bestehend aus einer Vorrichtung zur Gasgemischaufbereitung, einem Festbettreaktor und einer Gasanalytik, konzipiert und aufgebaut. Die Untersuchungen erfolgen bei Temperaturen zwischen 100 und 150 °C. Die NO-, O2- und H2O-Konzentrationen werden anhand der Rauchgaszusammensetzung kohlegefeuerter Kraftwerke gewählt. Die experimentellen Untersuchungen konzentrieren sich auf die Verwendung einer Aktivkohle aus Ölpalmschalen, die in einem Drehrohrreaktor am Institut für Thermische Energietechnik der Universität Kassel hergestellt wurde. Die experimentellen Ergebnisse zeigen, dass während des Prozesses NO-Adsorption, -Reduktion und -Oxidation, NO2-Bildung, -Adsorption und -reduktive Desorption, H2O-Adsorption sowie O2-Vergasung gleichzeitig stattfinden. Bei niedrigen Temperaturen werden die NO2-Bildung und die Adsorption bevorzugt. Die NO-Reduktion läuft über adsorbiertes NO mit CO2- und CO-Bildung. Durch O2-Vergasung werden aktive freie Cf-Plätzen für die NO-Reaktion und -Adsorption gebildet. Wasserdampf wird an der Aktivkohle adsorbiert und belegt aktive Plätze für diese Prozesse. Aus den experimentellen Ergebnissen werden kinetische und Gleichgewichtsparameter der NO-Sorption bestimmt. Ein vereinfachtes mathematisches Modell des Festbettreaktors, das zur Berechnung der NO-Durchbruchskurven bei unterschiedlichen Temperaturen dient, wird aufgestellt.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

Optimization of Processing Technology for Commercial Drying of Bananas (Matooke)

Summary - Cooking banana is one of the most important crops in Uganda; it is a staple food and source of household income in rural areas. The most common cooking banana is locally called matooke, a Musa sp triploid acuminate genome group (AAA-EAHB). It is perishable and traded in fresh form leading to very high postharvest losses (22-45%). This is attributed to: non-uniform level of harvest maturity, poor handling, bulk transportation and lack of value addition/processing technologies, which are currently the main challenges for trade and export, and diversified utilization of matooke. Drying is one of the oldest technologies employed in processing of agricultural produce. A lot of research has been carried out on drying of fruits and vegetables, but little information is available on matooke. Drying of matooke and milling it to flour extends its shelf-life is an important means to overcome the above challenges. Raw matooke flour is a generic flour developed to improve shelf stability of the fruit and to find alternative uses. It is rich in starch (80 - 85%db) and subsequently has a high potential as a calorie resource base. It possesses good properties for both food and non-food industrial use. Some effort has been done to commercialize the processing of matooke but there is still limited information on its processing into flour. It was imperative to carry out an in-depth study to bridge the following gaps: lack of accurate information on the maturity window within which matooke for processing into flour can be harvested leading to non-uniform quality of matooke flour; there is no information on moisture sorption isotherm for matooke from which the minimum equilibrium moisture content in relation to temperature and relative humidity is obtainable, below which the dry matooke would be microbiologically shelf-stable; and lack of information on drying behavior of matooke and standardized processing parameters for matooke in relation to physicochemical properties of the flour. The main objective of the study was to establish the optimum harvest maturity window and optimize the processing parameters for obtaining standardized microbiologically shelf-stable matooke flour with good starch quality attributes. This research was designed to: i) establish the optimum maturity harvest window within which matooke can be harvested to produce a consistent quality of matooke flour, ii) establish the sorption isotherms for matooke, iii) establish the effect of process parameters on drying characteristics of matooke, iv) optimize the drying process parameters for matooke, v) validate the models of maturity and optimum process parameters and vi) standardize process parameters for commercial processing of matooke. Samples were obtained from a banana plantation at Presidential Initiative on Banana Industrial Development (PIBID), Technology Business Incubation Center (TBI) at Nyaruzunga – Bushenyi in Western Uganda. A completely randomized design (CRD) was employed in selecting the banana stools from which samples for the experiments were picked. The cultivar Mbwazirume which is soft cooking and commonly grown in Bushenyi was selected for the study. The static gravitation method recommended by COST 90 Project (Wolf et al., 1985), was used for determination of moisture sorption isotherms. A research dryer developed for this research. All experiments were carried out in laboratories at TBI. The physiological maturity of matooke cv. mbwazirume at Bushenyi is 21 weeks. The optimum harvest maturity window for commercial processing of matooke flour (Raw Tooke Flour - RTF) at Bushenyi is between 15-21 weeks. The finger weight model is recommended for farmers to estimate harvest maturity for matooke and the combined model of finger weight and pulp peel ratio is recommended for commercial processors. Matooke isotherms exhibited type II curve behavior which is characteristic of foodstuffs. The GAB model best described all the adsorption and desorption moisture isotherms. For commercial processing of matooke, in order to obtain a microbiologically shelf-stable dry product. It is recommended to dry it to moisture content below or equal to 10% (wb). The hysteresis phenomenon was exhibited by the moisture sorption isotherms for matooke. The isoteric heat of sorption for both adsorptions and desorption isotherms increased with decreased moisture content. The total isosteric heat of sorption for matooke: adsorption isotherm ranged from 4,586 – 2,386 kJ/kg and desorption isotherm from 18,194– 2,391 kJ/kg for equilibrium moisture content from 0.3 – 0.01 (db) respectively. The minimum energy required for drying matooke from 80 – 10% (wb) is 8,124 kJ/kg of water removed. Implying that the minimum energy required for drying of 1 kg of fresh matooke from 80 - 10% (wb) is 5,793 kJ. The drying of matooke takes place in three steps: the warm-up and the two falling rate periods. The drying rate constant for all processing parameters ranged from 5,793 kJ and effective diffusivity ranged from 1.5E-10 - 8.27E-10 m2/s. The activation energy (Ea) for matooke was 16.3kJ/mol (1,605 kJ/kg). Comparing the activation energy (Ea) with the net isosteric heat of sorption for desorption isotherm (qst) (1,297.62) at 0.1 (kg water/kg dry matter), indicated that Ea was higher than qst suggesting that moisture molecules travel in liquid form in matooke slices. The total color difference (ΔE*) between the fresh and dry samples, was lowest for effect of thickness of 7 mm, followed by air velocity of 6 m/s, and then drying air temperature at 70˚C. The drying system controlled by set surface product temperature, reduced the drying time by 50% compared to that of a drying system controlled by set air drying temperature. The processing parameters did not have a significant effect on physicochemical and quality attributes, suggesting that any drying air temperature can be used in the initial stages of drying as long as the product temperature does not exceed gelatinization temperature of matooke (72˚C). The optimum processing parameters for single-layer drying of matooke are: thickness = 3 mm, air temperatures 70˚C, dew point temperature 18˚C and air velocity 6 m/s overflow mode. From practical point of view it is recommended that for commercial processing of matooke, to employ multi-layer drying of loading capacity equal or less than 7 kg/m², thickness 3 mm, air temperatures 70˚C, dew point temperature 18˚C and air velocity 6 m/s overflow mode.