Some microbiological aspects of bauxite mineralization and beneficiation

A microbial survey of Jamnagar bauxite mines in Gujarat, India, revealed the indigenous presence of a variety of autotrophic and heterotrophic bacteria and fungi associated with the ore body and water ponds in the vicinity. Among these, bacteria belonging to the genera Thiobacillus, Bacillus and Pseudomonas are implicated in the weathering of aluminosilicates; the precipitation of iron oxyhydroxides; the dissolution and conversion of alkaline metal species; and the formation of alumina, silica and calcite minerals. Fungi belonging to the genus Cladosporium can reduce ferric iron and dissolve alumina silicates. Biogenesis thus plays a significant role in bauxite mineralization. Various types of bacteria and fungi, such as Bacillus polymyxa, Bacillus coagulans and Aspergillus niger, were found to be efficient in significant calcium solubilization and partial iron removal from bauxite ore. Probable mechanisms in the biobeneficiation process are analyzed. Biobeneficiation is shown to be an effective technique for the removal of iron and calcium from bauxite ores for use in refractories and ceramics.

Electrochemical aspects of leaching of ocean nodules in the presence and absence of microorganisms

instead of using chemical-reducing agents to facilitate the reduction and dissolution of manganese and iron oxide in the ocean nodule, electrochemical reduction based on two approaches, namely, cathodic polarization and galvanic interaction, can also be considered as attractive alternatives. Galvanic leaching of ocean nodules in the presence of pyrite and pyrolusite for complete recovery of Cu, Ni and Co has been discussed. The key for successful and efficient dissolution of copper, nickel and cobalt from ocean nodules depends on prior reduction of the manganese and ferric oxides with which the above valuable nonferrous metals are interlocked. Polarization studies using a slurry electrode system indicated that maximum dissolution of iron and manganese due to electrochemical reduction occurred at negative DC potentials of -600 mV (SCE) and -1400 mV (SCE). The present work is also relevant to galvanic bioleaching of ocean nodules using autotrophic microorganisms, such as Thiobacillus ferrooxidans and T thiooxidans, which resulted in significant dissolution of copper, nickel and cobalt at the expense of microbiologically generated acids. Various electrochemical and biochemical mechanisms are outlined and the electroleaching and galvanic processes so developed are shown to yield almost complete dissolution of all metal values. (C) 2002 Elsevier Science B.V. All rights reserved.

Certain Novel Aspects of Thallium and Bismuth Cuprate Superconductors

Novel superconducting thallium cuprates of the type T1Ca1‐X LnX Sr2 Cu2O6+δ (Ln = Y or rare earth), T1Srn+1‐x Lnx Cun OY and Tl1‐x PbX Srn+1Cun08+δ are described. These cuprates as well as Bi2Ca1‐x Lnx Sr2Cu2O8+δ and TICa1‐xYxBa2 Cu2 O6+δ . show maximum T around a specific composition or oxygen content. They also show interesting changes in the sign and magnitude of the thermopower with the composition. Specially noteworthy is the negative slope of the thermopower‐temperature plots. The thermopower behaviour in these two‐band systems can be understood in terms of entropie and quasiparticle contributions. It appears that Tl1‐x Pbx CaSr2Cu2O6+δ is a genuine high T electron superconductor.

Hyper-activation of the TCP4 transcription factor in Arabidopsis thaliana accelerates multiple aspects of plant maturation

Plant organs are initiated as primordial outgrowths, and require controlled cell division and differentiation to achieve their final size and shape. Superimposed on this is another developmental program that orchestrates the switch from vegetative to reproductive to senescence stages in the life cycle. These require sequential function of heterochronic regulators. Little is known regarding the coordination between organ and organismal growth in plants. The TCP gene family encodes transcription factors that control diverse developmental traits, and a subgroup of class II TCP genes regulate leaf morphogenesis. Absence of these genes results in large, crinkly leaves due to excess division, mainly at margins. It has been suggested that these class II TCPs modulate the spatio-temporal control of differentiation in a growing leaf, rather than regulating cell proliferation per se. However, the link between class II TCP action and cell growth has not been established. As loss-of-function mutants of individual TCP genes in Arabidopsis are not very informative due to gene redundancy, we generated a transgenic line that expressed a hyper-activated form of TCP4 in its endogenous expression domain. This resulted in premature onset of maturation and decreased cell proliferation, leading to much smaller leaves, with cup-shaped lamina in extreme cases. Further, the transgenic line initiated leaves faster than wild-type and underwent precocious reproductive maturation due to a shortened adult vegetative phase. Early senescence and severe fertility defects were also observed. Thus, hyper-activation of TCP4 revealed its role in determining the timing of crucial developmental events, both at the organ and organism level.

Procedural aspects of modeling the dynamics of a three wheeled vehicle using ADAMS-CAR

We describe in some detail the process of development of a dynamic model of a three wheeled vehicle using ADAMS-CAR. We first describe the rigid body model, and then the modeling of structural flexibilities. The aim of this report is to document procedural details of such modeling, with a view to presenting more research and development oriented investigations in the future. The contents of this report may also be of interest to practicing engineers engaged in multi-body dynamics modeling of wheeled vehicles.

SOS films and interfaces: chemical aspects

The possible chemical reactions that take place during the growth of single crystal films of silicon on sapphire (SOS) are analyzed thermodynamically. The temperature for the growth of good quality epitaxial films is dependent on the extent of water vapor present in the carrier gas. The higher the water vapor content the higher the temperature needed to grow SOS films. Due to the interaction of silicon with sapphire at elevated temperatures, SOS films are doped with aluminum. The extent of doping is dependent on the conditions of film growth. The doping by aluminum from the substrate increases with increasing growth temperatures and decreasing growth rates. The equilibrium concentrations of aluminum at the silicon-sapphire interface are calculated as a function of deposition temperature, assuming that SiO2 or Al6Si2O13 are the products of reaction. It is most likely that the product could be a solid solutio n of Al2O3 in SiO2. The total amount of aluminum released due to the interaction between silicon and sapphire will account only for the formation of not more than one monolayer of reaction product unless the films are annealed long enough at elevated temperatures. This value is in good agreement with the recently reported observations employing high resolution transmission electron microscopy.