Hydrogen and helium implantation in germanium for semiconductor layer transfer applications

Autoria(s): Hurley, Richard; Rainey, Paul; Low, Y.W.; Baine, Paul; McNeill, David; Mitchell, Neil; Gamble, Harold; Armstrong, Mervyn
Data(s)

01/06/2010
Identificador

http://pure.qub.ac.uk/portal/en/publications/hydrogen-and-helium-implantation-in-germanium-for-semiconductor-layer-transfer-applications(b831d8db-66c8-4bdf-bc3c-00d196c8db8f).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Hurley , R , Rainey , P , Low , Y W , Baine , P , McNeill , D , Mitchell , N , Gamble , H & Armstrong , M 2010 , ' Hydrogen and helium implantation in germanium for semiconductor layer transfer applications ' Paper presented at VIII-th INTERNATIONAL CONFERENCE on ION IMPLANTATION AND OTHER APPLICATIONS OF IONS AND ELECTRONS , Kazimierz Dolny , Poland , 01/06/2010 - 01/06/2010 , pp. 56-56 .
Tipo

conferenceObject
Acesso ao item digital