Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate
Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
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Data(s) |
20/05/2014
20/05/2014
01/04/1999
|
Resumo |
Cubic GaN layers are grown by molecular beam epitaxy on (001) GaAs substrates. Optical micrographs of the GaN epilayers intentionally grown at Ga excess reveal the existence of surface irregularities such as bright rectangular structures, dark dots surrounded by rectangles and dark dots without rectangles. Micro-Raman spectroscopy is used to study the structural properties of these inclusions and of the epilayers in greater detail. We conclude that the observed irregularities are the result of a melting process due to the existence of a liquid Ga phase on the growing surface. |
Formato |
318-322 |
Identificador |
http://dx.doi.org/10.1088/0268-1242/14/4/005 Semiconductor Science and Technology. Bristol: Iop Publishing Ltd, v. 14, n. 4, p. 318-322, 1999. 0268-1242 http://hdl.handle.net/11449/35189 10.1088/0268-1242/14/4/005 WOS:000079818500005 |
Idioma(s) |
eng |
Publicador |
Iop Publishing Ltd |
Relação |
Semiconductor Science and Technology |
Direitos |
closedAccess |
Tipo |
info:eu-repo/semantics/article |