Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control
| Contribuinte(s) |
Li, Xiuling Li, Xiuling |
|---|---|
| Data(s) |
06/01/2010
06/01/2010
07/01/2012
06/01/2010
01/12/2009
|
| Resumo |
Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed reactor at the University of Illinois is presented. |
| Identificador | |
| Idioma(s) |
en |
| Direitos |
Copyright 2009 Kevin P. Bassett |
| Palavras-Chave | #Metal-organic chemical vapor deposition (MOCVD) #Organometallic vapor phase epitaxy (OMVPE) #Metalorganic vapour phase epitaxy (MOVPE) |
