Experimental study of quantum dot and dash lasers


Autoria(s): Heck, Susannah C.
Contribuinte(s)

Osborne, Simon

O'Reilly, Eoin P.

Science Foundation Ireland

European Commission

Data(s)

09/04/2013

09/04/2013

2009

2009

Resumo

Quantum dashes are elongated quantum dots. Polarized edge-photovoltage and spontaneous emission spectroscopy are used to study the anisotropy of optical properties in 1.5μm InGaAsP and AlGaInAs-based quantum dash lasers. Strain, which causes TM-polarized transitions to be suppressed at the band edge, coupled with carrier confinement and dash shape leads to an enhancement of the optical properties for light polarized along the dash long axis, in excellent agreement with theoretical results. An analysis of the integrated facet and spontaneous emission rate with total current and temperature reveals that, in both undoped and p-doped InGaAsP-based quantum dash lasers at room temperature, the threshold current and its temperature dependence remain dominated by Auger recombination. We also identify two processes which can limit the output power and propose that the effects of the dopant in p-doped InGaAsP-based lasers dominate at low temperature but decrease with increasing temperature. A high threshold current density in undoped AlGaInAs-based quantum dash laser samples studied, which degrade rapidly at low temperature, is not due to intrinsic carrier recombination processes. 1.3μm GaAs-based quantum dots lasers have been widely studied, but there remains issues as to the nature of the electronic structure. Polarized edge-photovoltage spectroscopy is used to investigate the energy distribution and nature of the energy states in InAs/GaAs quantum dot material. A non-negligible TM-polarized transition, which is often neglected in calculations and analyses, is measured close to the main TE-polarized ground state transition. Theory is in very good agreement with the experimental results and indicates that the measured low-energy TM-polarized transition is due to the strong spatial overlap between the ground state electron and the light-hole component of a low-lying excited hole state. Further calculations suggest that the TM-polarized transition reduces at the band edge as the quantum dot aspect ratio decreases.

European Commission (FP6-NMP 017140 ZODIAC (Zero Order Dimension based Industrial components Applied to teleCommunications) )

Accepted Version

Not peer reviewed

Formato

application/pdf

Identificador

Heck, S. C. 2009. Experimental study of quantum dot and dash lasers. PhD Thesis, University College Cork.

http://hdl.handle.net/10468/1036

Idioma(s)

en

en

Publicador

University College Cork

Relação

http://library.ucc.ie/record=b1894212

Direitos

© 2009, Susannah C. Heck

http://creativecommons.org/licenses/by-nc-nd/3.0/

Palavras-Chave #Diode Laser #Quantum dashes #Spontaneous emission spectroscopy #TM-polarized transitions #InGaAsP #AlGaInAs #Auger recombination #GaAs #Polarized edge-photovoltage spectroscopy #TE-polarized ground state transition #Quantum dot #Quantum dots #Lasers
Tipo

Doctoral thesis

Doctoral

PhD (Science)