Analysis of basic processes inside the keyhole during deep penetration ND-YAG CW laser welding

During laser welding, the keyhole is generated by the recoil pressure induced by the evaporation processes occurring mainly on the front keyhole wall (KW). In order to characterize the evaporation process, we have measured this recoil pressure by using a plume deflection technique, where the plume generated for static conditions (i. e. with no sample displacement) is deflected by a transverse side gas jet. From the measurement of the plume deflection angle, the recoil pressure can be determined as a function of incident intensity and sample material. From these data one can estimate the pressure generated on the front KW, during laser welding. Therefore, the corresponding dynamic pressure exerted by the vapor plume expansion on the rear KW, in contact with the melt pool, can be also estimated. These pressures appear to be in close agreement with those generated by an additional side jet that has been used in previous experiments, for stabilizing the observed melt pool oscillations or fluctuations.

Part I: Binders & technologies - Basic principles

The first three reports in this series (Parts I, II and III) deals with binders and technologies used in stabilisation/ solidification (S/S) practice and research in the UK. This first part covers 'basic principles'while the second covers 'research' and the third 'applications'. The purpose of this work, which forms part of the Network STARNET on stabilisation/solidification treatment and remediation, is to identify the knowledge gaps and future research needs in this field. This paper describes the details and basic principles of available binders and technologies in the UK. The introduction in the report includes background on S/S, legislation aspects, overview of STARNET and its activities and details of commonly used binder selection criteria. The report is then divided into two main sections. The first covers binders and includes cement, blastfurnace slag, pulverised fuel ash, lime, natural and organophilic clays, bitumen, waste binders and concludes with proprietary binders. The second part details implementation processes for S/S treatment systems starting with ex-situ treatment systems, such as plant processing, direct mixing and in-drum processing and finishes with in-situ treatment processes, such as mechanical mixing and pressure mixing. © 2005 Taylor & Francis Group.

A PDE viewpoint on basic properties of coordination algorithms with symmetries

Several recent control applications consider the coordination of subsystems through local interaction. Often the interaction has a symmetry in state space, e.g. invariance with respect to a uniform translation of all subsystem values. The present paper shows that in presence of such symmetry, fundamental properties can be highlighted by viewing the distributed system as the discrete approximation of a partial differential equation. An important fact is that the symmetry on the state space differs from the popular spatial invariance property, which is not necessary for the present results. The relevance of the viewpoint is illustrated on two examples: (i) ill-conditioning of interaction matrices in coordination/consensus problems and (ii) the string instability issue. ©2009 IEEE.

Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.

Controlling the crystallographic phase purity of III-V nanowires is notoriously difficult, yet this is essential for future nanowire devices. Reported methods for controlling nanowire phase require dopant addition, or a restricted choice of nanowire diameter, and only rarely yield a pure phase. Here we demonstrate that phase-perfect nanowires, of arbitrary diameter, can be achieved simply by tailoring basic growth parameters: temperature and V/III ratio. Phase purity is achieved without sacrificing important specifications of diameter and dopant levels. Pure zinc blende nanowires, free of twin defects, were achieved using a low growth temperature coupled with a high V/III ratio. Conversely, a high growth temperature coupled with a low V/III ratio produced pure wurtzite nanowires free of stacking faults. We present a comprehensive nucleation model to explain the formation of these markedly different crystal phases under these growth conditions. Critical to achieving phase purity are changes in surface energy of the nanowire side facets, which in turn are controlled by the basic growth parameters of temperature and V/III ratio. This ability to tune crystal structure between twin-free zinc blende and stacking-fault-free wurtzite not only will enhance the performance of nanowire devices but also opens new possibilities for engineering nanowire devices, without restrictions on nanowire diameters or doping.