3 resultados para High-temperature injection molding

em Biblioteca Digital da Produção Intelectual da Universidade de São Paulo


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We prove that the hard thermal loop contribution to static thermal amplitudes can be obtained by setting all the external four-momenta to zero before performing the Matsubara sums and loop integrals. At the one-loop order we do an iterative procedure for all the one-particle irreducible one-loop diagrams, and at the two-loop order we consider the self-energy. Our approach is sufficiently general to the extent that it includes theories with any kind of interaction vertices, such as gravity in the weak field approximation, for d space-time dimensions. This result is valid whenever the external fields are all bosonic.

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Composites of high-density biopolyethylene (HDBPE) obtained from ethylene derived from sugarcane ethanol and curaua fibers were formed by first mixing in an internal mixer followed by thermopressing. Additionally, hydroxyl-terminated polybutadiene (LHPB), which is usually used as an impact modifier, was mainly used in this study as a compatibilizer agent. The fibers, HDBPE and LHPB were also compounded using an inter-meshing twin-screw extruder and, subsequently, injection molded. The presence of the curaua fibers enhanced some of the properties of the HDBPE, such as its flexural strength and storage modulus. SEM images showed that the addition of LHPB improved the adhesion of the fiber/matrix at the interface, which increased the impact strength of the composite. The higher shear experienced during processing probably led to a more homogeneous distribution of fibers, making the composite that was prepared through extruder/injection molding more resistant to impact than the composite processed by the internal mixer/thermopressing. (c) 2012 Elsevier Ltd. All rights reserved.

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In this work, the temperature impact on the off-state current components is analyzed through numerical simulation and experimentally. First of all, the band-to-band tunneling is studied by varying the underlap in the channel/drain junction, leading to an analysis of the different off-state current components. For pTFET devices, the best behavior for off-state current was obtained for higher values of underlap (reduced BTBT) and at low temperatures (reduced SRH and TAT). At high temperature, an unexpected off-state current occurred due to the thermal leakage current through the drain/channel junction. Besides, these devices presented a good performance when considering the drain current as a function of the drain voltage, making them suitable for analog applications. (C) 2012 Elsevier Ltd. All rights reserved.