Thermoelectric properties of BiOCu1-xMxSe (M = Cd and Zn)


Autoria(s): Luu, Son D. N.; Vaqueiro, Paz
Data(s)

20/12/2013

Resumo

Doping of BiOCuSe at the copper site with divalent cadmium and zinc cations has been investigated. Analysis of the powder X-ray diffraction data indicates that the ZrCuSiAs structure of BiOCuSe is retained up to substitution levels of 10 and 5 at.% for Cd2+ and Zn2+, respectively. Substitution of monovalent Cu+ with divalent Cd2+ or Zn2+ leads to an increase in the magnitude of the electrical resistivity and the Seebeck coefficient. All synthesized materials behave as p-type semiconductors.

Formato

text

Identificador

http://centaur.reading.ac.uk/36420/2/manuscript.pdf

Luu, S. D. N. <http://centaur.reading.ac.uk/view/creators/22826575.html> and Vaqueiro, P. <http://centaur.reading.ac.uk/view/creators/90005590.html> (2013) Thermoelectric properties of BiOCu1-xMxSe (M = Cd and Zn). Semiconductor Science and Technology, 29 (6). 064002. ISSN 0268-1242 doi: 10.1088/0268-1242/29/6/064002 <http://dx.doi.org/10.1088/0268-1242/29/6/064002>

Idioma(s)

en

Publicador

IOP

Relação

http://centaur.reading.ac.uk/36420/

creatorInternal Luu, Son D. N.

creatorInternal Vaqueiro, Paz

10.1088/0268-1242/29/6/064002

Tipo

Article

PeerReviewed