The effects of the annealing time on helium implantation in Si
Data(s) |
2010
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Resumo |
The modifications induced in silicon samples by helium implantation before and after isothermal annealing at 673 K have been investigated. The surface morphology has been detected by atomic force microscopy. A hillock structure is observed on the sample surface before and after annealing for 5-10 min. Surface blister formation is observed with an increasing annealing time. The variation of crystal damage with annealing time has been investigated by Rutherford backscattering/channeling. The intensity of the damage peak first increases with annealing time, reaches maximum at an annealing time of 60 min and then decreases. Helium-induced bubbles and residual defects have been observed by transmission electron microscopy, which shows that dislocations are close to the bubbles. (C) 2010 Elsevier B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Li, BS; Zhang, CH; Zhang, HH; Yang, YT; Zhou, LH; Zhang, LQ; Zhang, Y.The effects of the annealing time on helium implantation in Si,NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2010,268(21):3390-3394 |
Palavras-Chave | #TRANSIENT ENHANCED DIFFUSION #SINGLE-CRYSTAL SILICON #BUBBLE PRECURSORS #HE IMPLANTATION #HYDROGEN #VOIDS #DEFECTS #DAMAGE #BORON |
Tipo |
期刊论文 |