Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices


Autoria(s): O'Dwyer, Colm; Szachowicz, Marta; Visimberga, Giuseppe; Lavayen, Vladimir; Newcomb, Simon B.; Sotomayor Torres, Clivia M.
Data(s)

01/07/2016

01/07/2016

01/02/2009

29/11/2012

Resumo

Thin layers of indium tin oxide are widely used as transparent coatings and electrodes in solar energy cells, flat-panel displays, antireflection coatings, radiation protection and lithium-ion battery materials, because they have the characteristics of low resistivity, strong absorption at ultraviolet wavelengths, high transmission in the visible, high reflectivity in the far-infrared and strong attenuation in the microwave region. However, there is often a trade-off between electrical conductivity and transparency at visible wavelengths for indium tin oxide and other transparent conducting oxides. Here, we report the growth of layers of indium tin oxide nanowires that show optimum electronic and photonic properties and demonstrate their use as fully transparent top contacts in the visible to near-infrared region for light-emitting devices.

Formato

application/pdf

Identificador

O'Dwyer, C., Szachowicz, M., Visimberga, G., Lavayen, V., Newcomb, S. B. and Sotomayor Torres, C. M. (2009) 'Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices', Nature Nanotechnology, 4, pp. 239-244. http://dx.doi.org/10.1038/nnano.2008.418

4

239

244

1748-3387

http://hdl.handle.net/10468/2821

10.1038/nnano.2008.418

Nature Nanotechnology

Idioma(s)

en

Publicador

Nature Publishing Group

Direitos

© 2009 Macmillan Publishers Limited. All rights reserved.

Palavras-Chave #Nanotechnology #Nanowires #Indium tin oxide #Electron microscopy #Light emitting diode
Tipo

Article (peer-reviewed)