Correlation of optical emission and ion flux with GaN etch rate in inductively coupled Ar/Cl-2 plasma etching

Autoria(s): Rizvi, S.A.; Maguire, P.D.; Mahony, C.M.O.; Okpalugo, O.A.; Corr, C.S.; Graham, Bill; Morley, S.M.
Data(s)

01/07/2002
Identificador

http://pure.qub.ac.uk/portal/en/publications/correlation-of-optical-emission-and-ion-flux-with-gan-etch-rate-in-inductively-coupled-arcl2-plasma-etching(3ec1fb3b-051e-4299-b1e7-51200d77ee03).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Rizvi , S A , Maguire , P D , Mahony , C M O , Okpalugo , O A , Corr , C S , Graham , B & Morley , S M 2002 , ' Correlation of optical emission and ion flux with GaN etch rate in inductively coupled Ar/Cl-2 plasma etching ' Paper presented at International Workshop on Nitride Semiconductors (IWN 2002) , Aachen , Germany , 01/07/2002 - 01/07/2002 , pp. 112-115 .
Tipo

conferenceObject
Acesso ao item digital