Analysis and Synthesis of pHEMT Class-E Amplifiers with Shunt Inductor including ON-State Active-Device Resistance Effects
Data(s) |
01/07/2006
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Resumo |
<p>In this theoretical paper, the analysis of the effect that ON-state active-device resistance has on the performance of a Class-E tuned power amplifier using a shunt inductor topology is presented. The work is focused on the relatively unexplored area of design facilitation of Class-E tuned amplifiers where intrinsically low-output-capacitance monolithic microwave integrated circuit switching devices such as pseudomorphic high electron mobility transistors are used. In the paper, the switching voltage and current waveforms in the presence of ON-resistance are analyzed in order to provide insight into circuit properties such as RF output power, drain efficiency, and power-output capability. For a given amplifier specification, a design procedure is illustrated whereby it is possible to compute optimal circuit component values which account for prescribed switch resistance loss. Furthermore, insight into how ON-resistance affects transistor selection in terms of peak switch voltage and current requirements is described. Finally, a design example is given in order to validate the theoretical analysis against numerical simulation.</p> |
Formato |
application/pdf |
Identificador |
http://dx.doi.org/10.1109/TCSI.2006.876416 http://pure.qub.ac.uk/ws/files/9995433/Analysis_and_Synthesis_of_pHEMT_Class_E.pdf |
Idioma(s) |
eng |
Direitos |
info:eu-repo/semantics/closedAccess |
Fonte |
Thian , M & Fusco , V 2006 , ' Analysis and Synthesis of pHEMT Class-E Amplifiers with Shunt Inductor including ON-State Active-Device Resistance Effects ' IEEE Transactions on Circuits and Systems I: Regular Papers , vol 53 , no. 7 , pp. 1556-1564 . DOI: 10.1109/TCSI.2006.876416 |
Tipo |
article |