Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate


Autoria(s): Tabata, A.; Lima, A. P.; Leite, JR; Lemos, V; Schikora, D.; Schottker, A.; Kohler, U.; As, D. J.; Lischka, K.
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

20/05/2014

20/05/2014

01/04/1999

Resumo

Cubic GaN layers are grown by molecular beam epitaxy on (001) GaAs substrates. Optical micrographs of the GaN epilayers intentionally grown at Ga excess reveal the existence of surface irregularities such as bright rectangular structures, dark dots surrounded by rectangles and dark dots without rectangles. Micro-Raman spectroscopy is used to study the structural properties of these inclusions and of the epilayers in greater detail. We conclude that the observed irregularities are the result of a melting process due to the existence of a liquid Ga phase on the growing surface.

Formato

318-322

Identificador

http://dx.doi.org/10.1088/0268-1242/14/4/005

Semiconductor Science and Technology. Bristol: Iop Publishing Ltd, v. 14, n. 4, p. 318-322, 1999.

0268-1242

http://hdl.handle.net/11449/35189

10.1088/0268-1242/14/4/005

WOS:000079818500005

Idioma(s)

eng

Publicador

Iop Publishing Ltd

Relação

Semiconductor Science and Technology

Direitos

closedAccess

Tipo

info:eu-repo/semantics/article