Numerical simulation of magnetic-field-enhanced plasma immersion ion implantation in cylindrical geometry


Autoria(s): Kostov, Konstantin G.; Barroso, Joaquim J.
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

20/05/2014

20/05/2014

01/08/2006

Resumo

Recent studies have demonstrated that the sheath dynamics in plasma immersion ion implantation (PIII) is significantly affected by an external magnetic field. In this paper, a two-dimensional computer simulation of a magnetic-field-enhanced PHI system is described. Negative bias voltage is applied to a cylindrical target located on the axis of a grounded vacuum chamber filled with uniform molecular nitrogen plasma. A static magnetic field is created by a small coil installed inside the target holder. The vacuum chamber is filled with background nitrogen gas to form a plasma in which collisions of electrons and neutrals are simulated by the Monte Carlo algorithm. It is found that a high-density plasma is formed around the target due to the intense background gas ionization by the magnetized electrons drifting in the crossed E x B fields. The effect of the magnetic field intensity, the target bias, and the gas pressure on the sheath dynamics and implantation current of the PHI system is investigated.

Formato

1127-1135

Identificador

http://dx.doi.org/10.1109/TPS.2006.878390

IEEE Transactions on Plasma Science. Piscataway: IEEE-Inst Electrical Electronics Engineers Inc., v. 34, n. 4, p. 1127-1135, 2006.

0093-3813

http://hdl.handle.net/11449/32257

10.1109/TPS.2006.878390

WOS:000239975900015

Idioma(s)

eng

Publicador

Institute of Electrical and Electronics Engineers (IEEE)

Relação

IEEE Transactions on Plasma Science

Direitos

closedAccess

Palavras-Chave #ion implantation #magnetic field effects #plasma materials processing applications #plasma sheaths
Tipo

info:eu-repo/semantics/article