Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis

A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and alpha-Si layers were deposited by magnetron sputtering respectively and annealed at 480A degrees C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between gamma-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of gamma-Al2O3, which was formed at the early stage of annealing.

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This work was supported by the National Basic Research Program of China ("973" Project) (Grant No. 2010CB933803), the National Natural Science Foundation of China (Grant No. 2102042), and the Visiting Scholar Foundation of State Key Lab of Silicon Materials, Zhejiang University (Grant No. SKL 2009-12).

国内

This work was supported by the National Basic Research Program of China ("973" Project) (Grant No. 2010CB933803), the National Natural Science Foundation of China (Grant No. 2102042), and the Visiting Scholar Foundation of State Key Lab of Silicon Materials, Zhejiang University (Grant No. SKL 2009-12).