Metastability mechanisms in thin film transistors quantitatively resolved using post-stress relaxation of threshold voltage

A new approach is presented to resolve bias-induced metastability mechanisms in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). The post stress relaxation of threshold voltage (V(T)) was employed to quantitatively distinguish between the charge trapping process in gate dielectric and defect state creation in active layer of transistor. The kinetics of the charge de-trapping from the SiN traps is analytically modeled and a Gaussian distribution of gap states is extracted for the SiN. Indeed, the relaxation in V(T) is in good agreement with the theory underlying the kinetics of charge de-trapping from gate dielectric. For the TFTs used in this work, the charge trapping in the SiN gate dielectric is shown to be the dominant metastability mechanism even at bias stress levels as low as 10 V.

Lowering the excitation threshold of a random laser using the dynamic scattering states of an organosiloxane smectic A liquid crystal

Smectic A liquid crystals, based upon molecular structures that consist of combined siloxane and mesogenic moieties, exhibit strong multiple scattering of light with and without the presence of an electric field. This paper demonstrates that when one adds a laser dye to these compounds it is possible to observe random laser emission under optical excitation, and that the output can be varied depending upon the scattering state that is induced by the electric field. Results are presented to show that the excitation threshold of a dynamic scattering state, consisting of chaotic motion due to electro-hydrodynamic instabilities, exhibits lower lasing excitation thresholds than the scattering states that exist in the absence of an applied electric field. However, the lowest threshold is observed for a dynamic scattering state that does not have the largest scattering strength but which occurs when there is optimization of the combined light absorption and scattering properties. © 2012 American Institute of Physics.

Visual search near threshold: Some features are more equal than others.

While searching for objects, we combine information from multiple visual modalities. Classical theories of visual search assume that features are processed independently prior to an integration stage. Based on this, one would predict that features that are equally discriminable in single feature search should remain so in conjunction search. We test this hypothesis by examining whether search accuracy in feature search predicts accuracy in conjunction search. Subjects searched for objects combining color and orientation or size; eye movements were recorded. Prior to the main experiment, we matched feature discriminability, making sure that in feature search, 70% of saccades were likely to go to the correct target stimulus. In contrast to this symmetric single feature discrimination performance, the conjunction search task showed an asymmetry in feature discrimination performance: In conjunction search, a similar percentage of saccades went to the correct color as in feature search but much less often to correct orientation or size. Therefore, accuracy in feature search is a good predictor of accuracy in conjunction search for color but not for size and orientation. We propose two explanations for the presence of such asymmetries in conjunction search: the use of conjunctively tuned channels and differential crowding effects for different features.

Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold

The three-dimensional spatial distribution of Al in the high-k metal gates of metal-oxide-semiconductor field-effect-transistors is measured by atom probe tomography. Chemical distribution is correlated with the transistor voltage threshold (VTH) shift generated by the introduction of a metallic Al layer in the metal gate. After a 1050 °C annealing, it is shown that a 2-Å thick Al layer completely diffuses into oxide layers, while a positive VTH shift is measured. On the contrary, for thicker Al layers, Al precipitation in the metal gate stack is observed and the VTH shift becomes negative. © 2012 American Institute of Physics.

Parametrically excited MEMS vibration energy harvesters with design approaches to overcome the initiation threshold amplitude

Resonant-based vibration harvesters have conventionally relied upon accessing the fundamental mode of directly excited resonance to maximize the conversion efficiency of mechanical-to-electrical power transduction. This paper explores the use of parametric resonance, which unlike the former, the resonant-induced amplitude growth, is not limited by linear damping and wherein can potentially offer higher and broader nonlinear peaks. A numerical model has been constructed to demonstrate the potential improvements over the convention. Despite the promising potential, a damping-dependent initiation threshold amplitude has to be attained prior to accessing this alternative resonant phenomenon. Design approaches have been explored to passively reduce this initiation threshold. Furthermore, three representative MEMS designs were fabricated with both 25 and 10 μm thick device silicon. The devices include electrostatic cantilever-based harvesters, with and without the additional design modification to overcome initiation threshold amplitude. The optimum performance was recorded for the 25 μm thick threshold-aided MEMS prototype with device volume ∼0.147 mm3. When driven at 4.2 ms -2, this prototype demonstrated a peak power output of 10.7 nW at the fundamental mode of resonance and 156 nW at the principal parametric resonance, as well as a 23-fold decrease in initiation threshold over the purely parametric prototype. An approximate doubling of the half-power bandwidth was also observed for the parametrically excited scenario. © 2013 IOP Publishing Ltd.

Modeling sub-threshold current-voltage characteristics in thin film transistors

In this paper, we present a physically-based compact model for the sub-threshold behavior in a TFT with an amorphous semiconductor channel. Both drift and diffusion current components are considered and combined using an harmonic average. Here, the diffusion component describes the exponential current behavior due to interfacial deep states, while the drift component is associated with presence of localized deep states formed by dangling bonds broken from weak bonds in the bulk and follows a power law. The proposed model yields good agreement with measured results. © 2013 IEEE.