Equivalent Circuit Model for Thermal Resistance of Deep Trench Isolated Bipolar Transistors

Autoria(s): Rashmi, R; Armstrong, Alastair; Harrington, Catriona; Bousquet, A.; Nigrin, S.
Data(s)

01/10/2010
Identificador

http://pure.qub.ac.uk/portal/en/publications/equivalent-circuit-model-for-thermal-resistance-of-deep-trench-isolated-bipolar-transistors(01431723-8a80-4dc5-a32b-f76667edd18c).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Rashmi , R , Armstrong , A , Harrington , C , Bousquet , A & Nigrin , S 2010 , ' Equivalent Circuit Model for Thermal Resistance of Deep Trench Isolated Bipolar Transistors ' Paper presented at Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) , Austin, Tx , United States , 01/10/2010 - 01/10/2010 , pp. 261-264 .
Tipo

conferenceObject
Acesso ao item digital