Receptores homodinos a 300 GHz basados en tecnología CMOS


Autoria(s): González Posadas, Vicente; Segovia Vargas, Daniel; Montero de Paz, Javier; Portillo López-Mingo, Álvaro; Crooks, Jamie; Huggard, Peter G.; García Muñoz, Enrique; Alderman, B.; Turchetta, R.
Data(s)

2013

Resumo

Using CMOS transistors for terahertz detection is currently a disruptive technology that offers the direct integration of a terahertz detector with video preamplifiers. The detectors are based on the resistive mixer concept and its performance mainly depends on the following parameters: type of antenna, electrical parameters (gate to drain capacitor and channel length of the CMOS device) and foundry. Two different 300 GHz detectors are discussed: a single transistor detector with a broadband antenna and a differential pair driven by a resonant patch antenna.

Formato

application/pdf

Identificador

http://oa.upm.es/29604/

Idioma(s)

spa

Publicador

E.U.I.T. Telecomunicación (UPM)

Relação

http://oa.upm.es/29604/1/INVE_MEM_2013_170971.pdf

http://www.ursi2013.org/

info:eu-repo/semantics/altIdentifier/doi/null

Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/openAccess

Fonte

XXVIII Simposium Nacional de la Unión Científica Internacional de Radio URSI 2013 | XXVIII Simposium Nacional de la Unión Científica Internacional de Radio. URSI 2013. Santiago de Compostela, España, septiembre 2013 | 11/09/2013 - 13/09/2013 | Santiago de Compostela, España

Palavras-Chave #Telecomunicaciones #Electrónica
Tipo

info:eu-repo/semantics/conferenceObject

Ponencia en Congreso o Jornada

PeerReviewed