Low Temperature Plasma enhanced Chemical Vapour Deposition of Tungsten and Tungsten Nitride.

Autoria(s): Armstrong, Mervyn; Bain, Michael; Gamble, Harold
Data(s)

01/06/2002
Identificador

http://pure.qub.ac.uk/portal/en/publications/low-temperature-plasma-enhanced-chemical-vapour-deposition-of-tungsten-and-tungsten-nitride(fda8a124-c7f5-404b-8c23-b61828779fc9).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Armstrong , M , Bain , M & Gamble , H 2002 , ' Low Temperature Plasma enhanced Chemical Vapour Deposition of Tungsten and Tungsten Nitride. ' Paper presented at 4th Intl Conf on Materials for Microelectronics , Espoo , Finland , 01/06/2002 - 01/06/2002 , pp. 0-0 .
Tipo

conferenceObject
Acesso ao item digital