Ferroelectricity in Si-doped HfO2 Revealed: A Binary Lead-free Ferroelectric


Autoria(s): Martin, Dominik; Müller, Johannes; Schenk, Tony; Arruda, Thomas M.; Kumar, Amit; Strelcov, Evgheni; Yurchuk, Ekaterina; Müller, Stefan; Pohl, Darius; Schröder, Uwe; Kalinin, Sergei V.; Mikolajick, Thomas
Data(s)

23/12/2014

Resumo

Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior. <br/>

Identificador

http://pure.qub.ac.uk/portal/en/publications/ferroelectricity-in-sidoped-hfo2-revealed-a-binary-leadfree-ferroelectric(41cc9184-b5a2-4fbe-8e58-da480f1f2473).html

http://dx.doi.org/10.1002/adma.201403115

Idioma(s)

eng

Direitos

info:eu-repo/semantics/restrictedAccess

Fonte

Martin , D , Müller , J , Schenk , T , Arruda , T M , Kumar , A , Strelcov , E , Yurchuk , E , Müller , S , Pohl , D , Schröder , U , Kalinin , S V & Mikolajick , T 2014 , ' Ferroelectricity in Si-doped HfO2 Revealed: A Binary Lead-free Ferroelectric ' Advanced Materials , vol 26 , no. 48 , pp. 8198-8202 . DOI: 10.1002/adma.201403115

Palavras-Chave #HfO2 #Si-doping #ferroelectricity #antiferroelectricity #electromechanical response mechanisms #piezoresponse force microscopy (PFM)
Tipo

article