Differential expression of three Paralichthys olivaceus Hsp40 genes in responses to virus infection and heat shock

Heat shock proteins (Hsps) are a family of highly conserved cellular proteins present in all organisms, mediating a range of essential housekeeping and cytoprotective functions as well-known molecular chaperons and recently as regulators of the immune response. By subtractive suppression hybridization, three Hsp40 homologues have been identified in the flounder (Paralichthys olivaceus) embryonic cells (FEC) after treatment with UV-inactivated turbot (Scophthalmus maximus L.) rhabdovirus (SMRV), termed PoHsp40A4, PoHsp40B6 and PoHsp40B11, whose encoded proteins all possess the conserved DnaJ domain, a signature motif of the Hsp40 family. Based on different protein structure and phylogenetic analysis, they can be categorized into two subfamilies, PoHsp40A4 for Type I Hsp40, PoHsp40B6 and PoHsp40B11 for Type 11 Hsp40. Further expression analysis revealed two very different types of kinetics in response either to heat shock or to virus infection, with a marked induction for PoHsp4OA4 and a weak one for both PoHsp40B6 and PoHsp40B11. A very distinct tissue distribution of mRNA was also revealed among the three genes, even between PoHsp40B6 and PoHsp40B11. This is the first report on the transcriptional induction of Hsp40 in virally stimulated fish cells, and the differential expressions might reflect their different roles in unstressed and stressed cells. (c) 2005 Elsevier Ltd. All rights reserved.

Molecular characterization and IFN signal pathway analysis of Carassius auratus CaSTAT1 identified from the cultured cells in response to virus infection

Type I interferon (IFN) exerts its pleiotropic effects mainly through the JAK-STAT signaling pathway, which is presently best described in mammals. By subtractive suppression hybridization, two fish signaling factors, JAK1 and STAT1, had been identified in the IFN-induced crucian carp Carassius auratus L. blastulae embryonic (CAB) cells after treatment with UV-inactivated grass carp hemorrhagic virus (GCHV). Further, the full-length cDNA of STAT1, termed CaSTAT1, was obtained. It contains 2926 bp and encodes a protein of 718 aa. CaSTAT1 is most similar to rat STAT1 with 59% identity overall and displays all highly conserved domains that the STAT family possesses. Like human STAT1beta, it lacks the C-terminus acting as transcriptional activation domain in mammals. By contrast, only a single transcript was detected in virus-induced CAB cells. Expression analysis showed that CaSTAT1 could be activated by stimulation of CAB cells with poly I:C, active GCHV, UV-inactivated GCHV or CAB IFN, and displayed diverse expression patterns similar to that of mammalian STATI. Additionally, the expression of an antiviral gene CaMx1 was also induced under the same conditions, and expression difference between CaSTAT1 and CaMx1 was revealed by induction of CAB IFN. These results provide molecular evidence supporting the notion that the fish IFN signaling transduction pathway is similar to that in mammals. Fish IFN exerts its multiple functions, at least antiviral action, through a JAK-STAT pathway. (C) 2004 Elsevier Ltd. All rights reserved.

Development of polymorphic EST markers in Penaeus monodon: applications in penaeid genetics

The objective of this study was to develop type I markers for genome mapping and other genetic studies of Penaeus monodon. Primers were designed based on expressed sequence tags (ESTs) from a P monodon cephalothorax cDNA library to amplify 100-300 bp products. 34 of the primer pairs successfully amplified PCR products from genomic DNA. Single-strand conformation polymorphism analysis showed that similar to 30% of the ESTs tested exhibit polymorphism in a test panel of P monodon individuals. Mendelian inheritance of the EST-derived markers has been established in two international reference mapping families of P monodon, and mapping of these markers is in progress. Some ESTs were successfully amplified from other Penaeus species (P. chinensis, P japonicus and P vannamei), indicating that the markers are applicable in cross-species comparison. Two populations of P. japonicus could be differentiated using one of the ESTS. In conclusion, the polymorphic EST markers developed in this study are applicable in genome mapping and population genetic studies of penaeid shrimp. (C) 2002 Elsevier Science B.V. All rights reserved.

Transgenes in F-4 pMThGH-transgenic common carp (Cyprinus carpio L.) are highly polymorphic

To gain information on the integration pattern of pMThGH-transgene, 50 transgenes were recovered from F-4 generation of pMThGH transgenic common carp (Cyprinus carpio L,) and 33 recovered genes were analyzed. The restriction maps of these recovered genes were constructed by digestion with five kinds of enzymes. These transgenes can be classified into 4 types according to their restriction maps. Only one type of transgenes maintains its original molecular form, whereas the other three types are very different from the original one and vary each other on both molecular weight and restriction maps. This implies that the sequences of most transgenes have been deleted and/or rearranged during integration and inheritance. The results of PCR amplification and Southern blot hybridization indicate that MThGH in Type I transgene keeps intact but most of its sequence has been deleted in other three types. All these results suggest that transgenes in F-4 generation of transgenic carp are highly polymorphic. Two DNA fragments concerning integration site of transgenes were cloned from recovered transgenes, and found to be homologous to the 5'UTR of beta -actin gene of common carp and mouse mRNA for receptor tyrosine kinase (RTK), respectively.

Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser

Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Gamma-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well by changing the mole fraction of alpha-Sn and Si in the well and barrier layers, respectively. The optical gain spectrum in the type I quantum well system is calculated, taking into account the electrons leakage from the Gamma-valley to L-valley of the conduction band. We found that by increasing the mole fraction of alpha-Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in Si composition in the barrier layer, which lowers the band edge of Gamma-conduction subbands, also comes to a larger optical gain.

Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of MgO (111)/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 3.65 +/- 0.23 eV and the conduction band offset is deduced to be 0.92 +/- 0.23 eV, indicating that the heterojunction has a type- I band alignment. The accurate determination of the valence and conduction band offsets is important for the applications of MgO/SiC optoelectronic devices. (C) 2008 American Institute of Physics.

Valence band offset of MgO/InN heterojunction measured by x-ray photoelectron spectroscopy

MgO may be a promising gate dielectric and surface passivation film for InN based devices and the valence band offset of MgO/InN heterojunction has been measured by x-ray photoelectron spectroscopy. The valence band offset is determined to be 1.59 +/- 0.23 eV. Given the experimental band gap of 7.83 for the MgO, a type-I heterojunction with a conduction band offset of 5.54 +/- 0.23 eV is found. The accurate determination of the valence and conduction band offsets is important for use of MgO/InN electronic devices. (c) 2008 American Institute of Physics.

Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy

Thin SiO2 interlayer is the key to improving the electroluminescence characteristics of light emitting diodes based on ZnO heterojunctions, but little is known of the band offsets of SiO2/ZnO. In this letter, energy band alignment of SiO2/ZnO interface was determined by x-ray photoelectron spectroscopy. The valence band offset Delta E-V of SiO2/ZnO interface is determined to be 0.93 +/- 0.15 eV. According to the relationship between the conduction band offset Delta E-C and the valence band offset Delta E-V Delta E-C=E-g(SiO2)-E-g(ZnO)-Delta E-V, and taking the room-temperature band-gaps of 9.0 and 3.37 eV for SiO2 and ZnO, respectively, a type-I band-energy alignment of SiO2/ZnO interface with a conduction band offset of 4.70 +/- 0.15 eV is found. The accurate determination of energy band alignment of SiO2/ZnO is helpful for designing of SiO2/ZnO hybrid devices and is also important for understanding their carrier transport properties. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3204028]

Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy

In2O3 is a promising partner of InN to form InN/In2O3 heterosystems. The valence band offset (VBO) of wurtzite InN/cubic In2O3 heterojunction is determined by x-ray photoemission spectroscopy. The valence band of In2O3 is found to be 1.47 +/- 0.11 eV below that of InN, and a type-I heterojunction with a conduction band offset (CBO) of 0.49-0.99 eV is found. The accurate determination of the VBO and CBO is important for use of InN/In2O3 based electronic devices.

Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy

The valence band offsets of the wurtzite polar C-plane and nonpolar A-plane InN/ZnO heterojunctions are directly determined by x-ray photoelectron spectroscopy to be 1.76 +/- 0.2 eV and 2.20 +/- 0.2 eV. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 0.84 +/- 0.2 eV and 0.40 +/- 0.2 eV. The difference of valence band offsets of them mainly attributes to the spontaneous polarization effect. Our results show important face dependence for InN/ZnO heterojunctions, and the valence band offset of A-plane heterojunction is more close to the "intrinsic" valence band offset.

Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy

MgO is a promising gate dielectric and surface passivation film for GaN/AlGaN transistors, but little is known of the band offsets in the MgO/AlN system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E-v) of MgO/AlN heterostructures. A value of Delta E-v=0.22 +/- 0.08 eV was obtained. Given the experimental band gap of 7.83 eV for MgO, a type-I heterojunction with a conduction band offset of similar to 1.45 eV is found. The accurate determination of the valence and conduction band offsets is important for use of III-N alloys based electronic devices.

Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of InN/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 0.55 +/- 0.23 eV and the conduction band offset is deduced to be -2.01 +/- 0.23 eV, indicating that the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets is important for applications of InN/SiC optoelectronic devices.

Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure. (C) 2004 Elsevier B.V. All rights reserved.

Photoluminescence of low-dimensional semiconductor structures under pressure

Photoluminescence of some low-dimensional semiconductor structures has been investigated under pressure. The measured pressure coefficients of In0.55Al0.45 As/Al0.5Ga0.5As quantum dots with average diameter of 26, 52 and 62 nm are 82, 94 and 98 meV/GPa, respectively. It indicates that these quantum dots are type-I dots. On the other hand, the measured pressure coefficient for quantum dots with 7 nm in size is -17meV/GPa, indicating the type-II character. The measured pressure coefficient for Mn emission in ZnS:Mn nanoparticles is -34.6meV/GPa, in agreement with the predication of the crystal field theory. However, the DA emission is nearly independent on pressure, indicating that this emission is related to the surface defects in ZnS host. The measured pressure coefficient of Cu emission in ZnS: Cu nanoparticles is 63.2 meV/GPa. It implies that the acceptor level introduced by Cu ions has some character of shallow level. The measured pressure coefficient of Eu emission in ZnS:Eu nanoparticles is 24.1 mev/GPa, in contrast to the predication of the crystal field theory. It may be due to the strong interaction between the excited state of Eu ions and the conduction band of ZnS host.

Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy

The valence band offset (VBO) of the wurtzite InN/ZnO heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.82 +/- 0.23 eV. The conduction band offset is deduced from the known VBO value to be 1.85 -/+ 0.23 eV, which indicates a type-I band alignment for InN/ZnO heterojunction. (C) 2007 American Institute of Physics.