Pressure behavior of Te isoelectronic centers in ZnS : Te

ZnS:Te epilayers with Te concentration from 0.5% to 3.1% were studied by photoluminescence under hydrostatic pressure at 15 K. Two emission bands related to the isolated Te-1 and Te-2 pair isoelectronic centers were observed in the samples with Te concentrations of 0.5% and 0.65%. For the samples with Te concentrations of 1.4% and 3.1%, only the Te-2-related peak was observed. The pressure coefficients of all the Te-1-related bands were found to be unexpectedly much larger than that of the ZnS band gap. The pressure coefficients for all the Te-2-related bands are, however, rather smaller than that of ZnS band gap as usually observed. Analysis based on a Koster-Slater model indicates that an increase of the valence bandwidth with pressure is the main reason for the faster pressure shift of the Te-1 centers, and the huge difference in the pressure behavior of the Te-1 and Te-2 centers is due mainly to the difference in the pressure-induced enhancement of the impurity potential on the Te-1 and Te-2 centers. (C) 2002 American Institute of Physics.

Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice

An anomalous behavior of the current self-oscillation frequency is observed in the dynamic de voltage bands, emerging from each sawtoothlike branch of the current-voltage characteristic of a doped GaAs/A1As superlattice in the transition process from static to dynamic electric field domain formations. Varying the applied de voltage at a fixed temperature, we find that the frequency increases while the averaged current decreases. Inside each voltage band, the frequency has a strong voltage dependence in the temperature range where the averaged current changes with the applied de voltage. This dependence can be understood in terms of motion of the system along a limit cycle.

Annealing behavior of hexagonal phase content in cubic GaN thin films grown on GaAs (001) by MOCVD

The annealing behavior of the hexagonal phase content in cubic GaN (c-GaN) thin films grown on GaAs (001) by MOCVD is reported. C-GaN thin films are grown on GaAs (001) substrates by metalorganic chemical vapor deposition (MOCVD). High temperature annealing is employed to treat the as-grown c-GaN thin films. The characterization of the c-GaN films is investigated by photoluminescence (PL) and Raman scattering spectroscopy. The change conditions of the hexagonal phase content in the metastable c-GaN are reported. There is a boundary layer existing in the c-GaN/GaAs film. When being annealed at high temperature, the intensity of the TOB and LOB phonon modes from the boundary layer weakens while that of the E-2 phonon mode from the hexagonal phase increases. The content change of hexagonal phase has closer relationship with annealing temperature than with annealing time period.

Role of the evanescent states in the electron transport in quantum waveguides

Recognizing the computational difficulty due to the exponential behavior of the evanescent states in the calculations of the electron transmission in waveguide structures, the authors propose two transfer matrix methods and apply them to investigate the influence of the evanescent states on the electron wave propagation. The study shows that the effect of the evanescent states on the electron transport is obvious when the electron energy is close to the subband minima. The results show that the calculated transmissions are much enhanced if the evanescent states are omitted in the calculations. For the multiple-stub structures, it is found that the connecting channel length has a critical effect on the electron transmission depending on it larger or smaller than the attenuation lengths of evanescent states. Based on the study of the evanescent states, a new kind of waveguide structures which exhibit quantum modulated transistor action is proposed. (C) 1997 American Institute of Physics.

EER studies of the single quantum well GaAs/AlxGa1-xAs electrode/nonaqueous solution interface

The interfacial behavior of the single quantum well (SQW) GaAs/AlxGa1-xAs electrode in HQ/BQ and Fc/Fc(+) electrolytes was characterized respectively by studying the quantum confined Stark effect and Franz-Keldysh oscillation with electrolyte electroreflectance spectroscopy. The interaction of the surface state of the SQW electrode with redox species and its effects on the distribution of external bias at the interface of the SQW electrode are discussed.

Optical characterization of the Ge/Si (001) islands in multilayer structure

We show that the observed temperature dependence of the photoluminescence (PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature.

Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy

The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 GPa. Two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated Te isoelectronic impurities (Te-1 centers) and Te pairs (Te-2 centers), respectively. Only the Te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. The emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the Te-n (n greater than or equal to 3) cluster centers. The pressure coefficient of the Te-1 related peak is 89(4) meV/GPa, about 40% larger than that of the band gap of ZnS. On the other hand, the pressure coefficient of the Te-2 related emissions is only 52(4) meV/GPa, about 15% smaller than that of the ZnS band gap. A simple Koster-Slater model has been used to explain the different pressure behavior of the Te-1 and Te-2 centers. The pressure coefficient of the Te-3 centers is 62(2) meV/GPa. Then the pressure coefficients of the Te-n centers decrease rapidly with further increasing Te composition.

Triton-He-3 relative and differential flows as probes of the nuclear symmetry energy at supra-saturation densities

Using a transport model coupled with a phase-space coalescence afterburner, we study the triton-He-3 (t-He-3) ratio with both relative and differential transverse flows in semicentral Sn-132 + Sn-124 reactions at a beam energy of 400 MeV/nucleon. The neutron-proton ratios with relative and differential flows are also discussed as a reference. We find that similar to the neutron-proton pairs, the t-He-3 pairs also carry interesting information regarding the density dependence of the nuclear symmetry energy. Moreover, the nuclear symmetry energy affects more strongly the t-He-3 relative and differential flows than the pi(-)/pi(+) ratio in the same reaction. The t-He-3 relative flow can be used as a particularly powerful probe of the high-density behavior of the nuclear symmetry energy.

