Influence of 60-MeV Proton-Irradiation on Standard and Strained n- and p-Channel MuGFETs
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
---|---|
Data(s) |
07/11/2013
07/11/2013
2012
|
Resumo |
In this work the proton irradiation influence on Multiple Gate MOSFETs (MuGFETs) performance is investigated. This analysis was performed through basic and analog parameters considering four different splits (unstrained, uniaxial, biaxial, uniaxial+biaxial). Although the influence of radiation is more pronounced for p-channel devices, in pMuGFETs devices, the radiation promotes a higher immunity to the back interface conduction resulting in the analog performance improvement. On the other hand, the proton irradiation results in a degradation of the post-irradiated n-channel transistors behavior. The unit gain frequency showed to be strongly dependent on stress efficiency and the radiation results in an increase of the unit gain frequency for splits with high stress effectiveness for both cases p- and nMuGFETs. |
Identificador |
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, PISCATAWAY, v. 59, n. 4, supl. 4, Part 1, pp. 707-713, AUG, 2012 0018-9499 http://www.producao.usp.br/handle/BDPI/43157 10.1109/TNS.2012.2187070 |
Idioma(s) |
eng |
Publicador |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC PISCATAWAY |
Relação |
IEEE TRANSACTIONS ON NUCLEAR SCIENCE |
Direitos |
restrictedAccess Copyright IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
Palavras-Chave | #ANALOG PERFORMANCE #MULTIPLE-GATE #PROTON-IRRADIATION EFFECTS #SOI #STRAIN TECHNOLOGIES #DEPENDENCE #DEVICES #ENGINEERING, ELECTRICAL & ELECTRONIC #NUCLEAR SCIENCE & TECHNOLOGY |
Tipo |
article Proceedings Paper publishedVersion |