32 resultados para Cu surface

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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用大气压非转移弧层流等离子体射流,对W-Mo-Cu铸铁表面进行熔凝相变强化处理,观察和测试了试样经不同弧电流处理后的表面层组织、硬度、耐磨性.结果表明,层流等离子体射流对铸铁表面的局部快速加热熔化和冷却凝固,明显改变了表面层的微观组织,提高了硬度和抗磨损性能.

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Molecular dynamics (MD) simulations are carried out to analyze the diffusion bonding at Cu/Al interfaces. The results indicate that the thickness of the interfacial layer is temperature-dependent, with higher temperatures yielding larger thicknesses. At temperatures below 750 K, the interface thickness is found to increase in a stepwise manner as a function of time. At temperatures above 750 K, the thickness increases rapidly and smoothly. When surface roughness is present, the bonding process consists of three stages. In the first stage, surfaces deform under stress, resulting in increased contact areas. The second stage involves significant plastic deformation at the interface as temperature increases, resulting in the disappearance of interstices and full contact of the surface pair. The last stage entails the diffusion of atoms under constant temperature. The bonded specimens show tensile strengths reaching 88% of the ideal Cu/Al contact strength. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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Natural surface coatings sampled (NSCSs) from the surface of shingles and surficial sediments (SSs) in the Songhua River, China were employed to investigate the similarities and difference in fractions of heavy metals (Fe, Mn, Zn, Cu, Pb, and Cd) between NSCSs and SSs using the modified sequential extraction procedure (MSEP). The results show that the differences between NSCSs and SSs in Fe fractions were insignificant and Fe was dominantly present as residual phase (76.22% for NSCSs and 80.88% for SSs) and Fe-oxides phase (20.33% for NSCSs and 16.15% for SSs). Significant variation of Mn distribution patterns between NSCSs and SSs was observed with Mn in NSCSs mainly present in Mn-oxides phase (48.27%) and that in SSs present as residual phase (45.44%). Zn, Cu, Pb and Cd were found dominantly in residual fractions (>48%), and next in solid oxides/hydroxides for Zn, Pb and Cd and in easily oxidizable solids/compounds form for Cu, respectively. The heavy metal distribution pattern implied that Fe/Mn oxides both in NSCSs and SSs were more important sinks for binding and adsorption of Zn, Pb and Cd than organic matter (OM), and inversely, higher affinity of Cu to OM than Fe/Mn oxides in NSCSs and SSs was obtained. Meanwhile, it was found that the distributions of heavy metals in NSCSs and SSs were similar to each other and the pseudo-total concentrations of Zn, Cu, Pb and Cd in NSCSs were greater than those in SSs, highlighting the more importance for NSCSs than SSs in controlling behaviours of heavy metals in aquatic environments.

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Different chemical mechanical polishing (CMP) slurries are used to obtain single-damascene Cu-wires with different surface fluctuations as well as pre-existing surface-defects in wires with rougher surfaces. The presence of such pre-existing defects strongly increases the rate of early failures to almost 100%, reduces electromigration lifetime rapidly to the level of early failures, and changes the multimodal failure distribution into monomodal. The activation energy (0. 74±0.02eV) for the failure mechanism associated with these pre-existing defects confirms a dominant surface diffusion. It shows how a weakest link approximation analysis can he applied to a single wire by dividing the wire into relevant segments and assigning different failure mechanisms to the various segments. The analysis confirms that, although surface-defects are not the fastest early failure mechanism, the ten times higher surface-defectdensity in the rougher wires is responsible for the observed high early-failure rate and unreliable performance.

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Surface plasmon resonances of arrays of parallel copper nanowires, embedded in ion track-etched polycarbonate membranes, were investigated by systematic changes of nanowires’ topology and arrays area density. The extinction spectra exhibit two peaks which are attributed to interband transitions of Cu bulk metal and to a dipolar surface plasmon resonance, respectively. The resonances were investigated as a function of wire diameter and length, mean distance between adjacent wires, and angle of incidence of the light field with respect to the long wire axis. The dipolar peak shifts to larger wavelengths with increasing diameter and length, and diminishing mean distance between adjacent wires. Additionally, the shape effect on the dipolar peak is investigated.

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To evaluate the interactions between the atoms of An, Ag and Cu and clean Si(111) surface, two types of silicon clusters Si4H7 and Si16H20 together with their metal complexes were studied by using hybrid (U)B3LYP density functional theory method. Optimized geometries and energies on different adsorption sites indicate that: (1) the binding energies at different adsorption sites are large (ranging from similar to 1.2 to 2.6 eV depend on the metal atoms and adsorption sites), suggesting a strong interaction between metal atom and silicon surface; (2) the most favorable adsorption site is the on top (T) site. Mulliken population analysis indicated that in the system of on top (T) site, a covalent bond is formed between metal atom and dangling bond of surface Si atom. (c) 2006 Elsevier B.V. All rights reserved.

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Using high-resolution electron microscopy, localized solid-state amorphization (SSA) was observed in a nanocrystalline (NC) Al solid solution (weight per cent 4.2 Cu, 0.3 Mn, the rest being Al) subjected to a surface mechanical attrition treatment. It was found that the deformation-induced SSA may occur at the grain boundary (GB) where either the high density dislocations or dislocation complexes are present. It is suggested that lattice instability due to elastic distortion within the dislocation core region plays a significant role in the initiation of the localized SSA at defective sites. Meanwhile, the GB of severely deformed NC grains exhibits a continuously varying atomic structure in such a way that while most of the GB is ordered but reveals corrugated configurations, localized amorphization may occur along the same GB.

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采用玻璃包覆的方法获得具有较大过冷度的亚共晶、共晶以及过共晶Ag-Ge合金熔体,并通过高能离子束轰击Cu箔产生Cu原子团簇溅射到过冷合金熔体中来触发非均质形核过程.凝固后合金显微组织的分析结果表明:在深过冷合金熔体中引入Cu原子团簇,它对亚共晶、共晶以及过共晶Ag-Ge合金的显微组织演变有着不同的影响效果,分析了显微组织的演变规律与形成机制. The Ag-Ge alloy melts with deeply undercooled hypoeutectic, eutectic and hypereutectic were obtained via glass fluxing technique. The nucleation of the deeply undercooled alloy melts were triggered by atoms cluster sputtering on the surface of the melts. The atoms clusters were generated by an ion beam bombarding on the Cu foil fixed above the alloy melts. The resultant microstructure reveals that the induced atom clusters exert great influence on the microstructural evolution of the highly undercooled eutectic and hypereutectic Ag-Ge alloys, but no obvious influence on the highly undercooled hypoeutectic alloy. The microstructural evolution and formation mechanism were analyzed and discussed.

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Metallic nanowires have many attractive properties such as ultra-high yield strength and large tensile elongation. However, recent experiments show that metallic nanowires often contain grain boundaries, which are expected to significantly affect mechanical properties. By using molecular dynamics simulations, here, we demonstrate that polycrystalline Cu nanowires exhibit tensile deformation behavior distinctly different from their single-crystal counterparts. A significantly lowered yield strength was observed as a result of dislocation emission from grain boundaries rather than from free surfaces, despite of the very high surface to volume ratio. Necking starts from the grain boundary followed by fracture, resulting in reduced tensile ductility. The high stresses found in the grain boundary region clearly play a dominant role in controlling both inelastic deformation and fracture processes in nanoscale objects. These findings have implications for designing stronger and more ductile structures and devices on nanoscale.