Measurement of the full stress tensor in a crystal using photoluminescence from point defects: The example of nitrogen vacancy centers in diamond
Data(s) |
02/09/2013
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Resumo |
We introduce a method for measuring the full stress tensor in a crystal utilising the properties of individual point defects. By measuring the perturbation to the electronic states of three point defects with C 3 v symmetry in a cubic crystal, sufficient information is obtained to construct all six independent components of the symmetric stress tensor. We demonstrate the method using photoluminescence from nitrogen-vacancy colour centers in diamond. The method breaks the inverse relationship between spatial resolution and sensitivity that is inherent to existing bulk strain measurement techniques, and thus, offers a route to nanoscale strain mapping in diamond and other materials in which individual point defects can be interrogated. |
Formato |
application/pdf |
Identificador |
http://dx.doi.org/10.1063/1.4819834 http://www.scopus.com/inward/record.url?eid=2-s2.0-84884216892&partnerID=8YFLogxK |
Idioma(s) |
eng |
Direitos |
info:eu-repo/semantics/openAccess |
Fonte |
Grazioso , F , Patton , B R , Delaney , P , Markham , M L , Twitchen , D J & Smith , J M 2013 , ' Measurement of the full stress tensor in a crystal using photoluminescence from point defects: The example of nitrogen vacancy centers in diamond ' Applied Physics Letters , vol 103 , no. 10 , 101905 . DOI: 10.1063/1.4819834 |
Tipo |
article |