Systematic study of the pi(-)/pi(+) ratio in heavy-ion collisions with the same neutron/proton ratio but different masses

A systematic study of the pi(-)/pi(+) ratio in heavy-ion collisions with the same neutron/proton ratio but different masses can help single out effects of the nuclear mean field on pion production. Based on simulations using the IBUU04 transport model, it is found that the pi(-)/pi(+) ratio in head-on collisions of Ca-48 + Ca-48, Sn-124 + Sn-124, and Au-197 + Au-197 at beam energies from 0.25 to 0.6 GeV/nucleon increases with increasing the system size or decreasing the beam energies. A comprehensive analysis of the dynamical isospin fractionation and the pi(-)/pi(+) ratio as well as their time evolution and spatial distributions demonstrates clearly that the pi(-)/pi(+) ratio is an effective probe of the high-density behavior of the nuclear symmetry energy.

DETERMINING THE DENSITY DEPENDENCE OF THE NUCLEAR SYMMETRY ENERGY USING HEAVY-ION REACTIONS

We review recent progress in the determination of the subsaturation density behavior of the nuclear symmetry energy from heavy-ion collisions as well as the theoretical progress in probing the high density behavior of the symmetry energy in heavy-ion reactions induced by high energy radioactive beams. We further discuss the implications of these results for the nuclear effective interactions and the neutron skin thickness of heavy nuclei.

Molecular weight dependence of phase Behavior of PEO/P(EO-b-DMS) blends: Application of Sanchez-Lacombe lattice fluid theory

Molecular weight dependence of phase separation behavior of the Poly (ethylene oxide) (PEO)/Poly(ethylene oxide-block-dimethylsiloxane) (P(EO-b-DMS)) blends was investigated by both experimental and theoretical methods. The cloud point curves of PEO/P(EO-b-DMS) blends were obtained by turbidity method. Based on Sanchez-Lacombe lattice fluid theory (SLLFT), the adjustable parameter, epsilon*(12)/k (quantifying the interaction energy between different components), was evaluated by fitting the experimental data in phase diagrams. To calculate the spinodals, binodals, and the volume changes of mixing for these blends, three modified combining rules of the scaling parameters for the block copolymer were introduced.

Electrochemical corrosion behavior of Mg-5Al-0.4Mn-xNd in NaCl solution

The electrochemical corrosion behavior of Mg-5Al-0.4Mn-xNd (x = 0, 1, 2 and 4 wt.%) alloys in 3.5% NaCl solution was investigated. The corrosion behavior of the alloys was assessed by open circuit potential measure, potentiodynamic polarization, and electrochemical impedance spectroscopy. The electrochemical results show the intermetallic precipitates with Nd behave as less noble cathodes in micro-galvanic corrosion and suppress the cathodic process. During corrosion, Al2O3 and Nd2O3, in proper ratio, is incorporated into the corrosion film, and enhances the corrosion resistance.

Synthesis and characterization of the nanoporous ultrathin multilayer films based on molybdenum polyoxometalate (Mo-36)(n)

Ultrathin multilayer films of the wheel-shaped molybdenum polyoxometalate cluster (Mo-36)(n) and poly(allylamine hydrochloride) (PAH) have been prepared by the layer-by-layer (LbL) self-assembly method. The ((Mo-36)(n)/PAH)(m) multilayer films have been characterized by Xray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). UV-VIS measurements reveal regular film growth with each (Mo-36)(n) adsorption. The electrochemical behavior of the film at room temperature was investigated.

Miscibility and crystallization behavior of poly(3-hydroxyvalerate-co-3-hydroxyvalerate)/poly(propylene carbonate) blends

Blends of synthetic poly(propylene carbonate) (PPC) with a natural bacterial copolymer of 3-hydroxybutyrate with 3-hydroxyvalerate (PHBV) containing 8 mol % 3-hydroxyvalerate units were prepared with a simple casting procedure. PPC was thermally stabilized by end-capping before use. The miscibility, morphology, and crystallization behavior of the blends were investigated by differential scanning calorimetry, polarized optical microscopy, wide-angle X-ray diffraction (WAXD), and small-angle Xray scattering (SAXS). PHBV/PPC blends showed weak miscibility in the melt, but the miscibility was very low. The effect of PPC on the crystallization of PHBV was evident. The addition of PPC decreased the rate of spherulite growth of PHBV, and with increasing PPC content in the PHBV/PPC blends, the PHBV spherulites became more and more open. However, the crystalline structure of PHBV did not change with increasing PPC in the PHBV/PPC blends, as shown from WAXD analysis. The long period obtained from SAXS showed a small increase with the addition of PPC.

Liquid-liquid phase behavior of toluene/polyethylene oxide/poly(ethyleneoxide-b-dimethylsiloxane) polymer-containing ternary mixtures

The experimental data of phase diagrams for both polyethylene oxide/poly(ethylene oxide-b-dimethylsiloxane) binary and toluene/polyethylene oxide/poly(ethylene oxide-b-dimethylsiloxane) ternary polymer-containing systems was obtained at atmosphere pressure by light scattering method. The critical points for some pre-selected compositions and the pressure effect on the phase transition behavior of ternary system were investigated by turbidity measurements. The chosen system is a mixture of ternary which is one of the very few abnormal polymer-containing systems exhibiting pressure-induced both miscibility and immiscibility. This unusual behavior is related to the toluene concentration in the mixtures. The effect of toluene on the phase transition behavior of the ternary polymer-containing mixture was traced. Such behavior can make it possible to process composite materials from incompatible polymers.