The effects of the annealing time on helium implantation in Si


Autoria(s): Li, BS; Zhang, CH; Zhang, HH; Yang, YT; Zhou, LH; Zhang, LQ; Zhang, Y
Data(s)

2010

Resumo

The modifications induced in silicon samples by helium implantation before and after isothermal annealing at 673 K have been investigated. The surface morphology has been detected by atomic force microscopy. A hillock structure is observed on the sample surface before and after annealing for 5-10 min. Surface blister formation is observed with an increasing annealing time. The variation of crystal damage with annealing time has been investigated by Rutherford backscattering/channeling. The intensity of the damage peak first increases with annealing time, reaches maximum at an annealing time of 60 min and then decreases. Helium-induced bubbles and residual defects have been observed by transmission electron microscopy, which shows that dislocations are close to the bubbles. (C) 2010 Elsevier B.V. All rights reserved.

Identificador

http://ir.impcas.ac.cn/handle/113462/7759

http://www.irgrid.ac.cn/handle/1471x/132956

Idioma(s)

英语

Fonte

Li, BS; Zhang, CH; Zhang, HH; Yang, YT; Zhou, LH; Zhang, LQ; Zhang, Y.The effects of the annealing time on helium implantation in Si,NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2010,268(21):3390-3394

Palavras-Chave #TRANSIENT ENHANCED DIFFUSION #SINGLE-CRYSTAL SILICON #BUBBLE PRECURSORS #HE IMPLANTATION #HYDROGEN #VOIDS #DEFECTS #DAMAGE #BORON
Tipo

期刊论文